Infineon Technologies IRLR3410PBF

Name: IRLR3410PBF
Brand: Infineon Technologies
SKU: 2479651-IRLR3410PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRLR3410PBF

Manufacturer:: Infineon Technologies

Ventron No:: 2479651-IRLR3410PBF

Description:: MOSFET N-CH 100V 17A DPAK

ECAD Model:

Datasheet:: IRLR3410PBF

Specifications

Infineon Technologies IRLR3410PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLR3410PBF.

Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
1998
JESD-609 Code
e3
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
AVALANCHE RATED, ULTRA LOW RESISTANCE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
79W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
105m Ω @ 10A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
800pF @ 25V
Current - Continuous Drain (Id) @ 25°C
17A Tc
Gate Charge (Qg) (Max) @ Vgs
34nC @ 5V
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
4V 10V
Vgs (Max)
±16V
JEDEC-95 Code
TO-252AA
Drain Current-Max (Abs) (ID)
17A
Drain-source On Resistance-Max
0.125Ohm
Pulsed Drain Current-Max (IDM)
60A
DS Breakdown Voltage-Min
100V
Avalanche Energy Rating (Eas)
150 mJ
RoHS Status
ROHS3 Compliant

Description

IRLR3410PBF Description The IRLR3410PBF power MOSFETs are designed with proven silicon processes to provide designers with a wide range of options to support a variety of applications including DC motors, inverters, solar power systems, lighting, load switches, and battery-powered applications. The IRLR3410PBF is available in a variety of surface mount and through-hole packages with industry-standard footprints. This IRLR3410PBF is a 100V single-channel HEXFET? Power MOSFET, fifth generation HEXFET that utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area. In addition to these advantages, the HEXFET power MOSFET is well known for its fast switching speed and rugged construction, which makes it an excellent device for devices used in a wide range of applications. With the D-PAK, surface mounting can be accomplished using the vapor phase, infrared, or wave soldering techniques. It is possible for surface mount devices to dissipate power levels as high as 1.5W.
IRLR3410PBF Features Planar cell structure for wide SOA
Industry-standard surface-mount power package
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100KHz
IRLR3410PBF Applications Power Management
Industrial uses
Domestic uses
Low Power Standby or Bias Voltage Supplies
Industrial Process Control, Metering, and Security Systems
High-Efficiency Replacement for High Voltage Linear Regulators

IRLR3410PBF More Descriptions

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.105Ohm;ID 17A;D-Pak (TO-252AA);PD 79W
On a Reel of 3000, IRLR3410TRLPBF N-Channel MOSFET, 17 A, 100 V HEXFET, 3-Pin DPAK Infineon
Single N-Channel 100 V 155 mOhm 34 nC HEXFET® Power Mosfet - TO-252AA
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
MOSFET, N, 100V, 15A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:100V; On Resistance Rds(on):105mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:79W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:17A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:2.4°C/W; On State resistance @ Vgs = 10V:105mohm; Package / Case:DPAK; Power Dissipation Pd:79W; Power Dissipation Pd:79W; Pulse Current Idm:60A; SMD Marking:IRLR3410; Termination Type:SMD; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V

Product Comparison

The three parts on the right have similar specifications to IRLR3410PBF.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Mount

Number of Pins

Resistance

Voltage - Rated DC

Current Rating

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

Lead Free

Supplier Device Package

Input Capacitance

Rds On Max

Pbfree Code

Reach Compliance Code

Pin Count

View Compare
IRLR3410PBF

Infineon Technologies

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~175°C TJ

Tube

HEXFET®

1998

e3

Discontinued

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, ULTRA LOW RESISTANCE

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

30

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

79W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

105m Ω @ 10A, 10V

2V @ 250μA

800pF @ 25V

17A Tc

34nC @ 5V

100V

4V 10V

±16V

TO-252AA

17A

0.125Ohm

60A

100V

150 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRLR3105PBF

Infineon Technologies

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2008

e3

Discontinued

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

FET General Purpose Power

MOSFET (Metal Oxide)

-

GULL WING

260

30

R-PSSO-G2

-

1

-

57W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

37m Ω @ 15A, 10V

3V @ 250μA

710pF @ 25V

25A Tc

20nC @ 5V

-

5V 10V

±16V

TO-252AA

-

-

-

-

-

ROHS3 Compliant

Surface Mount

3

37mOhm

55V

25A

Single

57W

8 ns

57ns

37 ns

25 ns

25A

3V

16V

55V

55V

3 V

2.39mm

6.73mm

6.223mm

No SVHC

No

Lead Free

-

-

-

-

-

-

IRLR3410PBF vs IRLR3105PBF
IRLR024TRR

Vishay Siliconix

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

1997

-

Active

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

2.5W Ta 42W Tc

-

-

N-Channel

-

100mOhm @ 8.4A, 5V

2V @ 250μA

870pF @ 25V

14A Tc

18nC @ 5V

60V

4V 5V

±10V

-

-

-

-

-

-

Non-RoHS Compliant

Surface Mount

-

-

-

-

-

-

-

-

-

-

14A

-

-

-

-

-

-

-

-

-

-

-

D-Pak

870pF

100 mΩ

-

-

-

IRLR3410PBF vs IRLR024TRR
IRLR130ATM

Fairchild/ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

-

e3

Obsolete

1 (Unlimited)

2

-

MATTE TIN

-

-

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

NOT SPECIFIED

R-PSSO-G2

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

2.5W Ta 46W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

120m Ω @ 6.5A, 5V

2V @ 250μA

755pF @ 25V

13A Tc

24nC @ 5V

100V

5V

±20V

-

13A

0.12Ohm

45A

100V

225 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

yes

unknown

3

IRLR3410PBF vs IRLR130ATM

Certification

Related parts for IRLR3410PBF

IRLR120TRRPBF

Vishay Siliconix

MOSFET N-CH 100V 7.7A DPAK
IRLR2705TRRPBF

Infineon Technologies

MOSFET N-CH 55V 28A DPAK
IRLR2703PBF

Infineon Technologies

MOSFET N-CH 30V 23A DPAK
IRLR3105PBF

Infineon Technologies

MOSFET N-CH 55V 25A DPAK
IRLR3103

Infineon Technologies

MOSFET N-CH 30V 55A DPAK
IRLR014NTRR

Infineon Technologies

MOSFET N-CH 55V 10A DPAK
IRLR3103TRR

Infineon Technologies

MOSFET N-CH 30V 55A DPAK
IRLR024TRR

Vishay Siliconix

MOSFET N-CH 60V 14A DPAK
IRLR130ATM

Fairchild/ON Semiconductor

MOSFET N-CH 100V 13A DPAK
IRLR024TR

Vishay Siliconix

MOSFET N-CH 60V 14A DPAK

Popular Search Part Number Related Keywords Search Tags

IRLR3410PBF Price
IRLR3410PBF Picture
IRLR3410PBF Buy
IRLR3410PBF Distributor
IRLR3410PBF Image
IRLR3410PBF Inquiry
IRLR3410PBF Manufacturer
IRLR3410PBF Part
IRLR3410PBF Description
IRLR3410PBF Technical Data
IRLR3410PBF Stock
IRLR3410PBF Wholesales
IRLR3410PBF PDF
IRLR3410PBF Inventory
IRLR3410PBF Supplier
IRLR3410PBF Datasheet
IRLR3410PBF Rfq
IRLR3410PBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRLR3410PBF DISTI #IRLR3410PBF	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 17A 3-Pin(2 Tab) DPAK Tu RoHS: Compliant	468	1 $0.7105 10 $0.4734 100 $0.3806 500 $0.3557 1000 $0.3453 3000 $0.323
IRLR3410TRPBF DISTI #IRLR3410TRPBF	Infineon Technologies AG	MOSFET N-CH 100V 17A DPAK RoHS: Compliant	17625	1 $1.14 10 $1.018 100 $0.8154 500 $0.6444 1000 $0.52004
IRLR3410TRPBF DISTI #IRLR3410TRPBF	Infineon Technologies AG	MOSFET N-CH 100V 17A DPAK RoHS: Compliant	17625	1 $1.14 10 $1.018 100 $0.8154 500 $0.6444 1000 $0.52004
IRLR3410TRPBF DISTI #IRLR3410TRPBF	Infineon Technologies AG	MOSFET N-CH 100V 17A DPAK RoHS: Compliant	16000	2000 $0.47471
IRLR3410PBF DISTI #IRLR3410PBF	Infineon Technologies AG	MOSFET N-CH 100V 17A DPAK RoHS: Compliant	966	1 $1.21 10 $1.082 100 $0.8664 500 $0.68424 1000 $0.55171
IRLR3410PBF DISTI #IRLR3410PBF	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 17A 3-Pin(2 Tab) DPAK Tu RoHS: Compliant	9975	3000 $0.3186 6000 $0.3071 12000 $0.2956 18000 $0.286 30000 $0.2802
IRLR3410PBF DISTI #IRLR3410PBF	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 17A 3-Pin(2 Tab) DPAK Tu RoHS: Compliant	468	22 $0.4734 100 $0.3806
IRLR3410PBF DISTI #IRLR3410PBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 17A 3-Pin(2 Tab) DPAK - Rai RoHS: Compliant	2277
IRLR3410PBF DISTI #IRLR3410PBF	Infineon Technologies AG	N CHANNEL MOSFET, 100V, 17A, D-PAK, Transistor Po	215	1 $0.992 10 $0.851 100 $0.667 500 $0.596 1000 $0.483 2500 $0.451 10000 $0.42
IRLR3410PBF. DISTI #IRLR3410PBF.	Infineon Technologies AG	N CHANNEL MOSFET, 100V, 17A, D-PAK, Transistor Po	0
IRLR3410PBF DISTI #IRLR3410PBF	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 100V, RDS(ON) 0.105O RoHS: Compliant	0	1200 $0.524
IRLR3410PBF DISTI #IRLR3410PBF	Infineon Technologies AG	MOSFET 100V 1 N-CH HEXFET 105mOhms 22.7nC RoHS: Compliant	1711	1 $0.95 10 $0.807 100 $0.62 500 $0.548 1000 $0.433
IRLR3410PBF DISTI #IRLR3410PBF	Infineon Technologies AG	MOSFET N-CHANNEL 100V 17A DPAK, EA	348	1 $2 10 $0.62 50 $0.57 100 $0.53 200 $0.49
IRLR3410PBF DISTI #IRLR3410PBF	Infineon Technologies AG	MOSFET N-CHANNEL 100V 17A DPAK, TU	2693	10 $0.62 50 $0.57 100 $0.53 200 $0.49
IRLR3410PBF DISTI #IRLR3410PBF	International Rectifier	17 A, 100 V, 0.125 OHM, N-CHANNEL, SI, POWER, MOSF	99	1 $0.88 7 $0.66 31 $0.44
IRLR3410PBF DISTI #IRLR3410PBF	Infineon Technologies AG	Transistor: N-MOSFET, unipolar, 100V, 15A, 52W	349	1 $0.67 3 $0.51 10 $0.43 75 $0.37
IRLR3410PBF DISTI #IRLR3410PBF	Infineon Technologies AG	N-LogL 100V 17A 79W 0,105R TO252AA RoHS: Compliant	1950	75 $0.3125 150 $0.2725 300 $0.2525 600 $0.243
IRLR3410TRPBF DISTI #IRLR3410TRPBF	Infineon Technologies AG	N-LogL 100V 17A 79W 0,105R TO252AA RoHS: Compliant	1450	50 $0.339 100 $0.299 500 $0.279 3000 $0.2685
IRLR3410PBF DISTI #IRLR3410PBF	Infineon Technologies AG	MOSFET, N, 100V, 15A, D-PAK RoHS: Compliant	805	1 $1.51 10 $1.29 100 $0.981 500 $0.868 1000 $0.686 3000 $0.608
IRLR3410PBF DISTI #IRLR3410PBF	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 17A 3-Pin(2 Tab) DPAK T/ RoHS: Compliant	399	10 $0.315 50 $0.294
IRLR3410PBF DISTI #IRLR3410PBF	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 17A 3-Pin(2 Tab) DPAK T/ RoHS: Compliant	468	10 $0.6297 100 $0.4575
IRLR3410PBF DISTI #IRLR3410PBF	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 17A 3-Pin(2 Tab) DPAK T/ RoHS: Compliant	10020	3000 $0.407
IRLR3410PBF DISTI #IRLR3410PBF	Infineon Technologies AG	MOSFET, N, 100V, 15A, D-PAK RoHS: Compliant	1076	5 $0.684 25 $0.4 100 $0.38 250 $0.37 500 $0.36

IRLR341~~(7)~~
IRLR34~~(7)~~
IRLR3~~(54)~~
IRLR~~(55)~~
IRL~~(58)~~

Infineon Technologies IRLR3410PBF

Quick Request Quote

TCA9548APWR Symbol, Features, Layout Guidelines and TCA9548APWR vs PCA9548APW-T

LM393M Comparator: Equivalents, Features and Layout Guidelines

An Introduction to the LM339AN Quad Voltage Comparator

TLP250 MOSFET IGBT Driver: Manufacturer, Footprint and Applications