IXYS IXXH40N65B4
- Part Number:
- IXXH40N65B4
- Manufacturer:
- IXYS
- Ventron No:
- 2496556-IXXH40N65B4
- Description:
- IGBT 650V 120A 455W TO247AD
- ECAD Model:
-
- Datasheet:
- IXXH40N65B4
IXYS IXXH40N65B4 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXXH40N65B4.
- Factory Lead Time28 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesGenX4™, XPT™
- Published2014
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Power Dissipation455W
- Element ConfigurationSingle
- Power Dissipation455W
- Input TypeStandard
- Collector Emitter Voltage (VCEO)1.8V
- Max Collector Current120A
- Collector Emitter Breakdown Voltage650V
- Collector Emitter Saturation Voltage1.5V
- Test Condition400V, 40A, 5 Ω, 15V
- Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 40A
- IGBT TypePT
- Gate Charge77nC
- Current - Collector Pulsed (Icm)240A
- Td (on/off) @ 25°C28ns/144ns
- Switching Energy1.4mJ (on), 560μJ (off)
- RoHS StatusROHS3 Compliant
IXXH40N65B4 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXXH40N65B4 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXXH40N65B4. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXXH40N65B4 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXXH40N65B4. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXXH40N65B4 More Descriptions
IGBT Transistors 650V/120A TRENCH IGBT GENX4 XPT
IGBT 650V 120A 455W TO247AD
French Electronic Distributor since 1988
IGBT 650V 120A 455W TO247AD
French Electronic Distributor since 1988
The three parts on the right have similar specifications to IXXH40N65B4.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Max Power DissipationElement ConfigurationPower DissipationInput TypeCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTest ConditionVce(on) (Max) @ Vge, IcIGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyRoHS StatusWeightTransistor Element MaterialNumber of TerminationsSubcategoryTerminal PositionBase Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationTransistor ApplicationPolarity/Channel TypeJEDEC-95 CodeTurn On TimeTurn Off Time-Nom (toff)Gate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxAdditional FeatureCase ConnectionLead FreeTurn On Delay TimeTurn-Off Delay TimeView Compare
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IXXH40N65B428 WeeksThrough HoleThrough HoleTO-247-3-55°C~175°C TJTubeGenX4™, XPT™2014Active1 (Unlimited)455WSingle455WStandard1.8V120A650V1.5V400V, 40A, 5 Ω, 15V1.8V @ 15V, 40APT77nC240A28ns/144ns1.4mJ (on), 560μJ (off)ROHS3 Compliant------------------------ -
28 WeeksThrough HoleThrough HoleTO-247-3-55°C~175°C TJTubeGenX3™, XPT™2013Active1 (Unlimited)830W-830WStandard2.2V190A600V2.2V360V, 70A, 2 Ω, 15V2.2V @ 15V, 70APT150nC380A30ns/90ns2mJ (on), 950μJ (off)ROHS3 Compliant6.500007gSILICON3Insulated Gate BIP TransistorsSINGLEIXX*N603R-PSFM-T3Not Qualified1SINGLEPOWER CONTROLN-CHANNELTO-247AD95 ns220 ns20V5.5V-----
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28 WeeksThrough HoleThrough HoleTO-247-3-55°C~175°C TJTubeGenX3™, XPT™2013Active1 (Unlimited)830W-830WStandard1.8V220A600V1.8V360V, 70A, 2 Ω, 15V1.8V @ 15V, 70APT143nC480A30ns/120ns1.9mJ (on), 2mJ (off)ROHS3 Compliant6.500007gSILICON3Insulated Gate BIP TransistorsSINGLEIXX*N603R-PSFM-T3Not Qualified1SINGLEPOWER CONTROLN-CHANNELTO-247AD92 ns350 ns20V5.5VAVALANCHE RATEDCOLLECTORLead Free--
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17 WeeksThrough HoleThrough HoleTO-247-3-55°C~175°C TJTubeGenX4™, XPT™2013Active1 (Unlimited)230WSingle230WStandard2V65A650V1.66V400V, 30A, 15 Ω, 15V2V @ 15V, 30APT52nC146A32ns/170ns1.55mJ (on), 480μJ (off)ROHS3 Compliant---Insulated Gate BIP Transistors--------N-CHANNEL---20V6.5V--Lead Free32 ns170 ns
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