Vishay Siliconix SI7110DN-T1-GE3

SI7110DN-T1-GE3 Overview
Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 21.1A.When VGS=20V, and ID flows to VDS at 20VVDS, the drain-source breakdown voltage is 20V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 36 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 60A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 12 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 2.5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

SI7110DN-T1-GE3 Features
a continuous drain current (ID) of 21.1A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 36 ns
based on its rated peak drain current 60A.
a threshold voltage of 2.5V


SI7110DN-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7110DN-T1-GE3 applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,