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Infineon Technologies IRLR3705ZTRPBF
- Part Number:
- IRLR3705ZTRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2849083-IRLR3705ZTRPBF
- Description:
- MOSFET N-CH 55V 42A DPAK
- ECAD Model:
-
- Datasheet:
- IRLR3705ZTRPBF
Infineon Technologies IRLR3705ZTRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLR3705ZTRPBF.
- Factory Lead Time12 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2006
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance8MOhm
- Additional FeatureHIGH RELIABILITY
- SubcategoryFET General Purpose Power
- Voltage - Rated DC55V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating42A
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Power Dissipation-Max130W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation130W
- Case ConnectionDRAIN
- Turn On Delay Time17 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs8m Ω @ 42A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2900pF @ 25V
- Current - Continuous Drain (Id) @ 25°C42A Tc
- Gate Charge (Qg) (Max) @ Vgs66nC @ 5V
- Rise Time150ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±16V
- Fall Time (Typ)70 ns
- Turn-Off Delay Time33 ns
- Continuous Drain Current (ID)89A
- Threshold Voltage3V
- JEDEC-95 CodeTO-252AA
- Gate to Source Voltage (Vgs)16V
- Drain to Source Breakdown Voltage55V
- Dual Supply Voltage55V
- Recovery Time42 ns
- Nominal Vgs3 V
- Height2.2606mm
- Length6.7056mm
- Width6.22mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead, Lead Free
IRLR3705ZTRPBF Description
The incredibly low on-resistance per silicon area of this HEXFET? Power MOSFET is made possible by the use of cutting-edge manufacturing processes. A 175°C junction operating temperature, quick switching, and increased repeating avalanche rating are other characteristics of this design. These characteristics work together to provide a highly effective and dependable gadget that may be used in a wide range of applications.
IRLR3705ZTRPBF Features
Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
IRLR3705ZTRPBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
The incredibly low on-resistance per silicon area of this HEXFET? Power MOSFET is made possible by the use of cutting-edge manufacturing processes. A 175°C junction operating temperature, quick switching, and increased repeating avalanche rating are other characteristics of this design. These characteristics work together to provide a highly effective and dependable gadget that may be used in a wide range of applications.
IRLR3705ZTRPBF Features
Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
IRLR3705ZTRPBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
IRLR3705ZTRPBF More Descriptions
Single N-Channel 55 V 12 mOhm 66 nC HEXFET® Power Mosfet - TO-252AA
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
N CHANNEL MOSFET, 55V, 42A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current, Id:42mA; Drain Source Voltage, Vds:55V; On Resistance, Rds(on):0.08ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1V ;RoHS Compliant: Yes
Power Field-Effect Transistor, 42A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N CH, 55V, 42A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 42A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.0065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 130W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 42 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 8 / Gate-Source Voltage V = 16 / Fall Time ns = 70 / Rise Time ns = 150 / Turn-OFF Delay Time ns = 33 / Turn-ON Delay Time ns = 17 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 130
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
N CHANNEL MOSFET, 55V, 42A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current, Id:42mA; Drain Source Voltage, Vds:55V; On Resistance, Rds(on):0.08ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1V ;RoHS Compliant: Yes
Power Field-Effect Transistor, 42A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N CH, 55V, 42A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 42A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.0065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 130W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 42 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 8 / Gate-Source Voltage V = 16 / Fall Time ns = 70 / Rise Time ns = 150 / Turn-OFF Delay Time ns = 33 / Turn-ON Delay Time ns = 17 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 130
The three parts on the right have similar specifications to IRLR3705ZTRPBF.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceAdditional FeatureSubcategoryVoltage - Rated DCTechnologyTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageRecovery TimeNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountTerminal FinishTerminal PositionQualification StatusConfigurationDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Supplier Device PackagePbfree CodeReach Compliance CodePin CountView Compare
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IRLR3705ZTRPBF12 WeeksTinSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~175°C TJTape & Reel (TR)HEXFET®2006e3Active1 (Unlimited)2SMD/SMTEAR998MOhmHIGH RELIABILITYFET General Purpose Power55VMOSFET (Metal Oxide)GULL WING26042A30R-PSSO-G21130W TcSingleENHANCEMENT MODE130WDRAIN17 nsN-ChannelSWITCHING8m Ω @ 42A, 10V3V @ 250μA2900pF @ 25V42A Tc66nC @ 5V150ns4.5V 10V±16V70 ns33 ns89A3VTO-252AA16V55V55V42 ns3 V2.2606mm6.7056mm6.22mmNo SVHCNoROHS3 CompliantContains Lead, Lead Free---------------- -
---Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-SILICON-55°C~175°C TJTubeHEXFET®1998e0Obsolete1 (Unlimited)2-EAR99-AVALANCHE RATED, LOGIC LEVEL COMPATIBLE--MOSFET (Metal Oxide)GULL WING245-30R-PSSO-G21107W Tc-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING19m Ω @ 33A, 10V1V @ 250μA1600pF @ 25V55A Tc50nC @ 4.5V-4.5V 10V±16V----TO-252AA----------Non-RoHS Compliant-YESTin/Lead (Sn/Pb)SINGLENot QualifiedSINGLE WITH BUILT-IN DIODE30V20A0.019Ohm220A30V240 mJ----
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---Surface MountTO-252-3, DPak (2 Leads Tab), SC-63---55°C~175°C TJTape & Reel (TR)HEXFET®1998-Obsolete1 (Unlimited)-------MOSFET (Metal Oxide)------107W Tc-----N-Channel-19mOhm @ 33A, 10V1V @ 250μA1600pF @ 25V55A Tc50nC @ 4.5V-4.5V 10V±16V---------------Non-RoHS Compliant------30V-----D-Pak---
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---Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-SILICON-55°C~150°C TJTape & Reel (TR)--e3Obsolete1 (Unlimited)2------MOSFET (Metal Oxide)GULL WINGNOT SPECIFIED-NOT SPECIFIEDR-PSSO-G212.5W Ta 46W Tc-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING120m Ω @ 6.5A, 5V2V @ 250μA755pF @ 25V13A Tc24nC @ 5V-5V±20V---------------ROHS3 Compliant-YESMATTE TINSINGLECOMMERCIALSINGLE WITH BUILT-IN DIODE100V13A0.12Ohm45A100V225 mJ-yesunknown3
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