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IRLR2705PBF

Infineon Technologies IRLR2705PBF

Part Number:
IRLR2705PBF
Manufacturer:
Infineon Technologies
Ventron No:
2487369-IRLR2705PBF
Description:
MOSFET N-CH 55V 28A DPAK
ECAD Model:
Datasheet:
IRLR2705PBF

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Specifications
Infineon Technologies IRLR2705PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLR2705PBF.
  • Factory Lead Time
    20 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2003
  • JESD-609 Code
    e3
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Additional Feature
    LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    68W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    40m Ω @ 17A, 10V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    880pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    28A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    25nC @ 5V
  • Drain to Source Voltage (Vdss)
    55V
  • Drive Voltage (Max Rds On,Min Rds On)
    4V 10V
  • Vgs (Max)
    ±16V
  • JEDEC-95 Code
    TO-252AA
  • Drain Current-Max (Abs) (ID)
    28A
  • Drain-source On Resistance-Max
    0.051Ohm
  • Pulsed Drain Current-Max (IDM)
    110A
  • DS Breakdown Voltage-Min
    55V
  • Avalanche Energy Rating (Eas)
    110 mJ
  • RoHS Status
    ROHS3 Compliant
Description
IRLR2705PBF Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

IRLR2705PBF Features Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount (IRLR2705) Straight Lead (IRLU2705) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free

IRLR2705PBF More Descriptions
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.04Ohm;ID 28A;D-Pak (TO-252AA);PD 68W;-55de
Transistor: N-MOSFET; unipolar; 55V; 28A; 0.04ohm; 68W; -55 175 deg.C; SMD; TO252AA(DPAK)
Single N-Channel 55 V 0.04 Ohm 25 nC HEXFET® Power Mosfet - TO-252AA
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:55V; On Resistance Rds(on):40mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:46W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:28A; Package / Case:DPAK; Power Dissipation Pd:46W; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to IRLR2705PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    RoHS Status
    Mount
    Number of Pins
    Resistance
    Voltage - Rated DC
    Current Rating
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Lead Free
    Supplier Device Package
    Input Capacitance
    Rds On Max
    View Compare
  • IRLR2705PBF
    IRLR2705PBF
    Infineon Technologies
    20 Weeks
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2003
    e3
    Discontinued
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
    FET General Purpose Power
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    260
    30
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    68W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    40m Ω @ 17A, 10V
    2V @ 250μA
    880pF @ 25V
    28A Tc
    25nC @ 5V
    55V
    4V 10V
    ±16V
    TO-252AA
    28A
    0.051Ohm
    110A
    55V
    110 mJ
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLR3105PBF
    IRLR3105PBF
    Infineon Technologies
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2008
    e3
    Discontinued
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    GULL WING
    260
    30
    R-PSSO-G2
    -
    1
    -
    57W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    37m Ω @ 15A, 10V
    3V @ 250μA
    710pF @ 25V
    25A Tc
    20nC @ 5V
    -
    5V 10V
    ±16V
    TO-252AA
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Surface Mount
    3
    37mOhm
    55V
    25A
    Single
    57W
    8 ns
    57ns
    37 ns
    25 ns
    25A
    3V
    16V
    55V
    55V
    3 V
    2.39mm
    6.73mm
    6.223mm
    No SVHC
    No
    Lead Free
    -
    -
    -
    IRLR2705PBF vs IRLR3105PBF
  • IRLR3103
    IRLR3103
    Infineon Technologies
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    1998
    e0
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Tin/Lead (Sn/Pb)
    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
    -
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    245
    30
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    107W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    19m Ω @ 33A, 10V
    1V @ 250μA
    1600pF @ 25V
    55A Tc
    50nC @ 4.5V
    30V
    4.5V 10V
    ±16V
    TO-252AA
    20A
    0.019Ohm
    220A
    30V
    240 mJ
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRLR2705PBF vs IRLR3103
  • IRLR024TRR
    IRLR024TRR
    Vishay Siliconix
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    1997
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    2.5W Ta 42W Tc
    -
    -
    N-Channel
    -
    100mOhm @ 8.4A, 5V
    2V @ 250μA
    870pF @ 25V
    14A Tc
    18nC @ 5V
    60V
    4V 5V
    ±10V
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Surface Mount
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    14A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    D-Pak
    870pF
    100 mΩ
    IRLR2705PBF vs IRLR024TRR
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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