IXYS IXGT20N120
- Part Number:
- IXGT20N120
- Manufacturer:
- IXYS
- Ventron No:
- 2496723-IXGT20N120
- Description:
- IGBT 1200V 40A 150W TO268
- Datasheet:
- IXGT20N120
IXYS IXGT20N120 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGT20N120.
- Factory Lead Time8 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-268-3, D3Pak (2 Leads Tab), TO-268AA
- Weight4.500005g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2002
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- Terminal FinishMatte Tin (Sn)
- Max Power Dissipation150W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberIXG*20N120
- Pin Count4
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Power - Max150W
- Transistor ApplicationMOTOR CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)1.2kV
- Max Collector Current40A
- Collector Emitter Breakdown Voltage1.2kV
- Voltage - Collector Emitter Breakdown (Max)1200V
- Turn On Time57 ns
- Test Condition800V, 20A, 47 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 20A
- Turn Off Time-Nom (toff)1250 ns
- Gate Charge63nC
- Current - Collector Pulsed (Icm)80A
- Td (on/off) @ 25°C28ns/400ns
- Switching Energy6.5mJ (off)
- RoHS StatusROHS3 Compliant
IXGT20N120 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGT20N120 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGT20N120. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGT20N120 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGT20N120. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXGT20N120 More Descriptions
Trans IGBT Chip N-CH 1.2KV 40A 3-Pin(2 Tab) TO-268
IGBT 1200V 40A 150W TO268
IGBT 1200V 40A 150W TO268
The three parts on the right have similar specifications to IXGT20N120.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsElement ConfigurationCase ConnectionInput TypePower - MaxTransistor ApplicationPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Turn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)Gate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyRoHS StatusReverse Recovery TimeAdditional FeatureSubcategoryCollector Emitter Saturation VoltageIGBT TypeGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxFall Time-Max (tf)Radiation HardeningTerminal PositionConfigurationView Compare
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IXGT20N1208 WeeksSurface MountSurface MountTO-268-3, D3Pak (2 Leads Tab), TO-268AA4.500005gSILICON-55°C~150°C TJTube2002e3yesActive1 (Unlimited)2Matte Tin (Sn)150WGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIEDIXG*20N1204R-PSSO-G2Not Qualified1SingleCOLLECTORStandard150WMOTOR CONTROLN-CHANNEL1.2kV40A1.2kV1200V57 ns800V, 20A, 47 Ω, 15V2.5V @ 15V, 20A1250 ns63nC80A28ns/400ns6.5mJ (off)ROHS3 Compliant------------
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8 WeeksSurface MountSurface MountTO-268-3, D3Pak (2 Leads Tab), TO-268AA4.500005gSILICON-55°C~150°C TJBulk2003e3yesActive1 (Unlimited)2Matte Tin (Sn)190WGULL WINGNOT SPECIFIED-NOT SPECIFIEDIXG*20N1204R-PSSO-G2Not Qualified1SingleCOLLECTORStandard190WPOWER CONTROLN-CHANNEL1.2kV40A1.2kV1200V43 ns960V, 20A, 10 Ω, 15V3.4V @ 15V, 20A630 ns72nC100A25ns/150ns2.1mJ (off)ROHS3 Compliant40 ns----------
-
25 WeeksSurface MountSurface MountTO-268-3, D3Pak (2 Leads Tab), TO-268AA6.500007gSILICON-55°C~150°C TJTube2009e3yesObsolete1 (Unlimited)2Matte Tin (Sn)250WGULL WING---IXG*24N1704R-PSSO-G2-1SingleCOLLECTORStandard250WPOWER CONTROLN-CHANNEL1.7kV24A1.7kV1700V54 ns850V, 24A, 10 Ω, 15V6V @ 15V, 16A456 ns140nC75A21ns/336ns2.97mJ (on), 790μJ (off)RoHS Compliant200 nsLOW CONDUCTION LOSSInsulated Gate BIP Transistors6VNPT20V5V80nsNo--
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18 WeeksSurface MountSurface MountTO-268-3, D3Pak (2 Leads Tab), TO-268AA-SILICON-55°C~150°C TJTube2011e3-Active1 (Unlimited)2Matte Tin (Sn)150WGULL WING-unknown--4R-PSSO-G2Not Qualified1-COLLECTORStandard150WPOWER CONTROLN-CHANNEL6V13A2.5kV2500V-1250V, 4A, 20 Ω, 15V6V @ 15V, 4A471 ns57nC46A-/350ns360μJ (off)ROHS3 Compliant--Insulated Gate BIP Transistors-NPT20V5V--SINGLESINGLE
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