ON Semiconductor NTD5862NT4G

Name: NTD5862NT4G
Brand: ON Semiconductor
SKU: 2479598-NTD5862NT4G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NTD5862NT4G

Manufacturer:: ON Semiconductor

Ventron No:: 2479598-NTD5862NT4G

Description:: MOSFET N-CH 60V 98A DPAK

ECAD Model:

Datasheet:: NTD5862NT4G

Specifications

ON Semiconductor NTD5862NT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD5862NT4G.

Lifecycle Status
ACTIVE (Last Updated: 23 hours ago)
Factory Lead Time
15 Weeks
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2010
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
115W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
96W
Case Connection
DRAIN
Turn On Delay Time
18 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
5.7m Ω @ 45A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
6000pF @ 25V
Current - Continuous Drain (Id) @ 25°C
98A Tc
Gate Charge (Qg) (Max) @ Vgs
82nC @ 10V
Rise Time
70ns
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
60 ns
Turn-Off Delay Time
35 ns
Continuous Drain Current (ID)
98A
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
90A
Drain-source On Resistance-Max
0.0057Ohm
DS Breakdown Voltage-Min
60V
Avalanche Energy Rating (Eas)
205 mJ
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

NTD5862NT4G Description NTD5862NT4G is a 60V N-Channel Power MOSFET in DPAK/IPAK. NTD5862NT4G is 100% avalanche tested featuring low RDS(on), and high current capability. NTD5862NT4G MOSFET is suitable for UPS inverters, LED backlighting, and motor driver.
NTD5862NT4G Features Low RDS(on)
Minimal conduction losses
High current capability
Robust load performance
100% avalanche tested
Voltage overstress safeguard
RoHS Compliant
NTD5862NT4G Applications Motor Driver
UPS Inverter
LED Backlighting
DC-DC Converter

NTD5862NT4G More Descriptions

NTD5862N Series 60 V 98 A 5.7 mOhm N-Channel Power MOSFET - DPAK-3
Single N-Channel Power MOSFET 60V, 98A, 5.7mΩ
Mosfet, N-Ch, 60V, 98A, To-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:98A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0044Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes |Onsemi NTD5862NT4G

Product Comparison

The three parts on the right have similar specifications to NTD5862NT4G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Technology

Terminal Form

Pin Count

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Radiation Hardening

RoHS Status

Lead Free

Transistor Application

Threshold Voltage

Drain to Source Breakdown Voltage

Height

Length

Width

REACH SVHC

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Mount

Voltage - Rated DC

Current Rating

View Compare
NTD5862NT4G

ON Semiconductor

ACTIVE (Last Updated: 23 hours ago)

15 Weeks

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

3

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

2010

e3

yes

Active

1 (Unlimited)

2

EAR99

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

3

R-PSSO-G2

1

115W Tc

Single

ENHANCEMENT MODE

96W

DRAIN

18 ns

N-Channel

5.7m Ω @ 45A, 10V

4V @ 250μA

6000pF @ 25V

98A Tc

82nC @ 10V

70ns

60V

10V

±20V

60 ns

35 ns

98A

20V

90A

0.0057Ohm

60V

205 mJ

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-
NTD5804NT4G

ON Semiconductor

LAST SHIPMENTS (Last Updated: 3 days ago)

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

4

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

1997

e3

yes

Obsolete

1 (Unlimited)

2

EAR99

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

4

R-PSSO-G2

1

71W Tc

Single

ENHANCEMENT MODE

71W

DRAIN

11.8 ns

N-Channel

8.5m Ω @ 30A, 10V

3.5V @ 250μA

2850pF @ 25V

69A Tc

45nC @ 10V

18.7ns

-

5V 10V

±20V

5.9 ns

26.8 ns

69A

20V

-

0.0085Ohm

-

-

No

RoHS Compliant

Lead Free

SWITCHING

2V

40V

2.38mm

6.73mm

6.22mm

No SVHC

-

-

-

-

-

NTD5862NT4G vs NTD5804NT4G
NTD5807NT4G

ON Semiconductor

LAST SHIPMENTS (Last Updated: 5 days ago)

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

4

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

2008

e3

yes

Obsolete

1 (Unlimited)

2

EAR99

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

4

R-PSSO-G2

1

33W Tc

Single

ENHANCEMENT MODE

33W

DRAIN

11.2 ns

N-Channel

31m Ω @ 5A, 10V

2.5V @ 250μA

603pF @ 25V

23A Tc

20nC @ 10V

20.4ns

-

4.5V 10V

±20V

2 ns

15.6 ns

23A

20V

-

-

-

-

No

RoHS Compliant

Lead Free

SWITCHING

-

40V

2.38mm

6.73mm

6.22mm

-

260

40

-

-

-

NTD5862NT4G vs NTD5807NT4G
NTD50N03R-035

ON Semiconductor

-

-

Through Hole

TO-251-3 Stub Leads, IPak

-

-

-

-55°C~175°C TJ

Tube

2007

-

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

1.5W Ta 50W Tc

Single

-

1.5W

-

-

N-Channel

12m Ω @ 30A, 11.5V

2V @ 250μA

750pF @ 12V

7.8A Ta 45A Tc

15nC @ 11.5V

84ns

-

4.5V 11.5V

±20V

84 ns

11.2 ns

45A

20V

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

-

-

25V

-

-

-

-

-

-

Through Hole

25V

45A

NTD5862NT4G vs NTD50N03R-035