IXYS IXFH32N50Q
- Part Number:
- IXFH32N50Q
- Manufacturer:
- IXYS
- Ventron No:
- 2490080-IXFH32N50Q
- Description:
- MOSFET N-CH 500V 30A TO-247AD
- Datasheet:
- IXF(H,T)30N50Q, 32N50Q
IXYS IXFH32N50Q technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFH32N50Q.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHiPerFET™
- Published2001
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Resistance160mOhm
- Additional FeatureAVALANCHE RATED
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Pin Count3
- Number of Elements1
- Power Dissipation-Max360W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation416W
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs160m Ω @ 16A, 10V
- Vgs(th) (Max) @ Id4.5V @ 4mA
- Input Capacitance (Ciss) (Max) @ Vds4925pF @ 25V
- Current - Continuous Drain (Id) @ 25°C32A Tc
- Gate Charge (Qg) (Max) @ Vgs190nC @ 10V
- Rise Time42ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)20 ns
- Turn-Off Delay Time75 ns
- Continuous Drain Current (ID)32A
- JEDEC-95 CodeTO-247AD
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage500V
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
IXFH32N50Q Overview
A device's maximal input capacitance is 4925pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 32A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 75 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (10V).
IXFH32N50Q Features
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
IXFH32N50Q Applications
There are a lot of IXYS
IXFH32N50Q applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 4925pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 32A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 75 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (10V).
IXFH32N50Q Features
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
IXFH32N50Q Applications
There are a lot of IXYS
IXFH32N50Q applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
IXFH32N50Q More Descriptions
Trans MOSFET N-CH 500V 32A 3-Pin (3 Tab) TO-247AD
MOSFET N-CH 500V 30A TO-247AD
Contact for details
MOSFET N-CH 500V 30A TO-247AD
Contact for details
The three parts on the right have similar specifications to IXFH32N50Q.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsResistanceAdditional FeatureSubcategoryTechnologyPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageRadiation HardeningRoHS StatusLead FreePeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Qualification StatusDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Factory Lead TimeJESD-609 CodeECCN CodeTerminal FinishTurn On Delay TimeThreshold VoltageHeightLengthWidthREACH SVHCDrain to Source Voltage (Vdss)DS Breakdown Voltage-MinView Compare
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IXFH32N50QThrough HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubeHiPerFET™2001yesObsolete1 (Unlimited)3160mOhmAVALANCHE RATEDFET General Purpose PowerMOSFET (Metal Oxide)31360W TcSingleENHANCEMENT MODE416WDRAINN-ChannelSWITCHING160m Ω @ 16A, 10V4.5V @ 4mA4925pF @ 25V32A Tc190nC @ 10V42ns10V±20V20 ns75 ns32ATO-247AD20V500VNoRoHS CompliantLead Free--------------------
-
Through HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubeHiPerFET™2004yesActive1 (Unlimited)3---MOSFET (Metal Oxide)31500W TcSingleENHANCEMENT MODE500WDRAINN-Channel-420m Ω @ 500mA, 10V4.5V @ 3mA4900pF @ 25V23A Tc130nC @ 10V27ns10V±30V14 ns74 ns23ATO-247AD30V800V-ROHS3 Compliant-NOT SPECIFIEDunknownNOT SPECIFIEDNot Qualified0.4Ohm92A1500 mJ------------
-
Through HoleThrough HoleTO-247-33SILICON-55°C~175°C TJTubeHiPerFET™, PolarP2™2006yesActive1 (Unlimited)39MOhmAVALANCHE RATEDFET General Purpose PowerMOSFET (Metal Oxide)31715W TcSingleENHANCEMENT MODE714WDRAINN-ChannelSWITCHING9m Ω @ 500mA, 10V5V @ 4mA6000pF @ 25V170A Tc198nC @ 10V50ns10V±20V33 ns90 ns170ATO-247AD20V100VNoROHS3 CompliantLead Free------2000 mJ30 Weekse1EAR99Tin/Silver/Copper (Sn/Ag/Cu)35 ns5V21.46mm16.26mm5.3mmNo SVHC--
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Through HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubeHiPerFET™, Polar3™2011-Active1 (Unlimited)3-AVALANCHE RATEDFET General Purpose PowerMOSFET (Metal Oxide)31327W TcSingleENHANCEMENT MODE-DRAINN-ChannelSWITCHING540m Ω @ 7A, 10V5V @ 1mA1480pF @ 25V14A Tc25nC @ 10V-10V±30V-43 ns14ATO-247AD30V--ROHS3 Compliant-----0.54Ohm-700 mJ24 Weeks---21 ns-21.46mm16.26mm5.3mm-600V600V
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