IXYS IXGT20N120BD1
- Part Number:
- IXGT20N120BD1
- Manufacturer:
- IXYS
- Ventron No:
- 3554879-IXGT20N120BD1
- Description:
- IGBT 1200V 40A 190W TO268
- Datasheet:
- IXGT20N120BD1
IXYS IXGT20N120BD1 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGT20N120BD1.
- Factory Lead Time8 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-268-3, D3Pak (2 Leads Tab), TO-268AA
- Weight4.500005g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published2003
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- Terminal FinishMatte Tin (Sn)
- Max Power Dissipation190W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberIXG*20N120
- Pin Count4
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Power - Max190W
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)1.2kV
- Max Collector Current40A
- Reverse Recovery Time40 ns
- Collector Emitter Breakdown Voltage1.2kV
- Voltage - Collector Emitter Breakdown (Max)1200V
- Turn On Time43 ns
- Test Condition960V, 20A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic3.4V @ 15V, 20A
- Turn Off Time-Nom (toff)630 ns
- Gate Charge72nC
- Current - Collector Pulsed (Icm)100A
- Td (on/off) @ 25°C25ns/150ns
- Switching Energy2.1mJ (off)
- RoHS StatusROHS3 Compliant
IXGT20N120BD1 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGT20N120BD1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGT20N120BD1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGT20N120BD1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGT20N120BD1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXGT20N120BD1 More Descriptions
Trans IGBT Chip N-CH 1.2KV 40A 3-Pin(2 Tab) TO-268
IGBT 1200V 40A 190W TO268
IGBT 1200V 40A 190W TO268
The three parts on the right have similar specifications to IXGT20N120BD1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsElement ConfigurationCase ConnectionInput TypePower - MaxTransistor ApplicationPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Turn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)Gate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyRoHS StatusSubcategoryReach Compliance CodeCollector Emitter Saturation VoltageIGBT TypeGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxFall Time-Max (tf)Terminal PositionConfigurationView Compare
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IXGT20N120BD18 WeeksSurface MountSurface MountTO-268-3, D3Pak (2 Leads Tab), TO-268AA4.500005gSILICON-55°C~150°C TJBulk2003e3yesActive1 (Unlimited)2Matte Tin (Sn)190WGULL WINGNOT SPECIFIEDNOT SPECIFIEDIXG*20N1204R-PSSO-G2Not Qualified1SingleCOLLECTORStandard190WPOWER CONTROLN-CHANNEL1.2kV40A40 ns1.2kV1200V43 ns960V, 20A, 10 Ω, 15V3.4V @ 15V, 20A630 ns72nC100A25ns/150ns2.1mJ (off)ROHS3 Compliant----------
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8 WeeksSurface MountSurface MountTO-268-3, D3Pak (2 Leads Tab), TO-268AA4.500005gSILICON-55°C~150°C TJTube2000e3yesActive1 (Unlimited)2PURE TIN150WGULL WINGNOT SPECIFIEDNOT SPECIFIEDIXG*20N1003R-PSSO-G2Not Qualified1SingleCOLLECTORStandard150WPOWER CONTROLN-CHANNEL1kV40A-1kV1000V30 ns800V, 20A, 47 Ω, 15V3V @ 15V, 20A700 ns73nC80A30ns/350ns3.5mJ (off)ROHS3 CompliantInsulated Gate BIP Transistorsunknown3VPT20V5V700ns--
-
18 WeeksSurface MountSurface MountTO-268-3, D3Pak (2 Leads Tab), TO-268AA-SILICON-55°C~150°C TJTube2011e3-Active1 (Unlimited)2Matte Tin (Sn)150WGULL WING---4R-PSSO-G2Not Qualified1-COLLECTORStandard150WPOWER CONTROLN-CHANNEL6V13A-2.5kV2500V-1250V, 4A, 20 Ω, 15V6V @ 15V, 4A471 ns57nC46A-/350ns360μJ (off)ROHS3 CompliantInsulated Gate BIP Transistorsunknown-NPT20V5V-SINGLESINGLE
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8 WeeksSurface MountSurface MountTO-268-3, D3Pak (2 Leads Tab), TO-268AA4.500005gSILICON-55°C~150°C TJTube2002e3yesActive1 (Unlimited)2Matte Tin (Sn)150WGULL WINGNOT SPECIFIEDNOT SPECIFIEDIXG*20N1204R-PSSO-G2Not Qualified1SingleCOLLECTORStandard150WMOTOR CONTROLN-CHANNEL1.2kV40A-1.2kV1200V57 ns800V, 20A, 47 Ω, 15V2.5V @ 15V, 20A1250 ns63nC80A28ns/400ns6.5mJ (off)ROHS3 Compliant-not_compliant-------
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