Vishay Siliconix SI7862ADP-T1-GE3
- Part Number:
- SI7862ADP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3554369-SI7862ADP-T1-GE3
- Description:
- MOSFET N-CH 16V 18A PPAK SO-8
- Datasheet:
- SI7862ADP-T1-GE3
Vishay Siliconix SI7862ADP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7862ADP-T1-GE3.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CasePowerPAK® SO-8
- Weight506.605978mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2016
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Powers
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormC BEND
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count8
- JESD-30 CodeR-XDSO-C5
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1.9W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Turn On Delay Time42 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs3m Ω @ 29A, 4.5V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds7340pF @ 8V
- Current - Continuous Drain (Id) @ 25°C18A Ta
- Gate Charge (Qg) (Max) @ Vgs80nC @ 4.5V
- Rise Time38ns
- Drive Voltage (Max Rds On,Min Rds On)2.5V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)50 ns
- Turn-Off Delay Time120 ns
- Continuous Drain Current (ID)18A
- Gate to Source Voltage (Vgs)8V
- Drain-source On Resistance-Max0.003Ohm
- Drain to Source Breakdown Voltage16V
- Pulsed Drain Current-Max (IDM)60A
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
SI7862ADP-T1-GE3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 7340pF @ 8V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 18A amps.In this device, the drain-source breakdown voltage is 16V and VGS=16V, so the drain-source breakdown voltage is 16V in this case.It is [120 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 60A.A turn-on delay time of 42 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.A device like this reduces its overall power consumption when it uses drive voltage (2.5V 4.5V).
SI7862ADP-T1-GE3 Features
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 16V voltage
the turn-off delay time is 120 ns
based on its rated peak drain current 60A.
SI7862ADP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7862ADP-T1-GE3 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 7340pF @ 8V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 18A amps.In this device, the drain-source breakdown voltage is 16V and VGS=16V, so the drain-source breakdown voltage is 16V in this case.It is [120 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 60A.A turn-on delay time of 42 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.A device like this reduces its overall power consumption when it uses drive voltage (2.5V 4.5V).
SI7862ADP-T1-GE3 Features
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 16V voltage
the turn-off delay time is 120 ns
based on its rated peak drain current 60A.
SI7862ADP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7862ADP-T1-GE3 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
SI7862ADP-T1-GE3 More Descriptions
Trans MOSFET N-CH 16V 18A 8-Pin PowerPAK SO T/R
N-CHANNEL 16-V (D-S) MOSFET
MOSFET 16V 29A 5.4W 3.0mohm @ 4.5V
OEMs, CMs ONLY (NO BROKERS)
N-CHANNEL 16-V (D-S) MOSFET
MOSFET 16V 29A 5.4W 3.0mohm @ 4.5V
OEMs, CMs ONLY (NO BROKERS)
The three parts on the right have similar specifications to SI7862ADP-T1-GE3.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModeCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Radiation HardeningRoHS StatusNumber of PinsTerminationResistanceAdditional FeaturePower DissipationThreshold VoltageDual Supply VoltageAvalanche Energy Rating (Eas)Nominal VgsHeightLengthWidthREACH SVHCLead FreeDrain to Source Voltage (Vdss)DS Breakdown Voltage-MinSupplier Device PackageMax Operating TemperatureMin Operating TemperatureDrain to Source ResistanceRds On MaxView Compare
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SI7862ADP-T1-GE314 WeeksSurface MountSurface MountPowerPAK® SO-8506.605978mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2016e3yesActive1 (Unlimited)5EAR99Matte Tin (Sn)FET General Purpose PowersMOSFET (Metal Oxide)DUALC BEND260408R-XDSO-C5111.9W TaSingleENHANCEMENT MODEDRAIN42 nsN-ChannelSWITCHING3m Ω @ 29A, 4.5V2V @ 250μA7340pF @ 8V18A Ta80nC @ 4.5V38ns2.5V 4.5V±8V50 ns120 ns18A8V0.003Ohm16V60ANoROHS3 Compliant----------------------
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-Surface MountSurface MountPowerPAK® SO-8506.605978mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2009e3yesObsolete1 (Unlimited)5EAR99Matte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALC BEND260408R-PDSO-C5111.9W TaSingleENHANCEMENT MODEDRAIN28 nsN-ChannelSWITCHING5.5m Ω @ 17A, 4.5V1.4V @ 250μA-13A Ta30nC @ 4.5V32ns2.5V 4.5V±8V32 ns82 ns13A8V--50ANoROHS3 Compliant8SMD/SMT5.5mOhmFAST SWITCHING5W1.4V12V7.2 mJ1.4 V1.04mm4.9mm5.89mmNo SVHCLead Free-------
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15 WeeksSurface MountSurface MountPowerPAK® SO-8506.605978mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2009e3yesObsolete1 (Unlimited)5EAR99PURE MATTE TINFET General Purpose PowersMOSFET (Metal Oxide)DUALC BEND26030-R-PDSO-C5111.8W TaSingleENHANCEMENT MODEDRAIN17 nsN-ChannelSWITCHING8.5m Ω @ 16.5A, 10V3V @ 250μA-11A Ta21nC @ 4.5V14ns4.5V 10V±20V14 ns39 ns11A20V0.0085Ohm-50ANoROHS3 Compliant-------20 mJ------30V30V-----
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14 WeeksSurface MountSurface MountPowerPAK® 1212-8---55°C~150°C TJTape & Reel (TR)TrenchFET®2017--Active1 (Unlimited)----MOSFET (Metal Oxide)-------11.5W TaSingle--8 nsN-Channel-18.5mOhm @ 10A, 10V1.8V @ 250μA-6.5A Ta13nC @ 5V12ns4.5V 10V±20V12 ns32 ns10A20V---NoROHS3 Compliant8-18.5mOhm------1.04mm3.05mm3.05mm-Lead Free30V-PowerPAK® 1212-8150°C-55°C18.5mOhm18.5 mΩ
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