IXYS IXXH30N65B4
- Part Number:
- IXXH30N65B4
- Manufacturer:
- IXYS
- Ventron No:
- 2854941-IXXH30N65B4
- Description:
- IGBT 650V 65A 230W TO247AD
- Datasheet:
- IXXH30N65B4
IXYS IXXH30N65B4 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXXH30N65B4.
- Factory Lead Time17 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesGenX4™, XPT™
- Published2013
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation230W
- Element ConfigurationSingle
- Power Dissipation230W
- Input TypeStandard
- Turn On Delay Time32 ns
- Polarity/Channel TypeN-CHANNEL
- Turn-Off Delay Time170 ns
- Collector Emitter Voltage (VCEO)2V
- Max Collector Current65A
- Collector Emitter Breakdown Voltage650V
- Collector Emitter Saturation Voltage1.66V
- Test Condition400V, 30A, 15 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2V @ 15V, 30A
- IGBT TypePT
- Gate Charge52nC
- Current - Collector Pulsed (Icm)146A
- Td (on/off) @ 25°C32ns/170ns
- Switching Energy1.55mJ (on), 480μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max6.5V
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IXXH30N65B4 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXXH30N65B4 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXXH30N65B4. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXXH30N65B4 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXXH30N65B4. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXXH30N65B4 More Descriptions
IXXH Series GenX4 650 V 65 A Flange Mount IGBT - TO-247AD
Insulated Gate Bipolar Transistor, 65A I(C), 650V V(BR)CES, N-Channel
IGBT Transistors 650V/65A Trench IGBT GenX4 XPT
Insulated Gate Bipolar Transistor, 65A I(C), 650V V(BR)CES, N-Channel
IGBT Transistors 650V/65A Trench IGBT GenX4 XPT
The three parts on the right have similar specifications to IXXH30N65B4.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)SubcategoryMax Power DissipationElement ConfigurationPower DissipationInput TypeTurn On Delay TimePolarity/Channel TypeTurn-Off Delay TimeCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTest ConditionVce(on) (Max) @ Vge, IcIGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxRoHS StatusLead FreeNumber of PinsBase Part NumberRadiation HardeningReverse Recovery TimeView Compare
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IXXH30N65B417 WeeksThrough HoleThrough HoleTO-247-3-55°C~175°C TJTubeGenX4™, XPT™2013Active1 (Unlimited)Insulated Gate BIP Transistors230WSingle230WStandard32 nsN-CHANNEL170 ns2V65A650V1.66V400V, 30A, 15 Ω, 15V2V @ 15V, 30APT52nC146A32ns/170ns1.55mJ (on), 480μJ (off)20V6.5VROHS3 CompliantLead Free-----
-
28 WeeksThrough HoleThrough HoleTO-247-3-55°C~175°C TJTubeGenX4™, XPT™2015Active1 (Unlimited)Insulated Gate BIP Transistors880WSingle880WStandard-N-CHANNEL-2.35V234A650V1.98V400V, 55A, 2 Ω, 15V2.35V @ 15V, 110APT180nC600A35ns/143ns2.3mJ (on), 600μJ (off)20V6.5VROHS3 CompliantLead Free3110N65No-
-
18 WeeksThrough HoleThrough HoleTO-247-3-55°C~175°C TJTubeGenX4™, XPT™2015Active1 (Unlimited)-625WSingle625WStandard---2V160A650V1.65V400V, 80A, 3 Ω, 15V2V @ 15V, 80APT120nC430A38ns/120ns3.77mJ (on), 1.2mJ (off)--ROHS3 CompliantLead Free---150ns
-
28 WeeksThrough HoleThrough HoleTO-247-3-55°C~175°C TJTubeGenX4™, XPT™2014Active1 (Unlimited)-455WSingle455WStandard---1.8V120A650V1.5V400V, 40A, 5 Ω, 15V1.8V @ 15V, 40APT77nC240A28ns/144ns1.4mJ (on), 560μJ (off)--ROHS3 Compliant-----
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