Infineon Technologies IRLR3110ZPBF

Name: IRLR3110ZPBF
Brand: Infineon Technologies
SKU: 2484887-IRLR3110ZPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRLR3110ZPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2484887-IRLR3110ZPBF

Description:: MOSFET N-CH 100V 42A DPAK

ECAD Model:

Datasheet:: IRLR3110ZPBF

Specifications

Infineon Technologies IRLR3110ZPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLR3110ZPBF.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2006
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
14MOhm
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Power Dissipation-Max
140W Tc
Element Configuration
Single
Power Dissipation
140mW
Turn On Delay Time
24 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
14m Ω @ 38A, 10V
Vgs(th) (Max) @ Id
2.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
3980pF @ 25V
Current - Continuous Drain (Id) @ 25°C
42A Tc
Gate Charge (Qg) (Max) @ Vgs
48nC @ 4.5V
Rise Time
110ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±16V
Fall Time (Typ)
48 ns
Turn-Off Delay Time
33 ns
Continuous Drain Current (ID)
42A
Threshold Voltage
2.5V
Gate to Source Voltage (Vgs)
16V
Drain to Source Breakdown Voltage
100V
Dual Supply Voltage
100V
Recovery Time
51 ns
Nominal Vgs
2.5 V
Height
2.3876mm
Length
6.7056mm
Width
6.22mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRLR3110ZPBF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3980pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 42A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=100V. And this device has 100V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 33 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 24 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 16V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 2.5V threshold voltage. By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

IRLR3110ZPBF Features
a continuous drain current (ID) of 42A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 33 ns
a threshold voltage of 2.5V

IRLR3110ZPBF Applications
There are a lot of Infineon Technologies
IRLR3110ZPBF applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

IRLR3110ZPBF More Descriptions

MOSFET, N Ch., Automotive, 100V, 63A, 14 MOHM, 34 NC QG, D-PAK, Pb-Free | Infineon IRLR3110ZPBF
Single N-Channel 100 V 14 mOhm 34 nC HEXFET® Power Mosfet - TO-252AA
Trans MOSFET N-CH Si 100V 63A 3-Pin(2 Tab) DPAK Tube / MOSFET N-CH 100V 42A DPAK
MOSFET, N, 100V, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:100V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:140W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:3110; Current Id Max:42A; Package / Case:DPAK; Power Dissipation Pd:140W; Pulse Current Idm:250A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:16V; Voltage Vgs Rds on Measurement:10V

Product Comparison

The three parts on the right have similar specifications to IRLR3110ZPBF.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Termination

ECCN Code

Resistance

Technology

Number of Elements

Power Dissipation-Max

Element Configuration

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Recovery Time

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Transistor Element Material

JESD-609 Code

Number of Terminations

Terminal Finish

Additional Feature

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Operating Mode

Case Connection

Transistor Application

Drain to Source Voltage (Vdss)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Supplier Device Package

Pbfree Code

Reach Compliance Code

Pin Count

View Compare
IRLR3110ZPBF

Infineon Technologies

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

-55°C~175°C TJ

Tube

HEXFET®

2006

Discontinued

1 (Unlimited)

SMD/SMT

EAR99

14MOhm

MOSFET (Metal Oxide)

1

140W Tc

Single

140mW

24 ns

N-Channel

14m Ω @ 38A, 10V

2.5V @ 100μA

3980pF @ 25V

42A Tc

48nC @ 4.5V

110ns

4.5V 10V

±16V

48 ns

33 ns

42A

2.5V

16V

100V

100V

51 ns

2.5 V

2.3876mm

6.7056mm

6.22mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRLR3103

Infineon Technologies

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-55°C~175°C TJ

Tube

HEXFET®

1998

Obsolete

1 (Unlimited)

-

EAR99

-

MOSFET (Metal Oxide)

1

107W Tc

-

-

-

N-Channel

19m Ω @ 33A, 10V

1V @ 250μA

1600pF @ 25V

55A Tc

50nC @ 4.5V

-

4.5V 10V

±16V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

YES

SILICON

e0

2

Tin/Lead (Sn/Pb)

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

SINGLE

GULL WING

245

30

R-PSSO-G2

Not Qualified

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

30V

TO-252AA

20A

0.019Ohm

220A

30V

240 mJ

-

-

-

-

IRLR3110ZPBF vs IRLR3103
IRLR3103TRR

Infineon Technologies

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

1998

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

107W Tc

-

-

-

N-Channel

19mOhm @ 33A, 10V

1V @ 250μA

1600pF @ 25V

55A Tc

50nC @ 4.5V

-

4.5V 10V

±16V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

30V

-

-

-

-

-

-

D-Pak

-

-

-

IRLR3110ZPBF vs IRLR3103TRR
IRLR130ATM

Fairchild/ON Semiconductor

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-55°C~150°C TJ

Tape & Reel (TR)

-

-

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

1

2.5W Ta 46W Tc

-

-

-

N-Channel

120m Ω @ 6.5A, 5V

2V @ 250μA

755pF @ 25V

13A Tc

24nC @ 5V

-

5V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

YES

SILICON

e3

2

MATTE TIN

-

SINGLE

GULL WING

NOT SPECIFIED

NOT SPECIFIED

R-PSSO-G2

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

100V

-

13A

0.12Ohm

45A

100V

225 mJ

-

yes

unknown

3

IRLR3110ZPBF vs IRLR130ATM

Certification

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IRLR3110ZPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRLR3110ZPBF DISTI #IRLR3110ZPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 63A 3-Pin(2 Tab) DPAK Tu RoHS: Compliant	2550	3000 $0.5548 3002 $0.5538 6002 $0.5519 15000 $0.55 30000 $0.5481
IRLR3110ZPBF DISTI #IRLR3110ZPBF	Infineon Technologies AG	MOSFET N-CH 100V 42A DPAK RoHS: Compliant	0
IRLR3110ZPBF DISTI #IRLR3110ZPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 63A 3-Pin(2 Tab) DPAK Tu RoHS: Compliant	8	1 $3.32
IRLR3110ZPBF DISTI #IRLR3110ZPBF	Infineon Technologies AG	MOSFET, Transistor Polarity:N Channel, Continuou	183	1 $1.76 10 $1.51 100 $1.23 500 $1.08 1000 $0.918 2500 $0.891 10000 $0.862
IRLR3110ZPBF. DISTI #IRLR3110ZPBF.	Infineon Technologies AG	MOSFET, Transistor Polarity:N Channel, Continuou	0
IRLR3110ZPBF DISTI #IRLR3110ZPBF	Infineon Technologies AG	MOSFET, N Ch., Automotive, 100V, 63A, 14 MOHM RoHS: Compliant	0	600 $1.83 1200 $1.62
IRLR3110ZPBF DISTI #IRLR3110ZPBF	Infineon Technologies AG	MOSFET 100V HEXFET 14mOhms 15nC RoHS: Compliant	23	1 $1.67 10 $1.42 100 $1.13 500 $0.988 1000 $0.819
IRLR3110ZPBF DISTI #IRLR3110ZPBF	Infineon Technologies AG	MOSFET N-CHANNEL 100V 63A DPAK, TU	2305	25 $1.082 100 $0.946 250 $0.884 500 $0.836
IRLR3110ZPBF DISTI #IRLR3110ZPBF	Infineon Technologies AG	MOSFET N-CHANNEL 100V 63A DPAK, TU	75	75 $0.836 150 $0.711 300 $0.627 750 $0.543 1500 $0.533
IRLR3110ZPBF DISTI #IRLR3110ZPBF	Infineon Technologies AG	MOSFET N-CHANNEL 100V 63A DPAK, PK	395	5 $1.228 25 $1.082 100 $0.946 250 $0.884 500 $0.836
IRLR3110ZPBF DISTI #IRLR3110ZPBF	International Rectifier	MOSFET Transistor, N-Channel, TO-252AA	76	1 $1.8 12 $0.9 57 $0.63
IRLR3110ZPBF DISTI #IRLR3110ZPBF	International Rectifier	MOSFET Transistor, N-Channel, TO-252AA	3	1 $3.786 2 $2.8395
IRLR3110ZPBF DISTI #IRLR3110ZPBF	Infineon Technologies AG	Transistor: N-MOSFET, unipolar, 100V, 63A, 140	149	1 $1.17 3 $1.03 10 $0.84 75 $0.77
IRLR3110ZPBF DISTI #IRLR3110ZPBF	Infineon Technologies AG	N-LogL 100V 42A 140W 0,014R TO252AA RoHS: Compliant	2950	75 $0.5965 150 $0.5365 300 $0.5065 600 $0.4875
IRLR3110ZTRPBF DISTI #IRLR3110ZTRPBF	Infineon Technologies AG	N-LogL 100V 42A 140W 0,014R TO252AA RoHS: Compliant	2000	50 $0.612 100 $0.552 500 $0.522 3000 $0.5025
IRLR3110ZPBF DISTI #IRLR3110ZPBF	Infineon Technologies AG	MOSFET, N, 100V, D-PAK RoHS: Compliant	0	5 $2.51 25 $2.1 100 $1.61 250 $1.37 500 $1.19 1000 $1.12 5000 $1.07
IRLR3110ZPBF DISTI #IRLR3110ZPBF	Infineon Technologies AG	MOSFET, N, 100V, D-PAK RoHS: Compliant	0	5 $1.22 25 $1.11 100 $0.894 250 $0.838 500 $0.781

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Infineon Technologies IRLR3110ZPBF

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