IXYS IXXH50N60B3D1

Name: IXXH50N60B3D1
Brand: IXYS
SKU: 2496668-IXXH50N60B3D1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IXXH50N60B3D1

Manufacturer:: IXYS

Ventron No:: 2496668-IXXH50N60B3D1

Description:: IGBT 600V 120A 600W TO247

ECAD Model:

Datasheet:: IXXH50N60B3D1

Specifications

IXYS IXXH50N60B3D1 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXXH50N60B3D1.

Factory Lead Time
28 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Packaging
Tube
Series
GenX3™, XPT™
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
600W
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation
600W
Case Connection
COLLECTOR
Input Type
Standard
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
1.8V
Max Collector Current
120A
Reverse Recovery Time
25 ns
JEDEC-95 Code
TO-247AD
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.55V
Turn On Time
75 ns
Test Condition
360V, 36A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.8V @ 15V, 36A
Turn Off Time-Nom (toff)
320 ns
IGBT Type
PT
Gate Charge
70nC
Current - Collector Pulsed (Icm)
200A
Td (on/off) @ 25°C
27ns/100ns
Switching Energy
670μJ (on), 740μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5.5V
RoHS Status
ROHS3 Compliant

Description

IXXH50N60B3D1 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXXH50N60B3D1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXXH50N60B3D1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

IXXH50N60B3D1 More Descriptions

Trans IGBT Chip N-CH 600V 120A 600000mW 3-Pin(3 Tab) TO-247AD
IGBT Transistors XPT 600V IGBT GenX3 XPT IGBT
IGBT 600V 120A 600W TO247
600V, 50A, IGBT, TO-247
OEMs, CMs ONLY (NO BROKERS)

Product Comparison

The three parts on the right have similar specifications to IXXH50N60B3D1.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Max Operating Temperature

Min Operating Temperature

Subcategory

Max Power Dissipation

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation

Case Connection

Input Type

Transistor Application

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

JEDEC-95 Code

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

IGBT Type

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

RoHS Status

Weight

Transistor Element Material

Operating Temperature

Published

Base Part Number

Additional Feature

Lead Free

Element Configuration

View Compare
IXXH50N60B3D1

IXYS

28 Weeks

Through Hole

Through Hole

TO-247-3

Tube

GenX3™, XPT™

Active

1 (Unlimited)

3

175°C

-55°C

Insulated Gate BIP Transistors

600W

SINGLE

NOT SPECIFIED

NOT SPECIFIED

3

R-PSFM-T3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

600W

COLLECTOR

Standard

POWER CONTROL

N-CHANNEL

1.8V

120A

25 ns

TO-247AD

600V

1.55V

75 ns

360V, 36A, 5 Ω, 15V

1.8V @ 15V, 36A

320 ns

PT

70nC

200A

27ns/100ns

670μJ (on), 740μJ (off)

20V

5.5V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-
IXXH100N60C3

IXYS

28 Weeks

Through Hole

Through Hole

TO-247-3

Tube

GenX3™, XPT™

Active

1 (Unlimited)

3

-

-

Insulated Gate BIP Transistors

830W

SINGLE

-

-

3

R-PSFM-T3

Not Qualified

1

SINGLE

830W

-

Standard

POWER CONTROL

N-CHANNEL

2.2V

190A

-

TO-247AD

600V

2.2V

95 ns

360V, 70A, 2 Ω, 15V

2.2V @ 15V, 70A

220 ns

PT

150nC

380A

30ns/90ns

2mJ (on), 950μJ (off)

20V

5.5V

ROHS3 Compliant

6.500007g

SILICON

-55°C~175°C TJ

2013

IXX*N60

-

-

-

IXXH50N60B3D1 vs IXXH100N60C3
IXXH100N60B3

IXYS

28 Weeks

Through Hole

Through Hole

TO-247-3

Tube

GenX3™, XPT™

Active

1 (Unlimited)

3

-

-

Insulated Gate BIP Transistors

830W

SINGLE

-

-

3

R-PSFM-T3

Not Qualified

1

SINGLE

830W

COLLECTOR

Standard

POWER CONTROL

N-CHANNEL

1.8V

220A

-

TO-247AD

600V

1.8V

92 ns

360V, 70A, 2 Ω, 15V

1.8V @ 15V, 70A

350 ns

PT

143nC

480A

30ns/120ns

1.9mJ (on), 2mJ (off)

20V

5.5V

ROHS3 Compliant

6.500007g

SILICON

-55°C~175°C TJ

2013

IXX*N60

AVALANCHE RATED

Lead Free

-

IXXH50N60B3D1 vs IXXH100N60B3
IXXH40N65B4

IXYS

28 Weeks

Through Hole

Through Hole

TO-247-3

Tube

GenX4™, XPT™

Active

1 (Unlimited)

-

-

-

-

455W

-

-

-

-

-

-

-

-

455W

-

Standard

-

-

1.8V

120A

-

-

650V

1.5V

-

400V, 40A, 5 Ω, 15V

1.8V @ 15V, 40A

-

PT

77nC

240A

28ns/144ns

1.4mJ (on), 560μJ (off)

-

-

ROHS3 Compliant

-

-

-55°C~175°C TJ

2014

-

-

-

Single

IXXH50N60B3D1 vs IXXH40N65B4