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Infineon Technologies IRLR120NTRPBF
- Part Number:
- IRLR120NTRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3070088-IRLR120NTRPBF
- Description:
- MOSFET N-CH 100V 10A DPAK
- ECAD Model:
-
- Datasheet:
- IRLR120NTRPBF
Infineon Technologies IRLR120NTRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLR120NTRPBF.
- Factory Lead Time12 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2004
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance185mOhm
- Additional FeatureAVALANCHE RATED
- SubcategoryFET General Purpose Power
- Voltage - Rated DC100V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating11A
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max48W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation48W
- Case ConnectionDRAIN
- Turn On Delay Time4 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs185m Ω @ 6A, 10V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds440pF @ 25V
- Current - Continuous Drain (Id) @ 25°C10A Tc
- Gate Charge (Qg) (Max) @ Vgs20nC @ 5V
- Rise Time35ns
- Drive Voltage (Max Rds On,Min Rds On)4V 10V
- Vgs (Max)±16V
- Fall Time (Typ)22 ns
- Turn-Off Delay Time23 ns
- Continuous Drain Current (ID)10A
- Threshold Voltage2V
- JEDEC-95 CodeTO-252AA
- Gate to Source Voltage (Vgs)16V
- Drain to Source Breakdown Voltage100V
- Dual Supply Voltage100V
- Avalanche Energy Rating (Eas)85 mJ
- Recovery Time160 ns
- Max Junction Temperature (Tj)175°C
- Nominal Vgs2 V
- Height2.52mm
- Length6.7056mm
- Width6.22mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRLR120NTRPBF Description
The IRLR120NTRPBF is a HEXFET? fifth generation single N-channel Power MOSFET utilizing advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides a highly efficient device for use in a wide variety of applications. It is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.
IRLR120NTRPBF Features
Advanced process technology
Fast switching
Fully avalanche rating
Low static drain-to-source ON-resistance
Dynamic dV/dt rating
Logic level
IRLR120NTRPBF Applications
Induction furnaces
Arc furnaces and arc welders
Steel rolling mills
Large motors with periodic loading
Thyristor drives
Railway traction which is mostly through d.c. drives
And many loads which may have to be frequently switched
The IRLR120NTRPBF is a HEXFET? fifth generation single N-channel Power MOSFET utilizing advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides a highly efficient device for use in a wide variety of applications. It is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.
IRLR120NTRPBF Features
Advanced process technology
Fast switching
Fully avalanche rating
Low static drain-to-source ON-resistance
Dynamic dV/dt rating
Logic level
IRLR120NTRPBF Applications
Induction furnaces
Arc furnaces and arc welders
Steel rolling mills
Large motors with periodic loading
Thyristor drives
Railway traction which is mostly through d.c. drives
And many loads which may have to be frequently switched
IRLR120NTRPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.185Ohm;ID 10A;D-Pak (TO-252AA);PD 48W
Single N-Channel 100 V 0.185 Ohm 20 nC HEXFET® Power Mosfet - TO-252AA
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
N CHANNEL MOSFET, 100V, 10A, D-PAK; TRAN; Transistor Polarity:N Channel; Continuous Drain Current Id:10A;
IRLR120NTRPBF,MOSFET, 100V, 11 A, 185 MOHM, 13.3 NC QG, LOGI
Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:11A; Package/Case:D-PAK; Power Dissipation, Pd:39W; Continuous Drain Current - 100 Deg C:6.9A; Drain Source On Resistance @ 10V:185mohm ;RoHS Compliant: Yes
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 10 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 185 / Gate-Source Voltage V = 16 / Fall Time ns = 22 / Rise Time ns = 35 / Turn-OFF Delay Time ns = 23 / Turn-ON Delay Time ns = 4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 48
Single N-Channel 100 V 0.185 Ohm 20 nC HEXFET® Power Mosfet - TO-252AA
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
N CHANNEL MOSFET, 100V, 10A, D-PAK; TRAN; Transistor Polarity:N Channel; Continuous Drain Current Id:10A;
IRLR120NTRPBF,MOSFET, 100V, 11 A, 185 MOHM, 13.3 NC QG, LOGI
Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:11A; Package/Case:D-PAK; Power Dissipation, Pd:39W; Continuous Drain Current - 100 Deg C:6.9A; Drain Source On Resistance @ 10V:185mohm ;RoHS Compliant: Yes
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 10 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 185 / Gate-Source Voltage V = 16 / Fall Time ns = 22 / Rise Time ns = 35 / Turn-OFF Delay Time ns = 23 / Turn-ON Delay Time ns = 4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 48
The three parts on the right have similar specifications to IRLR120NTRPBF.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceAdditional FeatureSubcategoryVoltage - Rated DCTechnologyTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageAvalanche Energy Rating (Eas)Recovery TimeMax Junction Temperature (Tj)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FinishSurface MountTerminal PositionQualification StatusConfigurationDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinPbfree CodeReach Compliance CodePin CountView Compare
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IRLR120NTRPBF12 WeeksTinSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~175°C TJTape & Reel (TR)HEXFET®2004e3Active1 (Unlimited)2SMD/SMTEAR99185mOhmAVALANCHE RATEDFET General Purpose Power100VMOSFET (Metal Oxide)GULL WING26011A30R-PSSO-G21148W TcSingleENHANCEMENT MODE48WDRAIN4 nsN-ChannelSWITCHING185m Ω @ 6A, 10V2V @ 250μA440pF @ 25V10A Tc20nC @ 5V35ns4V 10V±16V22 ns23 ns10A2VTO-252AA16V100V100V85 mJ160 ns175°C2 V2.52mm6.7056mm6.22mmNo SVHCNoROHS3 CompliantLead Free-------------- -
--Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~175°C TJTubeHEXFET®2008e3Discontinued1 (Unlimited)2-EAR9937mOhmAVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCEFET General Purpose Power55VMOSFET (Metal Oxide)GULL WING26025A30R-PSSO-G21-57W TcSingleENHANCEMENT MODE57WDRAIN8 nsN-ChannelSWITCHING37m Ω @ 15A, 10V3V @ 250μA710pF @ 25V25A Tc20nC @ 5V57ns5V 10V±16V37 ns25 ns25A3VTO-252AA16V55V55V---3 V2.39mm6.73mm6.223mmNo SVHCNoROHS3 CompliantLead FreeMatte Tin (Sn) - with Nickel (Ni) barrier------------
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---Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-SILICON-55°C~175°C TJTubeHEXFET®1998e0Obsolete1 (Unlimited)2-EAR99-AVALANCHE RATED, LOGIC LEVEL COMPATIBLE--MOSFET (Metal Oxide)GULL WING245-30R-PSSO-G21-107W Tc-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING19m Ω @ 33A, 10V1V @ 250μA1600pF @ 25V55A Tc50nC @ 4.5V-4.5V 10V±16V----TO-252AA---240 mJ--------Non-RoHS Compliant-Tin/Lead (Sn/Pb)YESSINGLENot QualifiedSINGLE WITH BUILT-IN DIODE30V20A0.019Ohm220A30V---
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---Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-SILICON-55°C~150°C TJTape & Reel (TR)--e3Obsolete1 (Unlimited)2------MOSFET (Metal Oxide)GULL WINGNOT SPECIFIED-NOT SPECIFIEDR-PSSO-G21-2.5W Ta 46W Tc-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING120m Ω @ 6.5A, 5V2V @ 250μA755pF @ 25V13A Tc24nC @ 5V-5V±20V--------225 mJ--------ROHS3 Compliant-MATTE TINYESSINGLECOMMERCIALSINGLE WITH BUILT-IN DIODE100V13A0.12Ohm45A100Vyesunknown3
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