IXYS IXGT24N170AH1

Name: IXGT24N170AH1
Brand: IXYS
SKU: 2496826-IXGT24N170AH1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IXGT24N170AH1

Manufacturer:: IXYS

Ventron No:: 2496826-IXGT24N170AH1

Description:: IGBT 1700V 24A 250W TO268

ECAD Model:

Datasheet:: IXGT24N170AH1

Specifications

IXYS IXGT24N170AH1 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGT24N170AH1.

Factory Lead Time
25 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-268-3, D3Pak (2 Leads Tab), TO-268AA
Weight
6.500007g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2009
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
Matte Tin (Sn)
Additional Feature
LOW CONDUCTION LOSS
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
250W
Terminal Form
GULL WING
Base Part Number
IXG*24N170
Pin Count
4
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
250W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
1.7kV
Max Collector Current
24A
Reverse Recovery Time
200 ns
Collector Emitter Breakdown Voltage
1.7kV
Voltage - Collector Emitter Breakdown (Max)
1700V
Collector Emitter Saturation Voltage
6V
Turn On Time
54 ns
Test Condition
850V, 24A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
6V @ 15V, 16A
Turn Off Time-Nom (toff)
456 ns
IGBT Type
NPT
Gate Charge
140nC
Current - Collector Pulsed (Icm)
75A
Td (on/off) @ 25°C
21ns/336ns
Switching Energy
2.97mJ (on), 790μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5V
Fall Time-Max (tf)
80ns
Radiation Hardening
No
RoHS Status
RoHS Compliant

Description

IXGT24N170AH1 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGT24N170AH1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGT24N170AH1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

IXGT24N170AH1 More Descriptions

Trans IGBT Chip N-CH 1.7KV 24A
IGBT 1700V 24A 250W TO268
IGBT 24A 1700V TO-268
Product Description Demo for Development.
new, original packaged

Product Comparison

The three parts on the right have similar specifications to IXGT24N170AH1.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Additional Feature

Subcategory

Max Power Dissipation

Terminal Form

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Element Configuration

Case Connection

Input Type

Power - Max

Transistor Application

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Collector Emitter Saturation Voltage

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

IGBT Type

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Fall Time-Max (tf)

Radiation Hardening

RoHS Status

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Number of Pins

Turn On Delay Time

Turn-Off Delay Time

Lead Free

Reach Compliance Code

Height

Length

Width

View Compare
IXGT24N170AH1

IXYS

25 Weeks

Surface Mount

Surface Mount

TO-268-3, D3Pak (2 Leads Tab), TO-268AA

6.500007g

SILICON

-55°C~150°C TJ

Tube

2009

e3

yes

Obsolete

1 (Unlimited)

2

Matte Tin (Sn)

LOW CONDUCTION LOSS

Insulated Gate BIP Transistors

250W

GULL WING

IXG*24N170

4

R-PSSO-G2

1

Single

COLLECTOR

Standard

250W

POWER CONTROL

N-CHANNEL

1.7kV

24A

200 ns

1.7kV

1700V

6V

54 ns

850V, 24A, 10 Ω, 15V

6V @ 15V, 16A

456 ns

NPT

140nC

75A

21ns/336ns

2.97mJ (on), 790μJ (off)

20V

5V

80ns

No

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-
IXGT20N120BD1

IXYS

8 Weeks

Surface Mount

Surface Mount

TO-268-3, D3Pak (2 Leads Tab), TO-268AA

4.500005g

SILICON

-55°C~150°C TJ

Bulk

2003

e3

yes

Active

1 (Unlimited)

2

Matte Tin (Sn)

-

-

190W

GULL WING

IXG*20N120

4

R-PSSO-G2

1

Single

COLLECTOR

Standard

190W

POWER CONTROL

N-CHANNEL

1.2kV

40A

40 ns

1.2kV

1200V

-

43 ns

960V, 20A, 10 Ω, 15V

3.4V @ 15V, 20A

630 ns

-

72nC

100A

25ns/150ns

2.1mJ (off)

-

-

-

-

ROHS3 Compliant

NOT SPECIFIED

NOT SPECIFIED

Not Qualified

-

-

-

-

-

-

-

-

IXGT24N170AH1 vs IXGT20N120BD1
IXGT15N120BD1

IXYS

8 Weeks

Surface Mount

Surface Mount

TO-268-3, D3Pak (2 Leads Tab), TO-268AA

4.500005g

SILICON

-55°C~150°C TJ

Tube

2000

e3

yes

Active

1 (Unlimited)

2

Matte Tin (Sn)

-

Insulated Gate BIP Transistors

150W

GULL WING

IXG*15N120

3

R-PSSO-G2

1

Single

COLLECTOR

Standard

150W

POWER CONTROL

N-CHANNEL

1.2kV

30A

40 ns

1.2kV

1200V

-

43 ns

960V, 15A, 10 Ω, 15V

3.2V @ 15V, 15A

630 ns

-

69nC

60A

25ns/150ns

1.75mJ (off)

20V

5V

-

-

ROHS3 Compliant

NOT SPECIFIED

NOT SPECIFIED

Not Qualified

3

25 ns

150 ns

Lead Free

-

-

-

-

IXGT24N170AH1 vs IXGT15N120BD1
IXGT40N120B2D1

IXYS

8 Weeks

Surface Mount

Surface Mount

TO-268-3, D3Pak (2 Leads Tab), TO-268AA

4.500005g

SILICON

-55°C~150°C TJ

Tube

2008

e3

yes

Active

1 (Unlimited)

2

PURE TIN

-

Insulated Gate BIP Transistors

380W

GULL WING

IXG*40N120

4

R-PSSO-G2

1

Single

COLLECTOR

Standard

380W

POWER CONTROL

N-CHANNEL

1.2kV

75A

100 ns

1.2kV

1200V

-

79 ns

960V, 40A, 2 Ω, 15V

3.5V @ 15V, 40A

770 ns

PT

138nC

200A

21ns/290ns

4.5mJ (on), 3mJ (off)

20V

5V

270ns

-

ROHS3 Compliant

NOT SPECIFIED

NOT SPECIFIED

Not Qualified

3

-

-

-

unknown

5.1mm

16.05mm

14mm

IXGT24N170AH1 vs IXGT40N120B2D1