IRLR110TR

Vishay Siliconix IRLR110TR

Part Number:
IRLR110TR
Manufacturer:
Vishay Siliconix
Ventron No:
3554360-IRLR110TR
Description:
MOSFET N-CH 100V 4.3A DPAK
ECAD Model:
Datasheet:
IRLR110TR

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Specifications
Vishay Siliconix IRLR110TR technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRLR110TR.
  • Factory Lead Time
    49 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Supplier Device Package
    D-Pak
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2016
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Power Dissipation-Max
    2.5W Ta 25W Tc
  • Element Configuration
    Single
  • Turn On Delay Time
    9.3 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    540mOhm @ 2.6A, 5V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    250pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    4.3A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    6.1nC @ 5V
  • Rise Time
    47ns
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    4V 5V
  • Vgs (Max)
    ±10V
  • Fall Time (Typ)
    17 ns
  • Turn-Off Delay Time
    16 ns
  • Continuous Drain Current (ID)
    4.3A
  • Gate to Source Voltage (Vgs)
    10V
  • Drain to Source Breakdown Voltage
    100V
  • Input Capacitance
    250pF
  • Drain to Source Resistance
    540mOhm
  • Rds On Max
    540 mΩ
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
IRLR110TR Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 250pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 4.3A amps.In this device, the drain-source breakdown voltage is 100V and VGS=100V, so the drain-source breakdown voltage is 100V in this case.It is [16 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 540mOhm.A turn-on delay time of 9.3 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4V 5V).

IRLR110TR Features
a continuous drain current (ID) of 4.3A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 16 ns
single MOSFETs transistor is 540mOhm
a 100V drain to source voltage (Vdss)


IRLR110TR Applications
There are a lot of Vishay Siliconix
IRLR110TR applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IRLR110TR More Descriptions
Trans MOSFET N-CH 100V 4.3A 3-Pin (2 Tab) DPAK T/R
Product Comparison
The three parts on the right have similar specifications to IRLR110TR.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Power Dissipation-Max
    Element Configuration
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Radiation Hardening
    RoHS Status
    Surface Mount
    Series
    Subcategory
    Configuration
    Operating Mode
    Drain Current-Max (Abs) (ID)
    Voltage - Rated DC
    Current Rating
    Power Dissipation
    Lead Free
    View Compare
  • IRLR110TR
    IRLR110TR
    49 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    D-Pak
    -55°C~150°C TJ
    Tape & Reel (TR)
    2016
    Active
    1 (Unlimited)
    150°C
    -55°C
    MOSFET (Metal Oxide)
    2.5W Ta 25W Tc
    Single
    9.3 ns
    N-Channel
    540mOhm @ 2.6A, 5V
    2V @ 250μA
    250pF @ 25V
    4.3A Tc
    6.1nC @ 5V
    47ns
    100V
    4V 5V
    ±10V
    17 ns
    16 ns
    4.3A
    10V
    100V
    250pF
    540mOhm
    540 mΩ
    No
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLR014NTRR
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    2001
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    28W Tc
    -
    -
    N-Channel
    140m Ω @ 6A, 10V
    1V @ 250μA
    265pF @ 25V
    10A Tc
    7.9nC @ 5V
    -
    55V
    4.5V 10V
    ±16V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    YES
    HEXFET®
    FET General Purpose Power
    Single
    ENHANCEMENT MODE
    10A
    -
    -
    -
    -
  • IRLR024TRR
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    D-Pak
    -55°C~150°C TJ
    Tape & Reel (TR)
    1997
    Active
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    2.5W Ta 42W Tc
    -
    -
    N-Channel
    100mOhm @ 8.4A, 5V
    2V @ 250μA
    870pF @ 25V
    14A Tc
    18nC @ 5V
    -
    60V
    4V 5V
    ±10V
    -
    -
    14A
    -
    -
    870pF
    -
    100 mΩ
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLR024TR
    21 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    2
    D-Pak
    -55°C~150°C TJ
    Tape & Reel (TR)
    2016
    Active
    1 (Unlimited)
    150°C
    -55°C
    MOSFET (Metal Oxide)
    2.5W Ta 42W Tc
    Single
    11 ns
    N-Channel
    100mOhm @ 8.4A, 5V
    2V @ 250μA
    870pF @ 25V
    14A Tc
    18nC @ 5V
    110ns
    60V
    4V 5V
    ±10V
    41 ns
    23 ns
    14A
    10V
    60V
    870pF
    100mOhm
    100 mΩ
    No
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    60V
    14A
    2.5W
    Contains Lead
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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