Vishay Siliconix IRLR024PBF
- Part Number:
- IRLR024PBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2480588-IRLR024PBF
- Description:
- MOSFET N-CH 60V 14A DPAK
- Datasheet:
- IRLR024PBF
Vishay Siliconix IRLR024PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRLR024PBF.
- Factory Lead Time8 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Weight1.437803g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2016
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Additional FeatureLOGIC LEVEL COMPATIBLE
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max42W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.5W
- Case ConnectionDRAIN
- Turn On Delay Time11 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs100m Ω @ 8.4A, 5V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds870pF @ 25V
- Current - Continuous Drain (Id) @ 25°C14A Tc
- Gate Charge (Qg) (Max) @ Vgs18nC @ 5V
- Rise Time110ns
- Drive Voltage (Max Rds On,Min Rds On)4V 5V
- Vgs (Max)±10V
- Fall Time (Typ)41 ns
- Turn-Off Delay Time23 ns
- Continuous Drain Current (ID)14A
- Gate to Source Voltage (Vgs)10V
- Drain to Source Breakdown Voltage60V
- Pulsed Drain Current-Max (IDM)56A
- Height2.39mm
- Length6.73mm
- Width6.22mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
IRLR024PBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 870pF @ 25V.This device conducts a continuous drain current (ID) of 14A, which is the maximum continuous current transistor can conduct.Using VGS=60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 60V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 23 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 56A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 11 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 10V.In order to reduce power consumption, this device uses a drive voltage of 4V 5V volts (4V 5V).
IRLR024PBF Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 23 ns
based on its rated peak drain current 56A.
IRLR024PBF Applications
There are a lot of Vishay Siliconix
IRLR024PBF applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 870pF @ 25V.This device conducts a continuous drain current (ID) of 14A, which is the maximum continuous current transistor can conduct.Using VGS=60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 60V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 23 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 56A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 11 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 10V.In order to reduce power consumption, this device uses a drive voltage of 4V 5V volts (4V 5V).
IRLR024PBF Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 23 ns
based on its rated peak drain current 56A.
IRLR024PBF Applications
There are a lot of Vishay Siliconix
IRLR024PBF applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IRLR024PBF More Descriptions
IRLR024 Series N-channel Surface Mount Power Mosfet 60V 14 Amp - D-Pak
Trans MOSFET N-CH 60V 14A 3-Pin(2 Tab) DPAK
Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
N channel ;VBRDSS 60 V; RDSon 100 mOhm ; ID 14 A
Trans MOSFET N-CH 60V 14A 3-Pin(2 Tab) DPAK
Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
N channel ;VBRDSS 60 V; RDSon 100 mOhm ; ID 14 A
The three parts on the right have similar specifications to IRLR024PBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureTechnologyTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)HeightLengthWidthRadiation HardeningRoHS StatusSeriesJESD-609 CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCCurrent RatingThreshold VoltageJEDEC-95 CodeDual Supply VoltageAvalanche Energy Rating (Eas)Recovery TimeNominal VgsREACH SVHCLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureDrain to Source Voltage (Vdss)Input CapacitanceDrain to Source ResistanceRds On MaxView Compare
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IRLR024PBF8 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-6331.437803gSILICON-55°C~150°C TJTube2016yesActive1 (Unlimited)2EAR99LOGIC LEVEL COMPATIBLEMOSFET (Metal Oxide)GULL WING260403R-PSSO-G21142W TcSingleENHANCEMENT MODE2.5WDRAIN11 nsN-ChannelSWITCHING100m Ω @ 8.4A, 5V2V @ 250μA870pF @ 25V14A Tc18nC @ 5V110ns4V 5V±10V41 ns23 ns14A10V60V56A2.39mm6.73mm6.22mmNoROHS3 Compliant-----------------------
-
-Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633-SILICON-55°C~175°C TJTube2003-Discontinued1 (Unlimited)2EAR99AVALANCHE RATEDMOSFET (Metal Oxide)GULL WING26030-R-PSSO-G21-45W TcSingleENHANCEMENT MODE38WDRAIN8.5 nsN-ChannelSWITCHING45m Ω @ 14A, 10V1V @ 250μA450pF @ 25V23A Tc15nC @ 4.5V140ns4V 10V±16V20 ns12 ns23A16V30V96A2.39mm6.73mm6.22mmNoROHS3 CompliantHEXFET®e345mOhmMatte Tin (Sn) - with Nickel (Ni) barrierFET General Purpose Power30V23A1VTO-252AA30V77 mJ97 ns1 VNo SVHCLead Free-------
-
-Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633-SILICON-55°C~175°C TJTube2008-Discontinued1 (Unlimited)2EAR99AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCEMOSFET (Metal Oxide)GULL WING26030-R-PSSO-G21-57W TcSingleENHANCEMENT MODE57WDRAIN8 nsN-ChannelSWITCHING37m Ω @ 15A, 10V3V @ 250μA710pF @ 25V25A Tc20nC @ 5V57ns5V 10V±16V37 ns25 ns25A16V55V-2.39mm6.73mm6.223mmNoROHS3 CompliantHEXFET®e337mOhmMatte Tin (Sn) - with Nickel (Ni) barrierFET General Purpose Power55V25A3VTO-252AA55V--3 VNo SVHCLead Free-------
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21 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-632---55°C~150°C TJTape & Reel (TR)2016-Active1 (Unlimited)---MOSFET (Metal Oxide)-------2.5W Ta 42W TcSingle-2.5W-11 nsN-Channel-100mOhm @ 8.4A, 5V2V @ 250μA870pF @ 25V14A Tc18nC @ 5V110ns4V 5V±10V41 ns23 ns14A10V60V----NoNon-RoHS Compliant-----60V14A-------Contains LeadD-Pak150°C-55°C60V870pF100mOhm100 mΩ
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