Vishay Siliconix IRLR024
- Part Number:
- IRLR024
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2480083-IRLR024
- Description:
- MOSFET N-CH 60V 14A DPAK
- Datasheet:
- IRLR024
Vishay Siliconix IRLR024 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRLR024.
- Factory Lead Time18 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Supplier Device PackageD-Pak
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2017
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Power Dissipation-Max2.5W Ta 42W Tc
- Element ConfigurationSingle
- Power Dissipation2.5W
- Turn On Delay Time11 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs100mOhm @ 8.4A, 5V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds870pF @ 25V
- Current - Continuous Drain (Id) @ 25°C14A Tc
- Gate Charge (Qg) (Max) @ Vgs18nC @ 5V
- Rise Time110ns
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)4V 5V
- Vgs (Max)±10V
- Fall Time (Typ)41 ns
- Turn-Off Delay Time23 ns
- Continuous Drain Current (ID)14A
- Gate to Source Voltage (Vgs)10V
- Input Capacitance870pF
- Drain to Source Resistance100mOhm
- Rds On Max100 mΩ
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
IRLR024 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 870pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 14A amps.It is [23 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 100mOhm.A turn-on delay time of 11 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.To operate this transistor, you will need a 60V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4V 5V).
IRLR024 Features
a continuous drain current (ID) of 14A
the turn-off delay time is 23 ns
single MOSFETs transistor is 100mOhm
a 60V drain to source voltage (Vdss)
IRLR024 Applications
There are a lot of Vishay Siliconix
IRLR024 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 870pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 14A amps.It is [23 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 100mOhm.A turn-on delay time of 11 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.To operate this transistor, you will need a 60V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4V 5V).
IRLR024 Features
a continuous drain current (ID) of 14A
the turn-off delay time is 23 ns
single MOSFETs transistor is 100mOhm
a 60V drain to source voltage (Vdss)
IRLR024 Applications
There are a lot of Vishay Siliconix
IRLR024 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IRLR024 More Descriptions
MOSFET N-CH 60V 14A DPAK
CoC and 2-years warranty / RFQ for pricing
LOGIC MOSFET N-CHANNEL 60V
CoC and 2-years warranty / RFQ for pricing
LOGIC MOSFET N-CHANNEL 60V
The three parts on the right have similar specifications to IRLR024.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyNumber of ElementsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Input CapacitanceDrain to Source ResistanceRds On MaxRadiation HardeningRoHS StatusTransistor Element MaterialSeriesJESD-609 CodeNumber of TerminationsECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)JESD-30 CodeOperating ModeCase ConnectionTransistor ApplicationThreshold VoltageJEDEC-95 CodeDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Dual Supply VoltageAvalanche Energy Rating (Eas)Recovery TimeNominal VgsHeightLengthWidthREACH SVHCLead FreeSurface MountConfigurationDrain Current-Max (Abs) (ID)View Compare
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IRLR02418 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633D-Pak-55°C~150°C TJTube2017Active1 (Unlimited)150°C-55°CMOSFET (Metal Oxide)12.5W Ta 42W TcSingle2.5W11 nsN-Channel100mOhm @ 8.4A, 5V2V @ 250μA870pF @ 25V14A Tc18nC @ 5V110ns60V4V 5V±10V41 ns23 ns14A10V870pF100mOhm100 mΩNoNon-RoHS Compliant-----------------------------------
-
-Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633--55°C~175°C TJTube2003Discontinued1 (Unlimited)--MOSFET (Metal Oxide)145W TcSingle38W8.5 nsN-Channel45m Ω @ 14A, 10V1V @ 250μA450pF @ 25V23A Tc15nC @ 4.5V140ns-4V 10V±16V20 ns12 ns23A16V---NoROHS3 CompliantSILICONHEXFET®e32EAR9945mOhmMatte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATEDFET General Purpose Power30VGULL WING26023A30R-PSSO-G2ENHANCEMENT MODEDRAINSWITCHING1VTO-252AA30V96A30V77 mJ97 ns1 V2.39mm6.73mm6.22mmNo SVHCLead Free---
-
--Surface MountTO-252-3, DPak (2 Leads Tab), SC-63---55°C~175°C TJTape & Reel (TR)2001Obsolete1 (Unlimited)--MOSFET (Metal Oxide)-28W Tc---N-Channel140m Ω @ 6A, 10V1V @ 250μA265pF @ 25V10A Tc7.9nC @ 5V-55V4.5V 10V±16V--------Non-RoHS Compliant-HEXFET®------FET General Purpose Power------ENHANCEMENT MODE---------------YESSingle10A
-
-Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63-D-Pak-55°C~150°C TJTape & Reel (TR)1997Active1 (Unlimited)--MOSFET (Metal Oxide)-2.5W Ta 42W Tc---N-Channel100mOhm @ 8.4A, 5V2V @ 250μA870pF @ 25V14A Tc18nC @ 5V-60V4V 5V±10V--14A-870pF-100 mΩ-Non-RoHS Compliant----------------------------------
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