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IXGT20N100

IXYS IXGT20N100

Part Number:
IXGT20N100
Manufacturer:
IXYS
Ventron No:
3072152-IXGT20N100
Description:
IGBT 1000V 40A 150W TO268
ECAD Model:
Datasheet:
IXGT20N100

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Specifications
IXYS IXGT20N100 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGT20N100.
  • Factory Lead Time
    8 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
  • Weight
    4.500005g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2000
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Terminal Finish
    PURE TIN
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    150W
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    IXG*20N100
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Power - Max
    150W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    1kV
  • Max Collector Current
    40A
  • Collector Emitter Breakdown Voltage
    1kV
  • Voltage - Collector Emitter Breakdown (Max)
    1000V
  • Collector Emitter Saturation Voltage
    3V
  • Turn On Time
    30 ns
  • Test Condition
    800V, 20A, 47 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    3V @ 15V, 20A
  • Turn Off Time-Nom (toff)
    700 ns
  • IGBT Type
    PT
  • Gate Charge
    73nC
  • Current - Collector Pulsed (Icm)
    80A
  • Td (on/off) @ 25°C
    30ns/350ns
  • Switching Energy
    3.5mJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    5V
  • Fall Time-Max (tf)
    700ns
  • RoHS Status
    ROHS3 Compliant
Description
IXGT20N100 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGT20N100 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGT20N100. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXGT20N100 More Descriptions
Trans IGBT Chip N-CH 1KV 40A 3-Pin(2 Tab) TO-268
IGBT 1000V 40A 150W TO268
Contact for details
Product Comparison
The three parts on the right have similar specifications to IXGT20N100.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Subcategory
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Element Configuration
    Case Connection
    Input Type
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    RoHS Status
    Lead Free
    Additional Feature
    Reverse Recovery Time
    Radiation Hardening
    Terminal Position
    Configuration
    View Compare
  • IXGT20N100
    IXGT20N100
    IXYS
    8 Weeks
    Surface Mount
    Surface Mount
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
    4.500005g
    SILICON
    -55°C~150°C TJ
    Tube
    2000
    e3
    yes
    Active
    1 (Unlimited)
    2
    PURE TIN
    Insulated Gate BIP Transistors
    150W
    GULL WING
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    IXG*20N100
    3
    R-PSSO-G2
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    150W
    POWER CONTROL
    N-CHANNEL
    1kV
    40A
    1kV
    1000V
    3V
    30 ns
    800V, 20A, 47 Ω, 15V
    3V @ 15V, 20A
    700 ns
    PT
    73nC
    80A
    30ns/350ns
    3.5mJ (off)
    20V
    5V
    700ns
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
  • IXGT24N170A
    IXGT24N170A
    IXYS
    24 Weeks
    Surface Mount
    Surface Mount
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
    4.500005g
    SILICON
    -55°C~150°C TJ
    Tube
    2004
    e3
    yes
    Active
    1 (Unlimited)
    2
    Matte Tin (Sn)
    Insulated Gate BIP Transistors
    250W
    GULL WING
    NOT SPECIFIED
    -
    NOT SPECIFIED
    IXG*24N170
    4
    R-PSSO-G2
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    250W
    POWER CONTROL
    N-CHANNEL
    1.7kV
    24A
    1.7kV
    1700V
    4.5V
    98 ns
    850V, 24A, 10 Ω, 15V
    6V @ 15V, 16A
    275 ns
    NPT
    140nC
    75A
    21ns/336ns
    2.97mJ (on), 790μJ (off)
    20V
    5V
    80ns
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    IXGT20N100 vs IXGT24N170A
  • IXGT24N170AH1
    IXGT24N170AH1
    IXYS
    25 Weeks
    Surface Mount
    Surface Mount
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
    6.500007g
    SILICON
    -55°C~150°C TJ
    Tube
    2009
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    Matte Tin (Sn)
    Insulated Gate BIP Transistors
    250W
    GULL WING
    -
    -
    -
    IXG*24N170
    4
    R-PSSO-G2
    -
    1
    Single
    COLLECTOR
    Standard
    250W
    POWER CONTROL
    N-CHANNEL
    1.7kV
    24A
    1.7kV
    1700V
    6V
    54 ns
    850V, 24A, 10 Ω, 15V
    6V @ 15V, 16A
    456 ns
    NPT
    140nC
    75A
    21ns/336ns
    2.97mJ (on), 790μJ (off)
    20V
    5V
    80ns
    RoHS Compliant
    -
    LOW CONDUCTION LOSS
    200 ns
    No
    -
    -
    IXGT20N100 vs IXGT24N170AH1
  • IXGT4N250C
    IXGT4N250C
    IXYS
    18 Weeks
    Surface Mount
    Surface Mount
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
    -
    SILICON
    -55°C~150°C TJ
    Tube
    2011
    e3
    -
    Active
    1 (Unlimited)
    2
    Matte Tin (Sn)
    Insulated Gate BIP Transistors
    150W
    GULL WING
    -
    unknown
    -
    -
    4
    R-PSSO-G2
    Not Qualified
    1
    -
    COLLECTOR
    Standard
    150W
    POWER CONTROL
    N-CHANNEL
    6V
    13A
    2.5kV
    2500V
    -
    -
    1250V, 4A, 20 Ω, 15V
    6V @ 15V, 4A
    471 ns
    NPT
    57nC
    46A
    -/350ns
    360μJ (off)
    20V
    5V
    -
    ROHS3 Compliant
    -
    -
    -
    -
    SINGLE
    SINGLE
    IXGT20N100 vs IXGT4N250C
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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