IXXH30N65B4

IXYS IXXH30N65B4

Part Number:
IXXH30N65B4
Manufacturer:
IXYS
Ventron No:
2854941-IXXH30N65B4
Description:
IGBT 650V 65A 230W TO247AD
ECAD Model:
Datasheet:
IXXH30N65B4

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Specifications
IXYS IXXH30N65B4 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXXH30N65B4.
  • Factory Lead Time
    17 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    GenX4™, XPT™
  • Published
    2013
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    230W
  • Element Configuration
    Single
  • Power Dissipation
    230W
  • Input Type
    Standard
  • Turn On Delay Time
    32 ns
  • Polarity/Channel Type
    N-CHANNEL
  • Turn-Off Delay Time
    170 ns
  • Collector Emitter Voltage (VCEO)
    2V
  • Max Collector Current
    65A
  • Collector Emitter Breakdown Voltage
    650V
  • Collector Emitter Saturation Voltage
    1.66V
  • Test Condition
    400V, 30A, 15 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2V @ 15V, 30A
  • IGBT Type
    PT
  • Gate Charge
    52nC
  • Current - Collector Pulsed (Icm)
    146A
  • Td (on/off) @ 25°C
    32ns/170ns
  • Switching Energy
    1.55mJ (on), 480μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IXXH30N65B4 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXXH30N65B4 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXXH30N65B4. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXXH30N65B4 More Descriptions
IXXH Series GenX4 650 V 65 A Flange Mount IGBT - TO-247AD
Insulated Gate Bipolar Transistor, 65A I(C), 650V V(BR)CES, N-Channel
IGBT Transistors 650V/65A Trench IGBT GenX4 XPT
Product Comparison
The three parts on the right have similar specifications to IXXH30N65B4.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Subcategory
    Max Power Dissipation
    Element Configuration
    Power Dissipation
    Input Type
    Turn On Delay Time
    Polarity/Channel Type
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    RoHS Status
    Lead Free
    Number of Pins
    Base Part Number
    Radiation Hardening
    Reverse Recovery Time
    View Compare
  • IXXH30N65B4
    IXXH30N65B4
    17 Weeks
    Through Hole
    Through Hole
    TO-247-3
    -55°C~175°C TJ
    Tube
    GenX4™, XPT™
    2013
    Active
    1 (Unlimited)
    Insulated Gate BIP Transistors
    230W
    Single
    230W
    Standard
    32 ns
    N-CHANNEL
    170 ns
    2V
    65A
    650V
    1.66V
    400V, 30A, 15 Ω, 15V
    2V @ 15V, 30A
    PT
    52nC
    146A
    32ns/170ns
    1.55mJ (on), 480μJ (off)
    20V
    6.5V
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
  • IXXH110N65C4
    28 Weeks
    Through Hole
    Through Hole
    TO-247-3
    -55°C~175°C TJ
    Tube
    GenX4™, XPT™
    2015
    Active
    1 (Unlimited)
    Insulated Gate BIP Transistors
    880W
    Single
    880W
    Standard
    -
    N-CHANNEL
    -
    2.35V
    234A
    650V
    1.98V
    400V, 55A, 2 Ω, 15V
    2.35V @ 15V, 110A
    PT
    180nC
    600A
    35ns/143ns
    2.3mJ (on), 600μJ (off)
    20V
    6.5V
    ROHS3 Compliant
    Lead Free
    3
    110N65
    No
    -
  • IXXH80N65B4H1
    18 Weeks
    Through Hole
    Through Hole
    TO-247-3
    -55°C~175°C TJ
    Tube
    GenX4™, XPT™
    2015
    Active
    1 (Unlimited)
    -
    625W
    Single
    625W
    Standard
    -
    -
    -
    2V
    160A
    650V
    1.65V
    400V, 80A, 3 Ω, 15V
    2V @ 15V, 80A
    PT
    120nC
    430A
    38ns/120ns
    3.77mJ (on), 1.2mJ (off)
    -
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    150ns
  • IXXH40N65B4
    28 Weeks
    Through Hole
    Through Hole
    TO-247-3
    -55°C~175°C TJ
    Tube
    GenX4™, XPT™
    2014
    Active
    1 (Unlimited)
    -
    455W
    Single
    455W
    Standard
    -
    -
    -
    1.8V
    120A
    650V
    1.5V
    400V, 40A, 5 Ω, 15V
    1.8V @ 15V, 40A
    PT
    77nC
    240A
    28ns/144ns
    1.4mJ (on), 560μJ (off)
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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