IXYS IXXH100N60B3
- Part Number:
- IXXH100N60B3
- Manufacturer:
- IXYS
- Ventron No:
- 3554982-IXXH100N60B3
- Description:
- IGBT 600V 220A 830W TO247AD
- ECAD Model:
-
- Datasheet:
- IXXH100N60B3
IXYS IXXH100N60B3 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXXH100N60B3.
- Factory Lead Time28 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Weight6.500007g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesGenX3™, XPT™
- Published2013
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Additional FeatureAVALANCHE RATED
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation830W
- Terminal PositionSINGLE
- Base Part NumberIXX*N60
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation830W
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)1.8V
- Max Collector Current220A
- JEDEC-95 CodeTO-247AD
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage1.8V
- Turn On Time92 ns
- Test Condition360V, 70A, 2 Ω, 15V
- Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 70A
- Turn Off Time-Nom (toff)350 ns
- IGBT TypePT
- Gate Charge143nC
- Current - Collector Pulsed (Icm)480A
- Td (on/off) @ 25°C30ns/120ns
- Switching Energy1.9mJ (on), 2mJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max5.5V
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IXXH100N60B3 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXXH100N60B3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXXH100N60B3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXXH100N60B3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXXH100N60B3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXXH100N60B3 More Descriptions
Trans IGBT Chip N-CH 600V 220A 830000mW 3-Pin(3 Tab) TO-247AD
IXXH Series 600 V 100 A Through Hole GenX3TM IGBT - TO-247AD
IGBT Transistors XPT IGBT B3-Class 600V/210Amp
IXXH Series 600 V 100 A Through Hole GenX3TM IGBT - TO-247AD
IGBT Transistors XPT IGBT B3-Class 600V/210Amp
The three parts on the right have similar specifications to IXXH100N60B3.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureSubcategoryMax Power DissipationTerminal PositionBase Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower DissipationCase ConnectionInput TypeTransistor ApplicationPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentJEDEC-95 CodeCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxRoHS StatusLead FreeNumber of PinsElement ConfigurationRadiation HardeningMax Operating TemperatureMin Operating TemperaturePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Reverse Recovery TimeView Compare
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IXXH100N60B328 WeeksThrough HoleThrough HoleTO-247-36.500007gSILICON-55°C~175°C TJTubeGenX3™, XPT™2013Active1 (Unlimited)3AVALANCHE RATEDInsulated Gate BIP Transistors830WSINGLEIXX*N603R-PSFM-T3Not Qualified1SINGLE830WCOLLECTORStandardPOWER CONTROLN-CHANNEL1.8V220ATO-247AD600V1.8V92 ns360V, 70A, 2 Ω, 15V1.8V @ 15V, 70A350 nsPT143nC480A30ns/120ns1.9mJ (on), 2mJ (off)20V5.5VROHS3 CompliantLead Free--------- -
28 WeeksThrough HoleThrough HoleTO-247-3---55°C~175°C TJTubeGenX4™, XPT™2015Active1 (Unlimited)--Insulated Gate BIP Transistors880W-110N65-----880W-Standard-N-CHANNEL2.35V234A-650V1.98V-400V, 55A, 2 Ω, 15V2.35V @ 15V, 110A-PT180nC600A35ns/143ns2.3mJ (on), 600μJ (off)20V6.5VROHS3 CompliantLead Free3SingleNo-----
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28 WeeksThrough HoleThrough HoleTO-247-3---TubeGenX3™, XPT™-Active1 (Unlimited)3-Insulated Gate BIP Transistors600WSINGLE-3R-PSFM-T3Not Qualified1SINGLE WITH BUILT-IN DIODE600WCOLLECTORStandardPOWER CONTROLN-CHANNEL1.8V120ATO-247AD600V1.55V75 ns360V, 36A, 5 Ω, 15V1.8V @ 15V, 36A320 nsPT70nC200A27ns/100ns670μJ (on), 740μJ (off)20V5.5VROHS3 Compliant----175°C-55°CNOT SPECIFIEDNOT SPECIFIED25 ns
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28 WeeksThrough HoleThrough HoleTO-247-3---55°C~175°C TJTubeGenX4™, XPT™2014Active1 (Unlimited)---455W-------455W-Standard--1.8V120A-650V1.5V-400V, 40A, 5 Ω, 15V1.8V @ 15V, 40A-PT77nC240A28ns/144ns1.4mJ (on), 560μJ (off)--ROHS3 Compliant--Single------
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