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IRLR7833PBF

Infineon Technologies IRLR7833PBF

Part Number:
IRLR7833PBF
Manufacturer:
Infineon Technologies
Ventron No:
3071687-IRLR7833PBF
Description:
MOSFET N-CH 30V 140A DPAK
ECAD Model:
Datasheet:
IRLR7833PBF

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Specifications
Infineon Technologies IRLR7833PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLR7833PBF.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2004
  • JESD-609 Code
    e3
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    140W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    4.5m Ω @ 15A, 10V
  • Vgs(th) (Max) @ Id
    2.3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4010pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    140A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    50nC @ 4.5V
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • JEDEC-95 Code
    TO-252AA
  • Drain Current-Max (Abs) (ID)
    30A
  • Drain-source On Resistance-Max
    0.0045Ohm
  • Pulsed Drain Current-Max (IDM)
    560A
  • DS Breakdown Voltage-Min
    30V
  • Avalanche Energy Rating (Eas)
    530 mJ
  • RoHS Status
    ROHS3 Compliant
Description
IRLR7833PBF Description
IRLR7833PBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a drain to source voltage of 30V. The operating temperature of the IRLR7833PBF is -55??C~175??C TJ and its maximum power dissipation is 140W Tc. IRLR7833PBF has 2 pins and it is available in Tube packaging way.

IRLR7833PBF Features
Very Low RDS(on) at 4.5V VGS
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage and Current

IRLR7833PBF Applications
High Frequency Synchronous Buck Converters for Computer Processor Power
High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use
Lead-Free
IRLR7833PBF More Descriptions
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.6Milliohms;ID 140A;D-Pak (TO-252AA);VF 1V
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
Power Field-Effect Transistor, 30A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level
MOSFET, N, LOGIC, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:140A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; Power Dissipation Pd:140W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:140A; Package / Case:DPAK; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:560A; SMD Marking:IRLR7833; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:2.3V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to IRLR7833PBF.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    RoHS Status
    Mount
    Number of Pins
    Resistance
    Additional Feature
    Voltage - Rated DC
    Current Rating
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Lead Free
    Supplier Device Package
    View Compare
  • IRLR7833PBF
    IRLR7833PBF
    Infineon Technologies
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2004
    e3
    Discontinued
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    FET General Purpose Power
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    260
    30
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    140W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    4.5m Ω @ 15A, 10V
    2.3V @ 250μA
    4010pF @ 15V
    140A Tc
    50nC @ 4.5V
    30V
    4.5V 10V
    ±20V
    TO-252AA
    30A
    0.0045Ohm
    560A
    30V
    530 mJ
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLR3105PBF
    IRLR3105PBF
    Infineon Technologies
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2008
    e3
    Discontinued
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    GULL WING
    260
    30
    R-PSSO-G2
    -
    1
    -
    57W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    37m Ω @ 15A, 10V
    3V @ 250μA
    710pF @ 25V
    25A Tc
    20nC @ 5V
    -
    5V 10V
    ±16V
    TO-252AA
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Surface Mount
    3
    37mOhm
    AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
    55V
    25A
    Single
    57W
    8 ns
    57ns
    37 ns
    25 ns
    25A
    3V
    16V
    55V
    55V
    3 V
    2.39mm
    6.73mm
    6.223mm
    No SVHC
    No
    Lead Free
    -
    IRLR7833PBF vs IRLR3105PBF
  • IRLR014NTRR
    IRLR014NTRR
    Infineon Technologies
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2001
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    Single
    28W Tc
    ENHANCEMENT MODE
    -
    N-Channel
    -
    140m Ω @ 6A, 10V
    1V @ 250μA
    265pF @ 25V
    10A Tc
    7.9nC @ 5V
    55V
    4.5V 10V
    ±16V
    -
    10A
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRLR7833PBF vs IRLR014NTRR
  • IRLR3103TRR
    IRLR3103TRR
    Infineon Technologies
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    1998
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    107W Tc
    -
    -
    N-Channel
    -
    19mOhm @ 33A, 10V
    1V @ 250μA
    1600pF @ 25V
    55A Tc
    50nC @ 4.5V
    30V
    4.5V 10V
    ±16V
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    D-Pak
    IRLR7833PBF vs IRLR3103TRR
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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