IRLR024PBF

Vishay Siliconix IRLR024PBF

Part Number:
IRLR024PBF
Manufacturer:
Vishay Siliconix
Ventron No:
2480588-IRLR024PBF
Description:
MOSFET N-CH 60V 14A DPAK
ECAD Model:
Datasheet:
IRLR024PBF

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Specifications
Vishay Siliconix IRLR024PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRLR024PBF.
  • Factory Lead Time
    8 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Weight
    1.437803g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2016
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Additional Feature
    LOGIC LEVEL COMPATIBLE
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    42W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    11 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    100m Ω @ 8.4A, 5V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    870pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    14A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    18nC @ 5V
  • Rise Time
    110ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4V 5V
  • Vgs (Max)
    ±10V
  • Fall Time (Typ)
    41 ns
  • Turn-Off Delay Time
    23 ns
  • Continuous Drain Current (ID)
    14A
  • Gate to Source Voltage (Vgs)
    10V
  • Drain to Source Breakdown Voltage
    60V
  • Pulsed Drain Current-Max (IDM)
    56A
  • Height
    2.39mm
  • Length
    6.73mm
  • Width
    6.22mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
IRLR024PBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 870pF @ 25V.This device conducts a continuous drain current (ID) of 14A, which is the maximum continuous current transistor can conduct.Using VGS=60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 60V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 23 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 56A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 11 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 10V.In order to reduce power consumption, this device uses a drive voltage of 4V 5V volts (4V 5V).

IRLR024PBF Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 23 ns
based on its rated peak drain current 56A.


IRLR024PBF Applications
There are a lot of Vishay Siliconix
IRLR024PBF applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IRLR024PBF More Descriptions
IRLR024 Series N-channel Surface Mount Power Mosfet 60V 14 Amp - D-Pak
Trans MOSFET N-CH 60V 14A 3-Pin(2 Tab) DPAK
Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
N channel ;VBRDSS 60 V; RDSon 100 mOhm ; ID 14 A
Product Comparison
The three parts on the right have similar specifications to IRLR024PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Additional Feature
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Series
    JESD-609 Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Current Rating
    Threshold Voltage
    JEDEC-95 Code
    Dual Supply Voltage
    Avalanche Energy Rating (Eas)
    Recovery Time
    Nominal Vgs
    REACH SVHC
    Lead Free
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Drain to Source Voltage (Vdss)
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    View Compare
  • IRLR024PBF
    IRLR024PBF
    8 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    1.437803g
    SILICON
    -55°C~150°C TJ
    Tube
    2016
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    LOGIC LEVEL COMPATIBLE
    MOSFET (Metal Oxide)
    GULL WING
    260
    40
    3
    R-PSSO-G2
    1
    1
    42W Tc
    Single
    ENHANCEMENT MODE
    2.5W
    DRAIN
    11 ns
    N-Channel
    SWITCHING
    100m Ω @ 8.4A, 5V
    2V @ 250μA
    870pF @ 25V
    14A Tc
    18nC @ 5V
    110ns
    4V 5V
    ±10V
    41 ns
    23 ns
    14A
    10V
    60V
    56A
    2.39mm
    6.73mm
    6.22mm
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLR2703PBF
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    -
    SILICON
    -55°C~175°C TJ
    Tube
    2003
    -
    Discontinued
    1 (Unlimited)
    2
    EAR99
    AVALANCHE RATED
    MOSFET (Metal Oxide)
    GULL WING
    260
    30
    -
    R-PSSO-G2
    1
    -
    45W Tc
    Single
    ENHANCEMENT MODE
    38W
    DRAIN
    8.5 ns
    N-Channel
    SWITCHING
    45m Ω @ 14A, 10V
    1V @ 250μA
    450pF @ 25V
    23A Tc
    15nC @ 4.5V
    140ns
    4V 10V
    ±16V
    20 ns
    12 ns
    23A
    16V
    30V
    96A
    2.39mm
    6.73mm
    6.22mm
    No
    ROHS3 Compliant
    HEXFET®
    e3
    45mOhm
    Matte Tin (Sn) - with Nickel (Ni) barrier
    FET General Purpose Power
    30V
    23A
    1V
    TO-252AA
    30V
    77 mJ
    97 ns
    1 V
    No SVHC
    Lead Free
    -
    -
    -
    -
    -
    -
    -
  • IRLR3105PBF
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    -
    SILICON
    -55°C~175°C TJ
    Tube
    2008
    -
    Discontinued
    1 (Unlimited)
    2
    EAR99
    AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
    MOSFET (Metal Oxide)
    GULL WING
    260
    30
    -
    R-PSSO-G2
    1
    -
    57W Tc
    Single
    ENHANCEMENT MODE
    57W
    DRAIN
    8 ns
    N-Channel
    SWITCHING
    37m Ω @ 15A, 10V
    3V @ 250μA
    710pF @ 25V
    25A Tc
    20nC @ 5V
    57ns
    5V 10V
    ±16V
    37 ns
    25 ns
    25A
    16V
    55V
    -
    2.39mm
    6.73mm
    6.223mm
    No
    ROHS3 Compliant
    HEXFET®
    e3
    37mOhm
    Matte Tin (Sn) - with Nickel (Ni) barrier
    FET General Purpose Power
    55V
    25A
    3V
    TO-252AA
    55V
    -
    -
    3 V
    No SVHC
    Lead Free
    -
    -
    -
    -
    -
    -
    -
  • IRLR024TR
    21 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    2
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2016
    -
    Active
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    2.5W Ta 42W Tc
    Single
    -
    2.5W
    -
    11 ns
    N-Channel
    -
    100mOhm @ 8.4A, 5V
    2V @ 250μA
    870pF @ 25V
    14A Tc
    18nC @ 5V
    110ns
    4V 5V
    ±10V
    41 ns
    23 ns
    14A
    10V
    60V
    -
    -
    -
    -
    No
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    60V
    14A
    -
    -
    -
    -
    -
    -
    -
    Contains Lead
    D-Pak
    150°C
    -55°C
    60V
    870pF
    100mOhm
    100 mΩ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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