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IRLR2908TRLPBF

Infineon Technologies IRLR2908TRLPBF

Part Number:
IRLR2908TRLPBF
Manufacturer:
Infineon Technologies
Ventron No:
2478669-IRLR2908TRLPBF
Description:
MOSFET N-CH 80V 30A DPAK
ECAD Model:
Datasheet:
IRLR2908TRLPBF

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Specifications
Infineon Technologies IRLR2908TRLPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLR2908TRLPBF.
  • Factory Lead Time
    14 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2003
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Additional Feature
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    120W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    28m Ω @ 23A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1890pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    30A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    33nC @ 4.5V
  • Drain to Source Voltage (Vdss)
    80V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±16V
  • JEDEC-95 Code
    TO-252AA
  • Drain Current-Max (Abs) (ID)
    30A
  • Drain-source On Resistance-Max
    0.028Ohm
  • Pulsed Drain Current-Max (IDM)
    150A
  • DS Breakdown Voltage-Min
    80V
  • Avalanche Energy Rating (Eas)
    250 mJ
  • RoHS Status
    ROHS3 Compliant
Description
IRLR2908TRLPBF Description
IRLR2908TRLPBF belongs to the family of HEXFET? power MOSFETs that are manufactured by Infineon Technologies. Based on the latest processing techniques, it is able to achieve extremely low on-resistance per silicon area. Moreover, it is capable of providing a fast switching speed and improved repetitive avalanche rating. All of these enable the power MOSFET IRLR2908TRLPBF to be efficient and reliable in various applications.

IRLR2908TRLPBF Features
Available in the D-Pak package
Extremely low on-resistance per silicon area
Fast switching speed
Improved repetitive avalanche rating
Operating junction temperature of 175 °C

IRLR2908TRLPBF Applications
Synchronous rectification
High-frequency switching applications
IRLR2908TRLPBF More Descriptions
T&R / MOSFET, 80V, 39A, 28 mOhm, 22 nC Qg, Logic Level, D-Pak
Single N-Channel 80 V 28 mOhm 22 nC HEXFET® Power Mosfet - TO-252-3
80V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
Product Comparison
The three parts on the right have similar specifications to IRLR2908TRLPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    RoHS Status
    Mount
    Number of Pins
    Resistance
    Voltage - Rated DC
    Current Rating
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Lead Free
    Pbfree Code
    Reach Compliance Code
    Pin Count
    View Compare
  • IRLR2908TRLPBF
    IRLR2908TRLPBF
    Infineon Technologies
    14 Weeks
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2003
    e3
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
    FET General Purpose Power
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    260
    30
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    120W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    28m Ω @ 23A, 10V
    2.5V @ 250μA
    1890pF @ 25V
    30A Tc
    33nC @ 4.5V
    80V
    4.5V 10V
    ±16V
    TO-252AA
    30A
    0.028Ohm
    150A
    80V
    250 mJ
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLR3105PBF
    IRLR3105PBF
    Infineon Technologies
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2008
    e3
    Discontinued
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    GULL WING
    260
    30
    R-PSSO-G2
    -
    1
    -
    57W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    37m Ω @ 15A, 10V
    3V @ 250μA
    710pF @ 25V
    25A Tc
    20nC @ 5V
    -
    5V 10V
    ±16V
    TO-252AA
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Surface Mount
    3
    37mOhm
    55V
    25A
    Single
    57W
    8 ns
    57ns
    37 ns
    25 ns
    25A
    3V
    16V
    55V
    55V
    3 V
    2.39mm
    6.73mm
    6.223mm
    No SVHC
    No
    Lead Free
    -
    -
    -
    IRLR2908TRLPBF vs IRLR3105PBF
  • IRLR3103
    IRLR3103
    Infineon Technologies
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    1998
    e0
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Tin/Lead (Sn/Pb)
    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
    -
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    245
    30
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    107W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    19m Ω @ 33A, 10V
    1V @ 250μA
    1600pF @ 25V
    55A Tc
    50nC @ 4.5V
    30V
    4.5V 10V
    ±16V
    TO-252AA
    20A
    0.019Ohm
    220A
    30V
    240 mJ
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRLR2908TRLPBF vs IRLR3103
  • IRLR130ATM
    IRLR130ATM
    Fairchild/ON Semiconductor
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    -
    e3
    Obsolete
    1 (Unlimited)
    2
    -
    MATTE TIN
    -
    -
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSSO-G2
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    2.5W Ta 46W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    120m Ω @ 6.5A, 5V
    2V @ 250μA
    755pF @ 25V
    13A Tc
    24nC @ 5V
    100V
    5V
    ±20V
    -
    13A
    0.12Ohm
    45A
    100V
    225 mJ
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    yes
    unknown
    3
    IRLR2908TRLPBF vs IRLR130ATM
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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