Infineon Technologies IRLR8726TRPBF

Name: IRLR8726TRPBF
Brand: Infineon Technologies
SKU: 2484954-IRLR8726TRPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRLR8726TRPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2484954-IRLR8726TRPBF

Description:: MOSFET N-CH 30V 86A DPAK

ECAD Model:

Datasheet:: IRLR8726TRPBF

Specifications

Infineon Technologies IRLR8726TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLR8726TRPBF.

Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2007
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
75W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
75W
Case Connection
DRAIN
Turn On Delay Time
12 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
5.8m Ω @ 25A, 10V
Vgs(th) (Max) @ Id
2.35V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds
2150pF @ 15V
Current - Continuous Drain (Id) @ 25°C
86A Tc
Gate Charge (Qg) (Max) @ Vgs
23nC @ 4.5V
Rise Time
49ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
16 ns
Turn-Off Delay Time
15 ns
Continuous Drain Current (ID)
86A
JEDEC-95 Code
TO-252AA
Gate to Source Voltage (Vgs)
12V
Drain-source On Resistance-Max
0.058Ohm
Drain to Source Breakdown Voltage
30V
Height
2.3876mm
Length
6.7056mm
Width
6.22mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

IRLR8726TRPBF Description

IRLR8726TRPBF belongs to the family of HEXFET? power MOSFETs that are manufactured by Infineon Technologies. Due to its high quality and reliable performance of ultralow gate impedance and RDS (on) at 4.5 V, it is well suited for high-frequency synchronous buck converters for processor power and high-frequency isolated DC-DC converters with synchronous rectfication for telecom and industrial use.

IRLR8726TRPBF Features

Available in the D-Pak package
Drain-to-source voltage of 30 V
Ultralow gate impedance and RDS (on)
Operating junction temperature of -55 °C to 175 °C

IRLR8726TRPBF Applications

High-frequency synchronous buck converters
High-frequency isolated DC-DC converters with synchronous rectification

IRLR8726TRPBF More Descriptions

Single N-Channel 30 V 5.8 mOhm 23 nC HEXFET® Power Mosfet - TO-252-3
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
N CH POWER MOSFET, HEXFET, 30A, 86A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:86A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V ;RoHS Compliant: Yes
Power Field-Effect Transistor, 86A I(D), 30V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: Very Low RDS(on) at 4.5V VGS; Ultra-Low Gate Impedance; Fully Characterized Avalanche Voltage and Current; Lead-Free; RoHS compliant
MOSFET, N-CH, 30V, 86A, TO-252AA; Transistor Polarity: N Channel; Continuous Drain Current Id: 86A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.004ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 75W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 86 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 5.8 / Gate-Source Voltage V = 20 / Fall Time ns = 16 / Rise Time ns = 49 / Turn-OFF Delay Time ns = 15 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 75

Product Comparison

The three parts on the right have similar specifications to IRLR8726TRPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Height

Length

Width

Radiation Hardening

RoHS Status

Resistance

Additional Feature

Voltage - Rated DC

Current Rating

Element Configuration

Threshold Voltage

Dual Supply Voltage

Nominal Vgs

REACH SVHC

Lead Free

Surface Mount

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Pbfree Code

Reach Compliance Code

Pin Count

Qualification Status

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

View Compare
IRLR8726TRPBF

Infineon Technologies

12 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2007

e3

Active

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

30

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

75W Tc

ENHANCEMENT MODE

75W

DRAIN

12 ns

N-Channel

SWITCHING

5.8m Ω @ 25A, 10V

2.35V @ 50μA

2150pF @ 15V

86A Tc

23nC @ 4.5V

49ns

4.5V 10V

±20V

16 ns

15 ns

86A

TO-252AA

12V

0.058Ohm

30V

2.3876mm

6.7056mm

6.22mm

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRLR3105PBF

Infineon Technologies

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2008

e3

Discontinued

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

FET General Purpose Power

MOSFET (Metal Oxide)

-

GULL WING

260

30

R-PSSO-G2

1

-

57W Tc

ENHANCEMENT MODE

57W

DRAIN

8 ns

N-Channel

SWITCHING

37m Ω @ 15A, 10V

3V @ 250μA

710pF @ 25V

25A Tc

20nC @ 5V

57ns

5V 10V

±16V

37 ns

25 ns

25A

TO-252AA

16V

-

55V

2.39mm

6.73mm

6.223mm

No

ROHS3 Compliant

37mOhm

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

55V

25A

Single

3V

55V

3 V

No SVHC

Lead Free

-

-

-

-

-

-

-

-

-

-

IRLR8726TRPBF vs IRLR3105PBF
IRLR014NTRR

Infineon Technologies

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2001

-

Obsolete

1 (Unlimited)

-

-

-

FET General Purpose Power

MOSFET (Metal Oxide)

-

-

-

-

-

-

Single

28W Tc

ENHANCEMENT MODE

-

-

-

N-Channel

-

140m Ω @ 6A, 10V

1V @ 250μA

265pF @ 25V

10A Tc

7.9nC @ 5V

-

4.5V 10V

±16V

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

YES

55V

10A

-

-

-

-

-

-

-

IRLR8726TRPBF vs IRLR014NTRR
IRLR130ATM

Fairchild/ON Semiconductor

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

-

e3

Obsolete

1 (Unlimited)

2

-

MATTE TIN

-

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

NOT SPECIFIED

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

2.5W Ta 46W Tc

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

120m Ω @ 6.5A, 5V

2V @ 250μA

755pF @ 25V

13A Tc

24nC @ 5V

-

5V

±20V

-

-

-

-

-

0.12Ohm

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

YES

100V

13A

yes

unknown

3

COMMERCIAL

45A

100V

225 mJ

IRLR8726TRPBF vs IRLR130ATM

Certification

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IRLR8726TRPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRLR8726TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 86A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	4000	1 $0.1464
IRLR8726TRPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 30V 86A DPAK RoHS: Compliant	1995	1 $0.63 10 $0.532 100 $0.4044 500 $0.30244 1000 $0.23872
IRLR8726TRPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 30V 86A DPAK RoHS: Compliant	1995	1 $0.63 10 $0.532 100 $0.4044 500 $0.30244 1000 $0.23872
IRLR8726TRPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 30V 86A DPAK RoHS: Compliant	0	2000 $0.21319
IRLR8726TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 86A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	6000	2000 $0.1316
IRLR8726TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 86A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	4000	56 $0.1464
IRLR8726TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 86A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	4000	64 $0.3098 100 $0.2703 200 $0.2397 500 $0.2231
IRLR8726TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 86A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	1667	38 $0.6613
IRLR8726TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 86A 3-Pin(2 Tab) DPAK T/R - RoHS: Compliant	2000	2000 $0.1289 4000 $0.1249 8000 $0.1199 12000 $0.1159 20000 $0.1139
IRLR8726TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 86A 3-Pin(2 Tab) DPAK T/R (A RoHS: Compliant	0	2000 $0.1399 4000 $0.1399 8000 $0.1349 12000 $0.1299 20000 $0.1249
IRLR8726TRPBF DISTI #	Infineon Technologies AG	MOSFET, N-CH, 30V, 86A, TO-252AA, Transistor Pola	1830	1 $0.537 10 $0.452 25 $0.398 50 $0.343 100 $0.289 250 $0.269 500 $0.251 1000 $0.231
IRLR8726TRPBF DISTI #	Infineon Technologies AG	IRLR8726TRPBF N-channel MOSFET Transistor, 86 A, RoHS: Compliant	0	40 $0.68
IRLR8726TRPBF DISTI #	Infineon Technologies AG	MOSFET 30V 1 N-CH HEXFET 5.8mOhms 15nC RoHS: Compliant	316	1 $0.49 10 $0.407 100 $0.248 1000 $0.192 2000 $0.164 10000 $0.152 24000 $0.144 50000 $0.141
IRLR8726TRPBF DISTI #	Infineon Technologies AG	MOSFET N-CHANNEL HEXFET 30V 86A D-PAK, RL	1960	80 $0.237 400 $0.179 800 $0.149 2000 $0.119
IRLR8726TRPBF DISTI #	Infineon Technologies AG	N-LogL 30V 86A 75W 0,0058R TO252AA RoHS: Compliant	1950	50 $0.22 100 $0.18 500 $0.16 3000 $0.154
IRLR8726TRPBF DISTI #	Infineon Technologies AG	INSTOCK	3452
IRLR8726TRPBF DISTI #	Infineon Technologies AG	MOSFET, N-CH, 30V, 86A, TO-252AA RoHS: Compliant	1830	1 $0.966 10 $0.808 100 $0.606 500 $0.444 1000 $0.343
IRLR8726TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 86A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	4000	10 $0.316 50 $0.245 100 $0.214
IRLR8726TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 86A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	1667	10 $0.529 50 $0.353 100 $0.288
IRLR8726TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 86A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	6000	2000 $0.236
IRLR8726TRPBF DISTI #	Infineon Technologies AG	MOSFET, N-CH, 30V, 86A, TO-252AA RoHS: Compliant	2050	5 $0.314 25 $0.253 100 $0.191 250 $0.176 500 $0.162
IRLR8726TRPBF DISTI #	Infineon Technologies AG	30V,5.8m,86A,N-Channel Power MOSFET	3150	1 $0.26 100 $0.22 500 $0.2 1000 $0.19
IRLR8726TRPBF DISTI #	INFINEON/IR	D-PAK (TO-252) RoHS: Compliant	10080	4000 $0.1714 10080 $0.16

IRLR872~~(13)~~
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IRLR8~~(56)~~
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IRL~~(58)~~

Infineon Technologies IRLR8726TRPBF

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