ON Semiconductor NTD5865NLT4G

NTD5865NLT4G Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 36 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1400pF @ 25V.This device has a continuous drain current (ID) of [46A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 26 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 8.4 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 1V.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

NTD5865NLT4G Features
the avalanche energy rating (Eas) is 36 mJ
a continuous drain current (ID) of 46A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 26 ns
a threshold voltage of 1V


NTD5865NLT4G Applications
There are a lot of ON Semiconductor
NTD5865NLT4G applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit