IRLR024

Vishay Siliconix IRLR024

Part Number:
IRLR024
Manufacturer:
Vishay Siliconix
Ventron No:
2480083-IRLR024
Description:
MOSFET N-CH 60V 14A DPAK
ECAD Model:
Datasheet:
IRLR024

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  • IRLR024 Detail Images
  • IRLR024 Detail Images
Specifications
Vishay Siliconix IRLR024 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRLR024.
  • Factory Lead Time
    18 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Supplier Device Package
    D-Pak
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2017
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Power Dissipation-Max
    2.5W Ta 42W Tc
  • Element Configuration
    Single
  • Power Dissipation
    2.5W
  • Turn On Delay Time
    11 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    100mOhm @ 8.4A, 5V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    870pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    14A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    18nC @ 5V
  • Rise Time
    110ns
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    4V 5V
  • Vgs (Max)
    ±10V
  • Fall Time (Typ)
    41 ns
  • Turn-Off Delay Time
    23 ns
  • Continuous Drain Current (ID)
    14A
  • Gate to Source Voltage (Vgs)
    10V
  • Input Capacitance
    870pF
  • Drain to Source Resistance
    100mOhm
  • Rds On Max
    100 mΩ
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
IRLR024 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 870pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 14A amps.It is [23 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 100mOhm.A turn-on delay time of 11 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.To operate this transistor, you will need a 60V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4V 5V).

IRLR024 Features
a continuous drain current (ID) of 14A
the turn-off delay time is 23 ns
single MOSFETs transistor is 100mOhm
a 60V drain to source voltage (Vdss)


IRLR024 Applications
There are a lot of Vishay Siliconix
IRLR024 applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IRLR024 More Descriptions
MOSFET N-CH 60V 14A DPAK
CoC and 2-years warranty / RFQ for pricing
LOGIC MOSFET N-CHANNEL 60V
IRLR024 Detail Images
Product Comparison
The three parts on the right have similar specifications to IRLR024.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Radiation Hardening
    RoHS Status
    Transistor Element Material
    Series
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Operating Mode
    Case Connection
    Transistor Application
    Threshold Voltage
    JEDEC-95 Code
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Dual Supply Voltage
    Avalanche Energy Rating (Eas)
    Recovery Time
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Lead Free
    Surface Mount
    Configuration
    Drain Current-Max (Abs) (ID)
    View Compare
  • IRLR024
    IRLR024
    18 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    D-Pak
    -55°C~150°C TJ
    Tube
    2017
    Active
    1 (Unlimited)
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    2.5W Ta 42W Tc
    Single
    2.5W
    11 ns
    N-Channel
    100mOhm @ 8.4A, 5V
    2V @ 250μA
    870pF @ 25V
    14A Tc
    18nC @ 5V
    110ns
    60V
    4V 5V
    ±10V
    41 ns
    23 ns
    14A
    10V
    870pF
    100mOhm
    100 mΩ
    No
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLR2703PBF
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    -
    -55°C~175°C TJ
    Tube
    2003
    Discontinued
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    1
    45W Tc
    Single
    38W
    8.5 ns
    N-Channel
    45m Ω @ 14A, 10V
    1V @ 250μA
    450pF @ 25V
    23A Tc
    15nC @ 4.5V
    140ns
    -
    4V 10V
    ±16V
    20 ns
    12 ns
    23A
    16V
    -
    -
    -
    No
    ROHS3 Compliant
    SILICON
    HEXFET®
    e3
    2
    EAR99
    45mOhm
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED
    FET General Purpose Power
    30V
    GULL WING
    260
    23A
    30
    R-PSSO-G2
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    1V
    TO-252AA
    30V
    96A
    30V
    77 mJ
    97 ns
    1 V
    2.39mm
    6.73mm
    6.22mm
    No SVHC
    Lead Free
    -
    -
    -
  • IRLR014NTRR
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    2001
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    28W Tc
    -
    -
    -
    N-Channel
    140m Ω @ 6A, 10V
    1V @ 250μA
    265pF @ 25V
    10A Tc
    7.9nC @ 5V
    -
    55V
    4.5V 10V
    ±16V
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    HEXFET®
    -
    -
    -
    -
    -
    -
    FET General Purpose Power
    -
    -
    -
    -
    -
    -
    ENHANCEMENT MODE
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    YES
    Single
    10A
  • IRLR024TRR
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    D-Pak
    -55°C~150°C TJ
    Tape & Reel (TR)
    1997
    Active
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    2.5W Ta 42W Tc
    -
    -
    -
    N-Channel
    100mOhm @ 8.4A, 5V
    2V @ 250μA
    870pF @ 25V
    14A Tc
    18nC @ 5V
    -
    60V
    4V 5V
    ±10V
    -
    -
    14A
    -
    870pF
    -
    100 mΩ
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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