Vishay Siliconix IRLR110TR
- Part Number:
- IRLR110TR
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3554360-IRLR110TR
- Description:
- MOSFET N-CH 100V 4.3A DPAK
- Datasheet:
- IRLR110TR
Vishay Siliconix IRLR110TR technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRLR110TR.
- Factory Lead Time49 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Supplier Device PackageD-Pak
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2016
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max2.5W Ta 25W Tc
- Element ConfigurationSingle
- Turn On Delay Time9.3 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs540mOhm @ 2.6A, 5V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds250pF @ 25V
- Current - Continuous Drain (Id) @ 25°C4.3A Tc
- Gate Charge (Qg) (Max) @ Vgs6.1nC @ 5V
- Rise Time47ns
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)4V 5V
- Vgs (Max)±10V
- Fall Time (Typ)17 ns
- Turn-Off Delay Time16 ns
- Continuous Drain Current (ID)4.3A
- Gate to Source Voltage (Vgs)10V
- Drain to Source Breakdown Voltage100V
- Input Capacitance250pF
- Drain to Source Resistance540mOhm
- Rds On Max540 mΩ
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
IRLR110TR Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 250pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 4.3A amps.In this device, the drain-source breakdown voltage is 100V and VGS=100V, so the drain-source breakdown voltage is 100V in this case.It is [16 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 540mOhm.A turn-on delay time of 9.3 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4V 5V).
IRLR110TR Features
a continuous drain current (ID) of 4.3A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 16 ns
single MOSFETs transistor is 540mOhm
a 100V drain to source voltage (Vdss)
IRLR110TR Applications
There are a lot of Vishay Siliconix
IRLR110TR applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 250pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 4.3A amps.In this device, the drain-source breakdown voltage is 100V and VGS=100V, so the drain-source breakdown voltage is 100V in this case.It is [16 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 540mOhm.A turn-on delay time of 9.3 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4V 5V).
IRLR110TR Features
a continuous drain current (ID) of 4.3A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 16 ns
single MOSFETs transistor is 540mOhm
a 100V drain to source voltage (Vdss)
IRLR110TR Applications
There are a lot of Vishay Siliconix
IRLR110TR applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IRLR110TR More Descriptions
Trans MOSFET N-CH 100V 4.3A 3-Pin (2 Tab) DPAK T/R
The three parts on the right have similar specifications to IRLR110TR.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyPower Dissipation-MaxElement ConfigurationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxRadiation HardeningRoHS StatusSurface MountSeriesSubcategoryConfigurationOperating ModeDrain Current-Max (Abs) (ID)Voltage - Rated DCCurrent RatingPower DissipationLead FreeView Compare
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IRLR110TR49 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633D-Pak-55°C~150°C TJTape & Reel (TR)2016Active1 (Unlimited)150°C-55°CMOSFET (Metal Oxide)2.5W Ta 25W TcSingle9.3 nsN-Channel540mOhm @ 2.6A, 5V2V @ 250μA250pF @ 25V4.3A Tc6.1nC @ 5V47ns100V4V 5V±10V17 ns16 ns4.3A10V100V250pF540mOhm540 mΩNoNon-RoHS Compliant-----------
-
--Surface MountTO-252-3, DPak (2 Leads Tab), SC-63---55°C~175°C TJTape & Reel (TR)2001Obsolete1 (Unlimited)--MOSFET (Metal Oxide)28W Tc--N-Channel140m Ω @ 6A, 10V1V @ 250μA265pF @ 25V10A Tc7.9nC @ 5V-55V4.5V 10V±16V---------Non-RoHS CompliantYESHEXFET®FET General Purpose PowerSingleENHANCEMENT MODE10A----
-
-Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63-D-Pak-55°C~150°C TJTape & Reel (TR)1997Active1 (Unlimited)--MOSFET (Metal Oxide)2.5W Ta 42W Tc--N-Channel100mOhm @ 8.4A, 5V2V @ 250μA870pF @ 25V14A Tc18nC @ 5V-60V4V 5V±10V--14A--870pF-100 mΩ-Non-RoHS Compliant----------
-
21 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-632D-Pak-55°C~150°C TJTape & Reel (TR)2016Active1 (Unlimited)150°C-55°CMOSFET (Metal Oxide)2.5W Ta 42W TcSingle11 nsN-Channel100mOhm @ 8.4A, 5V2V @ 250μA870pF @ 25V14A Tc18nC @ 5V110ns60V4V 5V±10V41 ns23 ns14A10V60V870pF100mOhm100 mΩNoNon-RoHS Compliant------60V14A2.5WContains Lead
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