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IRLR9343TRPBF

Infineon Technologies IRLR9343TRPBF

Part Number:
IRLR9343TRPBF
Manufacturer:
Infineon Technologies
Ventron No:
2479570-IRLR9343TRPBF
Description:
MOSFET P-CH 55V 20A DPAK
ECAD Model:
Datasheet:
IRLR9343TRPBF

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Specifications
Infineon Technologies IRLR9343TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLR9343TRPBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -40°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2004
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    93MOhm
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    79W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    79W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    9.5 ns
  • FET Type
    P-Channel
  • Transistor Application
    AMPLIFIER
  • Rds On (Max) @ Id, Vgs
    105m Ω @ 3.4A, 10V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    660pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    20A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    47nC @ 10V
  • Rise Time
    24ns
  • Drain to Source Voltage (Vdss)
    55V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    9.5 ns
  • Turn-Off Delay Time
    21 ns
  • Continuous Drain Current (ID)
    -20A
  • JEDEC-95 Code
    TO-252AA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -55V
  • Pulsed Drain Current-Max (IDM)
    60A
  • Height
    2.3876mm
  • Length
    6.7056mm
  • Width
    6.22mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRLR9343TRPBF Description

IRLR9343TRPBF is a P-channel digital audio MOSFET. The Digital Audio HEXFET? IRLR9343TRPBF is specifically designed for Class-D audio amplifier applications. This Infineon IRLR9343TRPBF MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.
These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.

IRLR9343TRPBF Features

Multiple Package Options
Advanced Process Technology
Key Parameters Optimized for Class-D Audio Amplifier Applications

Lead-Free
175°C Operating Junction Temperature for Ruggedness
Repetitive Avalanche Capability for Robustness and Reliability
Low RDSON for Improved Efficiency
Low Qg and Qsw for Better THD and Improved Efficiency
Low Qrr for Better THD and Lower EMI

IRLR9343TRPBF Applications

Television sets and home-theatre systems.
High volume consumer electronics
Headphone amplifiers
Mobile technology
Automotive
IRLR9343TRPBF More Descriptions
MOSFET, P-CHANNEL, -55V, -20A, 105 MOHM, 31 NC QG, LOGIC LEVEL, D-PAK
Trans MOSFET P-CH Si 55V 20A 3-Pin(2 Tab) DPAK T/R / MOSFET P-CH 55V 20A DPAK
Single P-Channel 55 V 93 mOhm 31 nC HEXFET® Power Mosfet - TO-252-3
-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-55V; Continuous Drain Current, Id:-20A; On Resistance, Rds(on):105mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:DPAK ;RoHS Compliant: Yes
Power Field-Effect Transistor, 20A I(D), 55V, 0.105ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Product Comparison
The three parts on the right have similar specifications to IRLR9343TRPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Current Rating
    Threshold Voltage
    Dual Supply Voltage
    Avalanche Energy Rating (Eas)
    Recovery Time
    Nominal Vgs
    REACH SVHC
    Surface Mount
    Configuration
    Drain Current-Max (Abs) (ID)
    Supplier Device Package
    View Compare
  • IRLR9343TRPBF
    IRLR9343TRPBF
    Infineon Technologies
    12 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -40°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    e3
    Active
    1 (Unlimited)
    2
    EAR99
    93MOhm
    Matte Tin (Sn) - with Nickel (Ni) barrier
    MOSFET (Metal Oxide)
    GULL WING
    260
    30
    R-PSSO-G2
    1
    79W Tc
    Single
    ENHANCEMENT MODE
    79W
    DRAIN
    9.5 ns
    P-Channel
    AMPLIFIER
    105m Ω @ 3.4A, 10V
    1V @ 250μA
    660pF @ 50V
    20A Tc
    47nC @ 10V
    24ns
    55V
    4.5V 10V
    ±20V
    9.5 ns
    21 ns
    -20A
    TO-252AA
    20V
    -55V
    60A
    2.3876mm
    6.7056mm
    6.22mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLR2703PBF
    IRLR2703PBF
    Infineon Technologies
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2003
    e3
    Discontinued
    1 (Unlimited)
    2
    EAR99
    45mOhm
    Matte Tin (Sn) - with Nickel (Ni) barrier
    MOSFET (Metal Oxide)
    GULL WING
    260
    30
    R-PSSO-G2
    1
    45W Tc
    Single
    ENHANCEMENT MODE
    38W
    DRAIN
    8.5 ns
    N-Channel
    SWITCHING
    45m Ω @ 14A, 10V
    1V @ 250μA
    450pF @ 25V
    23A Tc
    15nC @ 4.5V
    140ns
    -
    4V 10V
    ±16V
    20 ns
    12 ns
    23A
    TO-252AA
    16V
    30V
    96A
    2.39mm
    6.73mm
    6.22mm
    No
    ROHS3 Compliant
    Lead Free
    AVALANCHE RATED
    FET General Purpose Power
    30V
    23A
    1V
    30V
    77 mJ
    97 ns
    1 V
    No SVHC
    -
    -
    -
    -
    IRLR9343TRPBF vs IRLR2703PBF
  • IRLR014NTRR
    IRLR014NTRR
    Infineon Technologies
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2001
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    28W Tc
    -
    ENHANCEMENT MODE
    -
    -
    -
    N-Channel
    -
    140m Ω @ 6A, 10V
    1V @ 250μA
    265pF @ 25V
    10A Tc
    7.9nC @ 5V
    -
    55V
    4.5V 10V
    ±16V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    FET General Purpose Power
    -
    -
    -
    -
    -
    -
    -
    -
    YES
    Single
    10A
    -
    IRLR9343TRPBF vs IRLR014NTRR
  • IRLR3103TRR
    IRLR3103TRR
    Infineon Technologies
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    1998
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    107W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    19mOhm @ 33A, 10V
    1V @ 250μA
    1600pF @ 25V
    55A Tc
    50nC @ 4.5V
    -
    30V
    4.5V 10V
    ±16V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    D-Pak
    IRLR9343TRPBF vs IRLR3103TRR
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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