IXFH32N50Q

IXYS IXFH32N50Q

Part Number:
IXFH32N50Q
Manufacturer:
IXYS
Ventron No:
2490080-IXFH32N50Q
Description:
MOSFET N-CH 500V 30A TO-247AD
ECAD Model:
Datasheet:
IXF(H,T)30N50Q, 32N50Q

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Specifications
IXYS IXFH32N50Q technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFH32N50Q.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    HiPerFET™
  • Published
    2001
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Resistance
    160mOhm
  • Additional Feature
    AVALANCHE RATED
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Pin Count
    3
  • Number of Elements
    1
  • Power Dissipation-Max
    360W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    416W
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    160m Ω @ 16A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 4mA
  • Input Capacitance (Ciss) (Max) @ Vds
    4925pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    32A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    190nC @ 10V
  • Rise Time
    42ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    20 ns
  • Turn-Off Delay Time
    75 ns
  • Continuous Drain Current (ID)
    32A
  • JEDEC-95 Code
    TO-247AD
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    500V
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
IXFH32N50Q Overview
A device's maximal input capacitance is 4925pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 32A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 75 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (10V).

IXFH32N50Q Features
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns


IXFH32N50Q Applications
There are a lot of IXYS
IXFH32N50Q applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
IXFH32N50Q More Descriptions
Trans MOSFET N-CH 500V 32A 3-Pin (3 Tab) TO-247AD
MOSFET N-CH 500V 30A TO-247AD
Contact for details
Product Comparison
The three parts on the right have similar specifications to IXFH32N50Q.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Resistance
    Additional Feature
    Subcategory
    Technology
    Pin Count
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Radiation Hardening
    RoHS Status
    Lead Free
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Factory Lead Time
    JESD-609 Code
    ECCN Code
    Terminal Finish
    Turn On Delay Time
    Threshold Voltage
    Height
    Length
    Width
    REACH SVHC
    Drain to Source Voltage (Vdss)
    DS Breakdown Voltage-Min
    View Compare
  • IXFH32N50Q
    IXFH32N50Q
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™
    2001
    yes
    Obsolete
    1 (Unlimited)
    3
    160mOhm
    AVALANCHE RATED
    FET General Purpose Power
    MOSFET (Metal Oxide)
    3
    1
    360W Tc
    Single
    ENHANCEMENT MODE
    416W
    DRAIN
    N-Channel
    SWITCHING
    160m Ω @ 16A, 10V
    4.5V @ 4mA
    4925pF @ 25V
    32A Tc
    190nC @ 10V
    42ns
    10V
    ±20V
    20 ns
    75 ns
    32A
    TO-247AD
    20V
    500V
    No
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXFH23N80Q
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™
    2004
    yes
    Active
    1 (Unlimited)
    3
    -
    -
    -
    MOSFET (Metal Oxide)
    3
    1
    500W Tc
    Single
    ENHANCEMENT MODE
    500W
    DRAIN
    N-Channel
    -
    420m Ω @ 500mA, 10V
    4.5V @ 3mA
    4900pF @ 25V
    23A Tc
    130nC @ 10V
    27ns
    10V
    ±30V
    14 ns
    74 ns
    23A
    TO-247AD
    30V
    800V
    -
    ROHS3 Compliant
    -
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    Not Qualified
    0.4Ohm
    92A
    1500 mJ
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXFH170N10P
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~175°C TJ
    Tube
    HiPerFET™, PolarP2™
    2006
    yes
    Active
    1 (Unlimited)
    3
    9MOhm
    AVALANCHE RATED
    FET General Purpose Power
    MOSFET (Metal Oxide)
    3
    1
    715W Tc
    Single
    ENHANCEMENT MODE
    714W
    DRAIN
    N-Channel
    SWITCHING
    9m Ω @ 500mA, 10V
    5V @ 4mA
    6000pF @ 25V
    170A Tc
    198nC @ 10V
    50ns
    10V
    ±20V
    33 ns
    90 ns
    170A
    TO-247AD
    20V
    100V
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    2000 mJ
    30 Weeks
    e1
    EAR99
    Tin/Silver/Copper (Sn/Ag/Cu)
    35 ns
    5V
    21.46mm
    16.26mm
    5.3mm
    No SVHC
    -
    -
  • IXFH14N60P3
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™, Polar3™
    2011
    -
    Active
    1 (Unlimited)
    3
    -
    AVALANCHE RATED
    FET General Purpose Power
    MOSFET (Metal Oxide)
    3
    1
    327W Tc
    Single
    ENHANCEMENT MODE
    -
    DRAIN
    N-Channel
    SWITCHING
    540m Ω @ 7A, 10V
    5V @ 1mA
    1480pF @ 25V
    14A Tc
    25nC @ 10V
    -
    10V
    ±30V
    -
    43 ns
    14A
    TO-247AD
    30V
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    0.54Ohm
    -
    700 mJ
    24 Weeks
    -
    -
    -
    21 ns
    -
    21.46mm
    16.26mm
    5.3mm
    -
    600V
    600V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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