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IRLR2905ZTRPBF

Infineon Technologies IRLR2905ZTRPBF

Part Number:
IRLR2905ZTRPBF
Manufacturer:
Infineon Technologies
Ventron No:
2848882-IRLR2905ZTRPBF
Description:
MOSFET N-CH 55V 42A DPAK
ECAD Model:
Datasheet:
IRLR2905ZTRPBF

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Specifications
Infineon Technologies IRLR2905ZTRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLR2905ZTRPBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2010
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    13.5MOhm
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Additional Feature
    AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    55V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    60A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    110W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    110W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    14 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    13.5m Ω @ 36A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1570pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    42A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    35nC @ 5V
  • Rise Time
    130ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±16V
  • Fall Time (Typ)
    33 ns
  • Turn-Off Delay Time
    24 ns
  • Continuous Drain Current (ID)
    42mA
  • Threshold Voltage
    3V
  • JEDEC-95 Code
    TO-252AA
  • Gate to Source Voltage (Vgs)
    16V
  • Drain Current-Max (Abs) (ID)
    42A
  • Drain to Source Breakdown Voltage
    55V
  • Pulsed Drain Current-Max (IDM)
    240A
  • Dual Supply Voltage
    55V
  • Avalanche Energy Rating (Eas)
    85 mJ
  • Recovery Time
    33 ns
  • Nominal Vgs
    3 V
  • Height
    2.2606mm
  • Length
    6.7056mm
  • Width
    6.22mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Contains Lead, Lead Free
Description
IRLR2905ZTRPBF Description
In order to achieve exceptionally low on-resistance per silicon area, this HEXFET? Power MOSFET makes use of the most recent processing methods. A 175°C junction operating temperature, quick switching, and increased repeating avalanche rating are other characteristics of this design. These characteristics work together to provide a highly effective and dependable gadget that may be used in a wide range of applications.

IRLR2905ZTRPBF Features
Logic Grade
Contemporary Process Technology
Very Little On-Resistance
Operating Temperature: 175 °C
Switching quickly
Recurrent Avalanche Permitted to Tjmax

IRLR2905ZTRPBF Applications
Switching applications
IRLR2905ZTRPBF More Descriptions
In a Tube of 75, N-Channel MOSFET, 60 A, 55 V, 3-Pin DPAK Infineon IRLR2905ZPBF
Trans MOSFET N-CH Si 55V 60A 3-Pin(2 Tab) DPAK T/R / MOSFET N-CH 55V 42A DPAK
Single N-Channel 55 V 22.5 mOhm 35 nC HEXFET® Power Mosfet - TO-252AA
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
N CHANNEL MOSFET, 55V, 42A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current, Id:42mA; Drain Source Voltage, Vds:55V; On Resistance, Rds(on):0.135ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1V ;RoHS Compliant: Yes
Power Field-Effect Transistor, 42A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature; Logic Level | Target Applications: AC-DC
MOSFET, N-CH, 55V, 42A, TO-252AA; Transistor Polarity: N Channel; Continuous Drain Current Id: 42A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 110W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 42 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 13.5 / Gate-Source Voltage V = 16 / Fall Time ns = 33 / Rise Time ns = 130 / Turn-OFF Delay Time ns = 24 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 110
Product Comparison
The three parts on the right have similar specifications to IRLR2905ZTRPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Terminal Finish
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Dual Supply Voltage
    Avalanche Energy Rating (Eas)
    Recovery Time
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    Surface Mount
    Pbfree Code
    Terminal Position
    Reach Compliance Code
    Pin Count
    Qualification Status
    Configuration
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Max Operating Temperature
    Min Operating Temperature
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    View Compare
  • IRLR2905ZTRPBF
    IRLR2905ZTRPBF
    Infineon Technologies
    12 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2010
    e3
    Active
    1 (Unlimited)
    2
    SMD/SMT
    EAR99
    13.5MOhm
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
    FET General Purpose Power
    55V
    MOSFET (Metal Oxide)
    GULL WING
    260
    60A
    30
    R-PSSO-G2
    1
    110W Tc
    Single
    ENHANCEMENT MODE
    110W
    DRAIN
    14 ns
    N-Channel
    SWITCHING
    13.5m Ω @ 36A, 10V
    3V @ 250μA
    1570pF @ 25V
    42A Tc
    35nC @ 5V
    130ns
    4.5V 10V
    ±16V
    33 ns
    24 ns
    42mA
    3V
    TO-252AA
    16V
    42A
    55V
    240A
    55V
    85 mJ
    33 ns
    3 V
    2.2606mm
    6.7056mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Contains Lead, Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLR3103TRR
    IRLR3103TRR
    Infineon Technologies
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    1998
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    107W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    19mOhm @ 33A, 10V
    1V @ 250μA
    1600pF @ 25V
    55A Tc
    50nC @ 4.5V
    -
    4.5V 10V
    ±16V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    D-Pak
    30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRLR2905ZTRPBF vs IRLR3103TRR
  • IRLR130ATM
    IRLR130ATM
    Fairchild/ON Semiconductor
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    -
    e3
    Obsolete
    1 (Unlimited)
    2
    -
    -
    -
    MATTE TIN
    -
    -
    -
    MOSFET (Metal Oxide)
    GULL WING
    NOT SPECIFIED
    -
    NOT SPECIFIED
    R-PSSO-G2
    1
    2.5W Ta 46W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    120m Ω @ 6.5A, 5V
    2V @ 250μA
    755pF @ 25V
    13A Tc
    24nC @ 5V
    -
    5V
    ±20V
    -
    -
    -
    -
    -
    -
    13A
    -
    45A
    -
    225 mJ
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    100V
    YES
    yes
    SINGLE
    unknown
    3
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    0.12Ohm
    100V
    -
    -
    -
    -
    -
    IRLR2905ZTRPBF vs IRLR130ATM
  • IRLR024TR
    IRLR024TR
    Vishay Siliconix
    21 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    2
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    2016
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    60V
    MOSFET (Metal Oxide)
    -
    -
    14A
    -
    -
    -
    2.5W Ta 42W Tc
    Single
    -
    2.5W
    -
    11 ns
    N-Channel
    -
    100mOhm @ 8.4A, 5V
    2V @ 250μA
    870pF @ 25V
    14A Tc
    18nC @ 5V
    110ns
    4V 5V
    ±10V
    41 ns
    23 ns
    14A
    -
    -
    10V
    -
    60V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    No
    Non-RoHS Compliant
    Contains Lead
    D-Pak
    60V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    150°C
    -55°C
    870pF
    100mOhm
    100 mΩ
    IRLR2905ZTRPBF vs IRLR024TR
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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