Infineon Technologies IRLR8103VPBF

Name: IRLR8103VPBF
Brand: Infineon Technologies
SKU: 2487565-IRLR8103VPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRLR8103VPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2487565-IRLR8103VPBF

Description:: MOSFET N-CH 30V 91A DPAK

ECAD Model:

Datasheet:: IRLR8103VPBF

Specifications

Infineon Technologies IRLR8103VPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLR8103VPBF.

Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
HEXFET®
Published
2004
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Resistance
9mOhm
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Current Rating
89A
Number of Elements
1
Power Dissipation-Max
115W Tc
Element Configuration
Single
Power Dissipation
89W
Turn On Delay Time
10 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
9m Ω @ 15A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2672pF @ 16V
Current - Continuous Drain (Id) @ 25°C
91A Tc
Gate Charge (Qg) (Max) @ Vgs
27nC @ 5V
Rise Time
9ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
18 ns
Turn-Off Delay Time
24 ns
Continuous Drain Current (ID)
91A
Threshold Voltage
3V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Dual Supply Voltage
30V
Nominal Vgs
3 V
Height
2.3876mm
Length
6.7056mm
Width
6.22mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead, Lead Free

Description

IRLR8103VPBF Overview
A device's maximal input capacitance is 2672pF @ 16V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 91A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 24 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3V threshold voltage.This device reduces its overall power consumption by using drive voltage (4.5V 10V).

IRLR8103VPBF Features
a continuous drain current (ID) of 91A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 24 ns
a threshold voltage of 3V

IRLR8103VPBF Applications
There are a lot of Infineon Technologies
IRLR8103VPBF applications of single MOSFETs transistors.

Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples

IRLR8103VPBF More Descriptions

Benefits: RoHS Compliant; Industry-leading quality; Fully Avalanche Rated; Logic Level
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
MOSFET, 30V, 89A, 9 MOHM, 27 NC QG, LOGIC LEVEL, D-PAK
Power Field-Effect Transistor, 91A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N, 30V, 89A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:91A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:115W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:89A; Junction to Case Thermal Resistance A:1.4°C/W; On State resistance @ Vgs = 10V:9mohm; Package / Case:DPAK; Power Dissipation Pd:115W; Power Dissipation Pd:115W; Pulse Current Idm:363A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V; Voltage Vgs th Min:1V

Product Comparison

The three parts on the right have similar specifications to IRLR8103VPBF.

Image

Part Number

Manufacturer

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Resistance

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Power Dissipation-Max

Element Configuration

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Transistor Element Material

JESD-609 Code

Number of Terminations

Terminal Finish

Additional Feature

Subcategory

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Operating Mode

Case Connection

Transistor Application

JEDEC-95 Code

Supplier Device Package

Drain to Source Voltage (Vdss)

Surface Mount

Pbfree Code

Terminal Position

Reach Compliance Code

Pin Count

Qualification Status

Configuration

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

View Compare
IRLR8103VPBF

Infineon Technologies

Tin

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

-55°C~150°C TJ

Tube

HEXFET®

2004

Discontinued

1 (Unlimited)

EAR99

9mOhm

30V

MOSFET (Metal Oxide)

89A

1

115W Tc

Single

89W

10 ns

N-Channel

9m Ω @ 15A, 10V

3V @ 250μA

2672pF @ 16V

91A Tc

27nC @ 5V

9ns

4.5V 10V

±20V

18 ns

24 ns

91A

3V

20V

30V

30V

3 V

2.3876mm

6.7056mm

6.22mm

No SVHC

No

ROHS3 Compliant

Contains Lead, Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRLR3105PBF

Infineon Technologies

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

-55°C~175°C TJ

Tube

HEXFET®

2008

Discontinued

1 (Unlimited)

EAR99

37mOhm

55V

MOSFET (Metal Oxide)

25A

1

57W Tc

Single

57W

8 ns

N-Channel

37m Ω @ 15A, 10V

3V @ 250μA

710pF @ 25V

25A Tc

20nC @ 5V

57ns

5V 10V

±16V

37 ns

25 ns

25A

3V

16V

55V

55V

3 V

2.39mm

6.73mm

6.223mm

No SVHC

No

ROHS3 Compliant

Lead Free

SILICON

e3

2

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

FET General Purpose Power

GULL WING

260

30

R-PSSO-G2

ENHANCEMENT MODE

DRAIN

SWITCHING

TO-252AA

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRLR8103VPBF vs IRLR3105PBF
IRLR3103TRR

Infineon Technologies

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

1998

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

-

107W Tc

-

-

-

N-Channel

19mOhm @ 33A, 10V

1V @ 250μA

1600pF @ 25V

55A Tc

50nC @ 4.5V

-

4.5V 10V

±16V

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

D-Pak

30V

-

-

-

-

-

-

-

-

-

-

-

-

IRLR8103VPBF vs IRLR3103TRR
IRLR130ATM

Fairchild/ON Semiconductor

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-55°C~150°C TJ

Tape & Reel (TR)

-

-

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

1

2.5W Ta 46W Tc

-

-

-

N-Channel

120m Ω @ 6.5A, 5V

2V @ 250μA

755pF @ 25V

13A Tc

24nC @ 5V

-

5V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

SILICON

e3

2

MATTE TIN

-

-

GULL WING

NOT SPECIFIED

NOT SPECIFIED

R-PSSO-G2

ENHANCEMENT MODE

DRAIN

SWITCHING

-

-

100V

YES

yes

SINGLE

unknown

3

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

13A

0.12Ohm

45A

100V

225 mJ

IRLR8103VPBF vs IRLR130ATM

Certification

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Part Number	Manufacturers	Description	Stock	Price
IRLR8103VPBF DISTI #IRLR8103VPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 91A 3-Pin(2 Tab) DPAK Tube RoHS: Compliant	5400	75 $1.2768 100 $0.9792 500 $0.863 1000 $0.6816 2500 $0.6038
IRLR8103VPBF DISTI #IRLR8103VPBF	Infineon Technologies AG	MOSFET N-CH 30V 91A DPAK RoHS: Compliant	0
IRLR8103VTRPBF DISTI #IRLR8103VTRPBF	Infineon Technologies AG	MOSFET N-CH 30V 91A DPAK RoHS: Compliant	0	6000 $0.52302
IRLR8103VPBF DISTI #IRLR8103VPBF	Infineon Technologies AG	MOSFET, 30V, 89A, 9 MOHM, 27 NC QG, LOGIC LEV RoHS: Compliant	0	6000 $1.6 12000 $1.568 30000 $1.52 60000 $1.456 150000 $1.36
IRLR8103VPBF DISTI #IRLR8103VPBF	International Rectifier	Power Field-Effect Transistor, 91A I(D), 30V, 0.01 RoHS: Compliant	8800	1 $0.79 25 $0.74 100 $0.71 500 $0.68 1000 $0.65
IRLR8103VPBF DISTI #IRLR8103VPBF	Infineon Technologies AG	MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC RoHS: Compliant	2137	1 $1.56 10 $1.33 100 $1.02 500 $0.899 1000 $0.71
IRLR8103VPBF DISTI #IRLR8103VPBF	International Rectifier	RoHS: Compliant	150
IRLR8103VPBF DISTI #IRLR8103VPBF	Infineon Technologies AG	MOSFET, N, 30V, 89A, D-PAK RoHS: Compliant	2154	5 $0.416 25 $0.378 100 $0.33 250 $0.329 500 $0.328
IRLR8103VPBF DISTI #IRLR8103VPBF	Infineon Technologies AG	MOSFET, N, 30V, 89A, D-PAK RoHS: Compliant	2154	1 $2.47 10 $2.1 100 $1.62 500 $1.42 1000 $1.13 2500 $0.996

Infineon Technologies IRLR8103VPBF

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