IXYS IXXH110N65C4
- Part Number:
- IXXH110N65C4
- Manufacturer:
- IXYS
- Ventron No:
- 3072115-IXXH110N65C4
- Description:
- IGBT 650V 234A 880W TO247AD
- Datasheet:
- IXXH110N65C4
IXYS IXXH110N65C4 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXXH110N65C4.
- Factory Lead Time28 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesGenX4™, XPT™
- Published2015
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation880W
- Base Part Number110N65
- Element ConfigurationSingle
- Power Dissipation880W
- Input TypeStandard
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)2.35V
- Max Collector Current234A
- Collector Emitter Breakdown Voltage650V
- Collector Emitter Saturation Voltage1.98V
- Test Condition400V, 55A, 2 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.35V @ 15V, 110A
- IGBT TypePT
- Gate Charge180nC
- Current - Collector Pulsed (Icm)600A
- Td (on/off) @ 25°C35ns/143ns
- Switching Energy2.3mJ (on), 600μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max6.5V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IXXH110N65C4 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXXH110N65C4 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXXH110N65C4. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXXH110N65C4 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXXH110N65C4. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXXH110N65C4 More Descriptions
Transistor, Igbt, 650V, 235A, To-247Ad Rohs Compliant: Yes |Ixys Semiconductor IXXH110N65C4
Trans IGBT Chip N-CH 650V 234A 880000mW 3-Pin(3 Tab) TO-247AD
IGBT Transistors 650V/234A TRENCH IGBT GENX4 XPT
Trans IGBT Chip N-CH 650V 234A 880000mW 3-Pin(3 Tab) TO-247AD
IGBT Transistors 650V/234A TRENCH IGBT GENX4 XPT
The three parts on the right have similar specifications to IXXH110N65C4.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)SubcategoryMax Power DissipationBase Part NumberElement ConfigurationPower DissipationInput TypePolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTest ConditionVce(on) (Max) @ Vge, IcIGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxRadiation HardeningRoHS StatusLead FreeWeightTransistor Element MaterialNumber of TerminationsAdditional FeatureTerminal PositionPin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationCase ConnectionTransistor ApplicationJEDEC-95 CodeTurn On TimeTurn Off Time-Nom (toff)Reverse Recovery TimeView Compare
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IXXH110N65C428 WeeksThrough HoleThrough HoleTO-247-33-55°C~175°C TJTubeGenX4™, XPT™2015Active1 (Unlimited)Insulated Gate BIP Transistors880W110N65Single880WStandardN-CHANNEL2.35V234A650V1.98V400V, 55A, 2 Ω, 15V2.35V @ 15V, 110APT180nC600A35ns/143ns2.3mJ (on), 600μJ (off)20V6.5VNoROHS3 CompliantLead Free-----------------
-
28 WeeksThrough HoleThrough HoleTO-247-3--55°C~175°C TJTubeGenX3™, XPT™2013Active1 (Unlimited)Insulated Gate BIP Transistors830WIXX*N60-830WStandardN-CHANNEL1.8V220A600V1.8V360V, 70A, 2 Ω, 15V1.8V @ 15V, 70APT143nC480A30ns/120ns1.9mJ (on), 2mJ (off)20V5.5V-ROHS3 CompliantLead Free6.500007gSILICON3AVALANCHE RATEDSINGLE3R-PSFM-T3Not Qualified1SINGLECOLLECTORPOWER CONTROLTO-247AD92 ns350 ns-
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18 WeeksThrough HoleThrough HoleTO-247-3--55°C~175°C TJTubeGenX4™, XPT™2015Active1 (Unlimited)-625W-Single625WStandard-2V160A650V1.65V400V, 80A, 3 Ω, 15V2V @ 15V, 80APT120nC430A38ns/120ns3.77mJ (on), 1.2mJ (off)---ROHS3 CompliantLead Free---------------150ns
-
28 WeeksThrough HoleThrough HoleTO-247-3--55°C~175°C TJTubeGenX4™, XPT™2014Active1 (Unlimited)-455W-Single455WStandard-1.8V120A650V1.5V400V, 40A, 5 Ω, 15V1.8V @ 15V, 40APT77nC240A28ns/144ns1.4mJ (on), 560μJ (off)---ROHS3 Compliant-----------------
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