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Infineon Technologies IRLR2905ZPBF
- Part Number:
- IRLR2905ZPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3070205-IRLR2905ZPBF
- Description:
- MOSFET N-CH 55V 42A DPAK
- ECAD Model:
-
- Datasheet:
- IRLR2905ZPBF
Infineon Technologies IRLR2905ZPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLR2905ZPBF.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Supplier Device PackageD-Pak
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max110W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs13.5mOhm @ 36A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1.57pF @ 25V
- Current - Continuous Drain (Id) @ 25°C42A Tc
- Gate Charge (Qg) (Max) @ Vgs35nC @ 5V
- Drain to Source Voltage (Vdss)55V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±16V
- RoHS StatusROHS3 Compliant
IRLR2905ZPBF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1.57pF @ 25V.Operating this transistor requires a 55V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
IRLR2905ZPBF Features
a 55V drain to source voltage (Vdss)
IRLR2905ZPBF Applications
There are a lot of Rochester Electronics, LLC
IRLR2905ZPBF applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1.57pF @ 25V.Operating this transistor requires a 55V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
IRLR2905ZPBF Features
a 55V drain to source voltage (Vdss)
IRLR2905ZPBF Applications
There are a lot of Rochester Electronics, LLC
IRLR2905ZPBF applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
IRLR2905ZPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 11 Milliohms;ID 42A;D-Pak (TO-252AA);PD 110W
Single N-Channel 55 V 13.5 mOhm 23 nC HEXFET® Power Mosfet - DPAK
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature; Logic Level | Target Applications: AC-DC
MOSFET, IPS, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:55V; On Resistance Rds(on):13.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:2905; Current Id Max:42A; Current Idss Max:250mA; Current Idss Min:20mA; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; Package / Case:DPAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:240A; Storage Temperature Max:175°C; Storage Temperature Min:-55°C; Termination Type:SMD; Turn Off Time:24ns; Turn On Time:14ns; Voltage Vds:55V; Voltage Vds Typ:55V; Voltage Vgs Max:16V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V
Single N-Channel 55 V 13.5 mOhm 23 nC HEXFET® Power Mosfet - DPAK
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature; Logic Level | Target Applications: AC-DC
MOSFET, IPS, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:55V; On Resistance Rds(on):13.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:2905; Current Id Max:42A; Current Idss Max:250mA; Current Idss Min:20mA; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; Package / Case:DPAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:240A; Storage Temperature Max:175°C; Storage Temperature Min:-55°C; Termination Type:SMD; Turn Off Time:24ns; Turn On Time:14ns; Voltage Vds:55V; Voltage Vds Typ:55V; Voltage Vgs Max:16V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V
The three parts on the right have similar specifications to IRLR2905ZPBF.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusMountNumber of PinsTransistor Element MaterialPublishedJESD-609 CodeNumber of TerminationsECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeTransistor ApplicationRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Dual Supply VoltageAvalanche Energy Rating (Eas)Recovery TimeNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningLead FreeSurface MountPbfree CodeTerminal PositionReach Compliance CodePin CountQualification StatusConfigurationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinView Compare
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IRLR2905ZPBFSurface MountTO-252-3, DPak (2 Leads Tab), SC-63D-Pak-55°C~175°C TJTubeHEXFET®Obsolete1 (Unlimited)MOSFET (Metal Oxide)110W TcN-Channel13.5mOhm @ 36A, 10V3V @ 250μA1.57pF @ 25V42A Tc35nC @ 5V55V4.5V 10V±16VROHS3 Compliant------------------------------------------------------ -
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~175°C TJTubeHEXFET®Discontinued1 (Unlimited)MOSFET (Metal Oxide)45W TcN-Channel45m Ω @ 14A, 10V1V @ 250μA450pF @ 25V23A Tc15nC @ 4.5V-4V 10V±16VROHS3 CompliantSurface Mount3SILICON2003e32EAR9945mOhmMatte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATEDFET General Purpose Power30VGULL WING26023A30R-PSSO-G21SingleENHANCEMENT MODE38WDRAIN8.5 nsSWITCHING140ns20 ns12 ns23A1VTO-252AA16V30V96A30V77 mJ97 ns1 V2.39mm6.73mm6.22mmNo SVHCNoLead Free----------
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~175°C TJTubeHEXFET®Discontinued1 (Unlimited)MOSFET (Metal Oxide)57W TcN-Channel37m Ω @ 15A, 10V3V @ 250μA710pF @ 25V25A Tc20nC @ 5V-5V 10V±16VROHS3 CompliantSurface Mount3SILICON2008e32EAR9937mOhmMatte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCEFET General Purpose Power55VGULL WING26025A30R-PSSO-G21SingleENHANCEMENT MODE57WDRAIN8 nsSWITCHING57ns37 ns25 ns25A3VTO-252AA16V55V-55V--3 V2.39mm6.73mm6.223mmNo SVHCNoLead Free----------
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~150°C TJTape & Reel (TR)-Obsolete1 (Unlimited)MOSFET (Metal Oxide)2.5W Ta 46W TcN-Channel120m Ω @ 6.5A, 5V2V @ 250μA755pF @ 25V13A Tc24nC @ 5V100V5V±20VROHS3 Compliant--SILICON-e32--MATTE TIN---GULL WINGNOT SPECIFIED-NOT SPECIFIEDR-PSSO-G21-ENHANCEMENT MODE-DRAIN-SWITCHING--------45A-225 mJ--------YESyesSINGLEunknown3COMMERCIALSINGLE WITH BUILT-IN DIODE13A0.12Ohm100V
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