IXYS IXXH75N60C3D1

Name: IXXH75N60C3D1
Brand: IXYS
SKU: 3072188-IXXH75N60C3D1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IXXH75N60C3D1

Manufacturer:: IXYS

Ventron No:: 3072188-IXXH75N60C3D1

Description:: IGBT 600V 150A 750W TO247

ECAD Model:

Datasheet:: IXXH75N60C3D1

Specifications

IXYS IXXH75N60C3D1 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXXH75N60C3D1.

Factory Lead Time
28 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
GenX3™, XPT™
Published
2013
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
750W
Terminal Position
SINGLE
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
750W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
2.3V
Max Collector Current
150A
Reverse Recovery Time
25 ns
JEDEC-95 Code
TO-247AD
Collector Emitter Breakdown Voltage
600V
Turn On Time
105 ns
Test Condition
400V, 60A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.3V @ 15V, 60A
Turn Off Time-Nom (toff)
185 ns
IGBT Type
PT
Gate Charge
107nC
Current - Collector Pulsed (Icm)
300A
Td (on/off) @ 25°C
35ns/90ns
Switching Energy
1.6mJ (on), 800μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5.5V
RoHS Status
ROHS3 Compliant

Description

IXXH75N60C3D1 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXXH75N60C3D1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXXH75N60C3D1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

IXXH75N60C3D1 More Descriptions

Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, TO-247AD
IGBT 600V 150A 750W TO247
750W 150A 600V PT TO-247AD IGBTs ROHS
new, original packaged

Product Comparison

The three parts on the right have similar specifications to IXXH75N60C3D1.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Subcategory

Max Power Dissipation

Terminal Position

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Case Connection

Input Type

Power - Max

Transistor Application

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

JEDEC-95 Code

Collector Emitter Breakdown Voltage

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

IGBT Type

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

RoHS Status

Element Configuration

Power Dissipation

Collector Emitter Saturation Voltage

Lead Free

Max Operating Temperature

Min Operating Temperature

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

View Compare
IXXH75N60C3D1

IXYS

28 Weeks

Through Hole

Through Hole

TO-247-3

SILICON

-55°C~175°C TJ

Tube

GenX3™, XPT™

2013

Active

1 (Unlimited)

3

Insulated Gate BIP Transistors

750W

SINGLE

3

R-PSFM-T3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

COLLECTOR

Standard

750W

POWER CONTROL

N-CHANNEL

2.3V

150A

25 ns

TO-247AD

600V

105 ns

400V, 60A, 5 Ω, 15V

2.3V @ 15V, 60A

185 ns

PT

107nC

300A

35ns/90ns

1.6mJ (on), 800μJ (off)

20V

5.5V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-
IXXH80N65B4H1

IXYS

18 Weeks

Through Hole

Through Hole

TO-247-3

-

-55°C~175°C TJ

Tube

GenX4™, XPT™

2015

Active

1 (Unlimited)

-

-

625W

-

-

-

-

-

-

-

Standard

-

-

-

2V

160A

150ns

-

650V

-

400V, 80A, 3 Ω, 15V

2V @ 15V, 80A

-

PT

120nC

430A

38ns/120ns

3.77mJ (on), 1.2mJ (off)

-

-

ROHS3 Compliant

Single

625W

1.65V

Lead Free

-

-

-

-

IXXH75N60C3D1 vs IXXH80N65B4H1
IXXH50N60B3D1

IXYS

28 Weeks

Through Hole

Through Hole

TO-247-3

-

-

Tube

GenX3™, XPT™

-

Active

1 (Unlimited)

3

Insulated Gate BIP Transistors

600W

SINGLE

3

R-PSFM-T3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

COLLECTOR

Standard

-

POWER CONTROL

N-CHANNEL

1.8V

120A

25 ns

TO-247AD

600V

75 ns

360V, 36A, 5 Ω, 15V

1.8V @ 15V, 36A

320 ns

PT

70nC

200A

27ns/100ns

670μJ (on), 740μJ (off)

20V

5.5V

ROHS3 Compliant

-

600W

1.55V

-

175°C

-55°C

NOT SPECIFIED

NOT SPECIFIED

IXXH75N60C3D1 vs IXXH50N60B3D1
IXXH40N65B4

IXYS

28 Weeks

Through Hole

Through Hole

TO-247-3

-

-55°C~175°C TJ

Tube

GenX4™, XPT™

2014

Active

1 (Unlimited)

-

-

455W

-

-

-

-

-

-

-

Standard

-

-

-

1.8V

120A

-

-

650V

-

400V, 40A, 5 Ω, 15V

1.8V @ 15V, 40A

-

PT

77nC

240A

28ns/144ns

1.4mJ (on), 560μJ (off)

-

-

ROHS3 Compliant

Single

455W

1.5V

-

-

-

-

-

IXXH75N60C3D1 vs IXXH40N65B4