SI7862ADP-T1-GE3

Vishay Siliconix SI7862ADP-T1-GE3

Part Number:
SI7862ADP-T1-GE3
Manufacturer:
Vishay Siliconix
Ventron No:
3554369-SI7862ADP-T1-GE3
Description:
MOSFET N-CH 16V 18A PPAK SO-8
ECAD Model:
Datasheet:
SI7862ADP-T1-GE3

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Specifications
Vishay Siliconix SI7862ADP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7862ADP-T1-GE3.
  • Factory Lead Time
    14 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    PowerPAK® SO-8
  • Weight
    506.605978mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2016
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Powers
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    C BEND
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    8
  • JESD-30 Code
    R-XDSO-C5
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    1.9W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Turn On Delay Time
    42 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    3m Ω @ 29A, 4.5V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    7340pF @ 8V
  • Current - Continuous Drain (Id) @ 25°C
    18A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    80nC @ 4.5V
  • Rise Time
    38ns
  • Drive Voltage (Max Rds On,Min Rds On)
    2.5V 4.5V
  • Vgs (Max)
    ±8V
  • Fall Time (Typ)
    50 ns
  • Turn-Off Delay Time
    120 ns
  • Continuous Drain Current (ID)
    18A
  • Gate to Source Voltage (Vgs)
    8V
  • Drain-source On Resistance-Max
    0.003Ohm
  • Drain to Source Breakdown Voltage
    16V
  • Pulsed Drain Current-Max (IDM)
    60A
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
SI7862ADP-T1-GE3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 7340pF @ 8V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 18A amps.In this device, the drain-source breakdown voltage is 16V and VGS=16V, so the drain-source breakdown voltage is 16V in this case.It is [120 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 60A.A turn-on delay time of 42 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.A device like this reduces its overall power consumption when it uses drive voltage (2.5V 4.5V).

SI7862ADP-T1-GE3 Features
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 16V voltage
the turn-off delay time is 120 ns
based on its rated peak drain current 60A.


SI7862ADP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7862ADP-T1-GE3 applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
SI7862ADP-T1-GE3 More Descriptions
Trans MOSFET N-CH 16V 18A 8-Pin PowerPAK SO T/R
N-CHANNEL 16-V (D-S) MOSFET
MOSFET 16V 29A 5.4W 3.0mohm @ 4.5V
OEMs, CMs ONLY (NO BROKERS)
Product Comparison
The three parts on the right have similar specifications to SI7862ADP-T1-GE3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Radiation Hardening
    RoHS Status
    Number of Pins
    Termination
    Resistance
    Additional Feature
    Power Dissipation
    Threshold Voltage
    Dual Supply Voltage
    Avalanche Energy Rating (Eas)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Lead Free
    Drain to Source Voltage (Vdss)
    DS Breakdown Voltage-Min
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Drain to Source Resistance
    Rds On Max
    View Compare
  • SI7862ADP-T1-GE3
    SI7862ADP-T1-GE3
    14 Weeks
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    506.605978mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Matte Tin (Sn)
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    40
    8
    R-XDSO-C5
    1
    1
    1.9W Ta
    Single
    ENHANCEMENT MODE
    DRAIN
    42 ns
    N-Channel
    SWITCHING
    3m Ω @ 29A, 4.5V
    2V @ 250μA
    7340pF @ 8V
    18A Ta
    80nC @ 4.5V
    38ns
    2.5V 4.5V
    ±8V
    50 ns
    120 ns
    18A
    8V
    0.003Ohm
    16V
    60A
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI7882DP-T1-E3
    -
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    506.605978mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2009
    e3
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    Matte Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    40
    8
    R-PDSO-C5
    1
    1
    1.9W Ta
    Single
    ENHANCEMENT MODE
    DRAIN
    28 ns
    N-Channel
    SWITCHING
    5.5m Ω @ 17A, 4.5V
    1.4V @ 250μA
    -
    13A Ta
    30nC @ 4.5V
    32ns
    2.5V 4.5V
    ±8V
    32 ns
    82 ns
    13A
    8V
    -
    -
    50A
    No
    ROHS3 Compliant
    8
    SMD/SMT
    5.5mOhm
    FAST SWITCHING
    5W
    1.4V
    12V
    7.2 mJ
    1.4 V
    1.04mm
    4.9mm
    5.89mm
    No SVHC
    Lead Free
    -
    -
    -
    -
    -
    -
    -
  • SI7840BDP-T1-GE3
    15 Weeks
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    506.605978mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2009
    e3
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    PURE MATTE TIN
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    30
    -
    R-PDSO-C5
    1
    1
    1.8W Ta
    Single
    ENHANCEMENT MODE
    DRAIN
    17 ns
    N-Channel
    SWITCHING
    8.5m Ω @ 16.5A, 10V
    3V @ 250μA
    -
    11A Ta
    21nC @ 4.5V
    14ns
    4.5V 10V
    ±20V
    14 ns
    39 ns
    11A
    20V
    0.0085Ohm
    -
    50A
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    20 mJ
    -
    -
    -
    -
    -
    -
    30V
    30V
    -
    -
    -
    -
    -
  • SI7804DN-T1-E3
    14 Weeks
    Surface Mount
    Surface Mount
    PowerPAK® 1212-8
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2017
    -
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    1
    1.5W Ta
    Single
    -
    -
    8 ns
    N-Channel
    -
    18.5mOhm @ 10A, 10V
    1.8V @ 250μA
    -
    6.5A Ta
    13nC @ 5V
    12ns
    4.5V 10V
    ±20V
    12 ns
    32 ns
    10A
    20V
    -
    -
    -
    No
    ROHS3 Compliant
    8
    -
    18.5mOhm
    -
    -
    -
    -
    -
    -
    1.04mm
    3.05mm
    3.05mm
    -
    Lead Free
    30V
    -
    PowerPAK® 1212-8
    150°C
    -55°C
    18.5mOhm
    18.5 mΩ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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