IXYS IXXH80N65B4H1
- Part Number:
- IXXH80N65B4H1
- Manufacturer:
- IXYS
- Ventron No:
- 2854878-IXXH80N65B4H1
- Description:
- IGBT 650V 160A 625W TO247AD
- ECAD Model:
-
- Datasheet:
- IXXH80N65B4H1
IXYS IXXH80N65B4H1 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXXH80N65B4H1.
- Factory Lead Time18 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesGenX4™, XPT™
- Published2015
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Power Dissipation625W
- Element ConfigurationSingle
- Power Dissipation625W
- Input TypeStandard
- Collector Emitter Voltage (VCEO)2V
- Max Collector Current160A
- Reverse Recovery Time150ns
- Collector Emitter Breakdown Voltage650V
- Collector Emitter Saturation Voltage1.65V
- Test Condition400V, 80A, 3 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2V @ 15V, 80A
- IGBT TypePT
- Gate Charge120nC
- Current - Collector Pulsed (Icm)430A
- Td (on/off) @ 25°C38ns/120ns
- Switching Energy3.77mJ (on), 1.2mJ (off)
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IXXH80N65B4H1 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXXH80N65B4H1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXXH80N65B4H1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXXH80N65B4H1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXXH80N65B4H1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
The three parts on the right have similar specifications to IXXH80N65B4H1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Max Power DissipationElement ConfigurationPower DissipationInput TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTest ConditionVce(on) (Max) @ Vge, IcIGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyRoHS StatusLead FreeWeightTransistor Element MaterialNumber of TerminationsAdditional FeatureSubcategoryTerminal PositionBase Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationCase ConnectionTransistor ApplicationPolarity/Channel TypeJEDEC-95 CodeTurn On TimeTurn Off Time-Nom (toff)Gate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxNumber of PinsRadiation HardeningTurn On Delay TimeTurn-Off Delay TimeView Compare
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IXXH80N65B4H118 WeeksThrough HoleThrough HoleTO-247-3-55°C~175°C TJTubeGenX4™, XPT™2015Active1 (Unlimited)625WSingle625WStandard2V160A150ns650V1.65V400V, 80A, 3 Ω, 15V2V @ 15V, 80APT120nC430A38ns/120ns3.77mJ (on), 1.2mJ (off)ROHS3 CompliantLead Free------------------------- -
28 WeeksThrough HoleThrough HoleTO-247-3-55°C~175°C TJTubeGenX3™, XPT™2013Active1 (Unlimited)830W-830WStandard1.8V220A-600V1.8V360V, 70A, 2 Ω, 15V1.8V @ 15V, 70APT143nC480A30ns/120ns1.9mJ (on), 2mJ (off)ROHS3 CompliantLead Free6.500007gSILICON3AVALANCHE RATEDInsulated Gate BIP TransistorsSINGLEIXX*N603R-PSFM-T3Not Qualified1SINGLECOLLECTORPOWER CONTROLN-CHANNELTO-247AD92 ns350 ns20V5.5V----
-
28 WeeksThrough HoleThrough HoleTO-247-3-55°C~175°C TJTubeGenX4™, XPT™2015Active1 (Unlimited)880WSingle880WStandard2.35V234A-650V1.98V400V, 55A, 2 Ω, 15V2.35V @ 15V, 110APT180nC600A35ns/143ns2.3mJ (on), 600μJ (off)ROHS3 CompliantLead Free----Insulated Gate BIP Transistors-110N65-------N-CHANNEL---20V6.5V3No--
-
17 WeeksThrough HoleThrough HoleTO-247-3-55°C~175°C TJTubeGenX4™, XPT™2013Active1 (Unlimited)230WSingle230WStandard2V65A-650V1.66V400V, 30A, 15 Ω, 15V2V @ 15V, 30APT52nC146A32ns/170ns1.55mJ (on), 480μJ (off)ROHS3 CompliantLead Free----Insulated Gate BIP Transistors---------N-CHANNEL---20V6.5V--32 ns170 ns
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