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IXGT24N170A

IXYS IXGT24N170A

Part Number:
IXGT24N170A
Manufacturer:
IXYS
Ventron No:
2854959-IXGT24N170A
Description:
IGBT 1700V 24A 250W TO268
ECAD Model:
Datasheet:
IXGT24N170A

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Specifications
IXYS IXGT24N170A technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGT24N170A.
  • Factory Lead Time
    24 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
  • Weight
    4.500005g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2004
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    250W
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    IXG*24N170
  • Pin Count
    4
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Power - Max
    250W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    1.7kV
  • Max Collector Current
    24A
  • Collector Emitter Breakdown Voltage
    1.7kV
  • Voltage - Collector Emitter Breakdown (Max)
    1700V
  • Collector Emitter Saturation Voltage
    4.5V
  • Turn On Time
    98 ns
  • Test Condition
    850V, 24A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    6V @ 15V, 16A
  • Turn Off Time-Nom (toff)
    275 ns
  • IGBT Type
    NPT
  • Gate Charge
    140nC
  • Current - Collector Pulsed (Icm)
    75A
  • Td (on/off) @ 25°C
    21ns/336ns
  • Switching Energy
    2.97mJ (on), 790μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    5V
  • Fall Time-Max (tf)
    80ns
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
Description: The IXYS Transistors - IGBTs - Single IXGT24N170A is a single N-channel insulated gate bipolar transistor (IGBT) chip with a maximum voltage rating of 1.7kV and a maximum current rating of 25A. It is housed in a 3-pin (2 Tab) TO-268AB package.

Features:
- Maximum voltage rating of 1.7kV
- Maximum current rating of 25A
- 3-pin (2 Tab) TO-268AB package
- Low on-state voltage
- Low switching losses
- High frequency operation
- High surge current capability
- High temperature operation

Applications: The IXYS Transistors - IGBTs - Single IXGT24N170A is suitable for use in a variety of applications, including motor control, power supplies, UPS systems, welding, and solar inverters. It is also suitable for use in high-power switching applications, such as high-voltage DC-DC converters, AC-DC converters, and DC-AC inverters.
IXGT24N170A More Descriptions
IXGT Series 1700 V,24 A Very High Voltage NPT IGBT, TO-268
Trans IGBT Chip N-CH 1.7KV 25A 3-Pin(2 Tab) TO-268
IGBT 1700V 24A 250W TO268
OEMs, CMs ONLY (NO BROKERS)
Product Comparison
The three parts on the right have similar specifications to IXGT24N170A.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Subcategory
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Element Configuration
    Case Connection
    Input Type
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    RoHS Status
    Lead Free
    Reach Compliance Code
    Additional Feature
    Reverse Recovery Time
    Radiation Hardening
    Number of Pins
    Height
    Length
    Width
    View Compare
  • IXGT24N170A
    IXGT24N170A
    IXYS
    24 Weeks
    Surface Mount
    Surface Mount
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
    4.500005g
    SILICON
    -55°C~150°C TJ
    Tube
    2004
    e3
    yes
    Active
    1 (Unlimited)
    2
    Matte Tin (Sn)
    Insulated Gate BIP Transistors
    250W
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    IXG*24N170
    4
    R-PSSO-G2
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    250W
    POWER CONTROL
    N-CHANNEL
    1.7kV
    24A
    1.7kV
    1700V
    4.5V
    98 ns
    850V, 24A, 10 Ω, 15V
    6V @ 15V, 16A
    275 ns
    NPT
    140nC
    75A
    21ns/336ns
    2.97mJ (on), 790μJ (off)
    20V
    5V
    80ns
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXGT20N100
    IXGT20N100
    IXYS
    8 Weeks
    Surface Mount
    Surface Mount
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
    4.500005g
    SILICON
    -55°C~150°C TJ
    Tube
    2000
    e3
    yes
    Active
    1 (Unlimited)
    2
    PURE TIN
    Insulated Gate BIP Transistors
    150W
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    IXG*20N100
    3
    R-PSSO-G2
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    150W
    POWER CONTROL
    N-CHANNEL
    1kV
    40A
    1kV
    1000V
    3V
    30 ns
    800V, 20A, 47 Ω, 15V
    3V @ 15V, 20A
    700 ns
    PT
    73nC
    80A
    30ns/350ns
    3.5mJ (off)
    20V
    5V
    700ns
    ROHS3 Compliant
    -
    unknown
    -
    -
    -
    -
    -
    -
    -
    IXGT24N170A vs IXGT20N100
  • IXGT24N170AH1
    IXGT24N170AH1
    IXYS
    25 Weeks
    Surface Mount
    Surface Mount
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
    6.500007g
    SILICON
    -55°C~150°C TJ
    Tube
    2009
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    Matte Tin (Sn)
    Insulated Gate BIP Transistors
    250W
    GULL WING
    -
    -
    IXG*24N170
    4
    R-PSSO-G2
    -
    1
    Single
    COLLECTOR
    Standard
    250W
    POWER CONTROL
    N-CHANNEL
    1.7kV
    24A
    1.7kV
    1700V
    6V
    54 ns
    850V, 24A, 10 Ω, 15V
    6V @ 15V, 16A
    456 ns
    NPT
    140nC
    75A
    21ns/336ns
    2.97mJ (on), 790μJ (off)
    20V
    5V
    80ns
    RoHS Compliant
    -
    -
    LOW CONDUCTION LOSS
    200 ns
    No
    -
    -
    -
    -
    IXGT24N170A vs IXGT24N170AH1
  • IXGT40N120B2D1
    IXGT40N120B2D1
    IXYS
    8 Weeks
    Surface Mount
    Surface Mount
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
    4.500005g
    SILICON
    -55°C~150°C TJ
    Tube
    2008
    e3
    yes
    Active
    1 (Unlimited)
    2
    PURE TIN
    Insulated Gate BIP Transistors
    380W
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    IXG*40N120
    4
    R-PSSO-G2
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    380W
    POWER CONTROL
    N-CHANNEL
    1.2kV
    75A
    1.2kV
    1200V
    -
    79 ns
    960V, 40A, 2 Ω, 15V
    3.5V @ 15V, 40A
    770 ns
    PT
    138nC
    200A
    21ns/290ns
    4.5mJ (on), 3mJ (off)
    20V
    5V
    270ns
    ROHS3 Compliant
    -
    unknown
    -
    100 ns
    -
    3
    5.1mm
    16.05mm
    14mm
    IXGT24N170A vs IXGT40N120B2D1
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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