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IXGT15N120BD1

IXYS IXGT15N120BD1

Part Number:
IXGT15N120BD1
Manufacturer:
IXYS
Ventron No:
3072129-IXGT15N120BD1
Description:
IGBT 1200V 30A 150W TO268
ECAD Model:
Datasheet:
IXGT15N120BD1

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Specifications
IXYS IXGT15N120BD1 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGT15N120BD1.
  • Factory Lead Time
    8 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
  • Number of Pins
    3
  • Weight
    4.500005g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2000
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    150W
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    IXG*15N120
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Turn On Delay Time
    25 ns
  • Power - Max
    150W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Turn-Off Delay Time
    150 ns
  • Collector Emitter Voltage (VCEO)
    1.2kV
  • Max Collector Current
    30A
  • Reverse Recovery Time
    40 ns
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Turn On Time
    43 ns
  • Test Condition
    960V, 15A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    3.2V @ 15V, 15A
  • Turn Off Time-Nom (toff)
    630 ns
  • Gate Charge
    69nC
  • Current - Collector Pulsed (Icm)
    60A
  • Td (on/off) @ 25°C
    25ns/150ns
  • Switching Energy
    1.75mJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    5V
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IXGT15N120BD1 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGT15N120BD1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGT15N120BD1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXGT15N120BD1 More Descriptions
Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(2 Tab) TO-268AA
IGBT 1200V 30A 150W TO268
new, original packaged
Product Comparison
The three parts on the right have similar specifications to IXGT15N120BD1.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Subcategory
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Element Configuration
    Case Connection
    Input Type
    Turn On Delay Time
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    RoHS Status
    Lead Free
    Reach Compliance Code
    Collector Emitter Saturation Voltage
    IGBT Type
    Fall Time-Max (tf)
    Height
    Length
    Width
    View Compare
  • IXGT15N120BD1
    IXGT15N120BD1
    IXYS
    8 Weeks
    Surface Mount
    Surface Mount
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
    3
    4.500005g
    SILICON
    -55°C~150°C TJ
    Tube
    2000
    e3
    yes
    Active
    1 (Unlimited)
    2
    Matte Tin (Sn)
    Insulated Gate BIP Transistors
    150W
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    IXG*15N120
    3
    R-PSSO-G2
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    25 ns
    150W
    POWER CONTROL
    N-CHANNEL
    150 ns
    1.2kV
    30A
    40 ns
    1.2kV
    1200V
    43 ns
    960V, 15A, 10 Ω, 15V
    3.2V @ 15V, 15A
    630 ns
    69nC
    60A
    25ns/150ns
    1.75mJ (off)
    20V
    5V
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
  • IXGT20N120BD1
    IXGT20N120BD1
    IXYS
    8 Weeks
    Surface Mount
    Surface Mount
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
    -
    4.500005g
    SILICON
    -55°C~150°C TJ
    Bulk
    2003
    e3
    yes
    Active
    1 (Unlimited)
    2
    Matte Tin (Sn)
    -
    190W
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    IXG*20N120
    4
    R-PSSO-G2
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    -
    190W
    POWER CONTROL
    N-CHANNEL
    -
    1.2kV
    40A
    40 ns
    1.2kV
    1200V
    43 ns
    960V, 20A, 10 Ω, 15V
    3.4V @ 15V, 20A
    630 ns
    72nC
    100A
    25ns/150ns
    2.1mJ (off)
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    IXGT15N120BD1 vs IXGT20N120BD1
  • IXGT20N100
    IXGT20N100
    IXYS
    8 Weeks
    Surface Mount
    Surface Mount
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
    -
    4.500005g
    SILICON
    -55°C~150°C TJ
    Tube
    2000
    e3
    yes
    Active
    1 (Unlimited)
    2
    PURE TIN
    Insulated Gate BIP Transistors
    150W
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    IXG*20N100
    3
    R-PSSO-G2
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    -
    150W
    POWER CONTROL
    N-CHANNEL
    -
    1kV
    40A
    -
    1kV
    1000V
    30 ns
    800V, 20A, 47 Ω, 15V
    3V @ 15V, 20A
    700 ns
    73nC
    80A
    30ns/350ns
    3.5mJ (off)
    20V
    5V
    ROHS3 Compliant
    -
    unknown
    3V
    PT
    700ns
    -
    -
    -
    IXGT15N120BD1 vs IXGT20N100
  • IXGT40N120B2D1
    IXGT40N120B2D1
    IXYS
    8 Weeks
    Surface Mount
    Surface Mount
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
    3
    4.500005g
    SILICON
    -55°C~150°C TJ
    Tube
    2008
    e3
    yes
    Active
    1 (Unlimited)
    2
    PURE TIN
    Insulated Gate BIP Transistors
    380W
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    IXG*40N120
    4
    R-PSSO-G2
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    -
    380W
    POWER CONTROL
    N-CHANNEL
    -
    1.2kV
    75A
    100 ns
    1.2kV
    1200V
    79 ns
    960V, 40A, 2 Ω, 15V
    3.5V @ 15V, 40A
    770 ns
    138nC
    200A
    21ns/290ns
    4.5mJ (on), 3mJ (off)
    20V
    5V
    ROHS3 Compliant
    -
    unknown
    -
    PT
    270ns
    5.1mm
    16.05mm
    14mm
    IXGT15N120BD1 vs IXGT40N120B2D1
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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