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IRL3803SPBF

Infineon Technologies IRL3803SPBF

Part Number:
IRL3803SPBF
Manufacturer:
Infineon Technologies
Ventron No:
3554639-IRL3803SPBF
Description:
MOSFET N-CH 30V 140A D2PAK
ECAD Model:
Datasheet:
IRL3803SPBF

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Specifications
Infineon Technologies IRL3803SPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL3803SPBF.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2002
  • JESD-609 Code
    e3
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Additional Feature
    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    3.8W Ta 200W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    6m Ω @ 71A, 10V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    5000pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    140A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    140nC @ 4.5V
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±16V
  • Drain Current-Max (Abs) (ID)
    140A
  • Drain-source On Resistance-Max
    0.006Ohm
  • Pulsed Drain Current-Max (IDM)
    470A
  • DS Breakdown Voltage-Min
    30V
  • Avalanche Energy Rating (Eas)
    610 mJ
  • RoHS Status
    ROHS3 Compliant
Description
IRL3803SPBF Description
IRL3803SPBF is a 30v HEXFET? Power MOSFET. The IRL3803SPBF HEXFET from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.  
IRL3803SPBF Features
Logic-Level Gate Drive
Advanced Process Technology
Surface Mount (IRL3803S)
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free

IRL3803SPBF Applications
DC motor drive
High-efficiency synchronous rectification in SMPS
Uninterruptible power supply
High-speed power switching
Hard switched and high-frequency circuits
IRL3803SPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.006Ohm;ID 140A;D2Pak;PD 200W;VGS /-16V
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Trans MOSFET N-CH 30V 140A 3-Pin(2 Tab) D2PAK - Rail/Tube
MOSFET Operating temperature: -55... 175 °C Housing type: D2PAK Polarity: N Power dissipation: 200 W
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:140A; On Resistance, Rds(on):6mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: Yes
MOSFET, N, 30V, 140A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:150W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:140A; Current Temperature:25°C; External Depth:15.49mm; External Length / Height:4.69mm; External Width:10.54mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W; No. of Transistors:1; Package / Case:D2-PAK; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Power Dissipation on 1 Sq. PCB:3.7W; Pulse Current Idm:470A; SMD Marking:L3803S; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V
Product Comparison
The three parts on the right have similar specifications to IRL3803SPBF.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    RoHS Status
    Mount
    Number of Pins
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Current Rating
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    Radiation Hardening
    Lead Free
    Recovery Time
    Nominal Vgs
    REACH SVHC
    View Compare
  • IRL3803SPBF
    IRL3803SPBF
    Infineon Technologies
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    YES
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2002
    e3
    Discontinued
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
    FET General Purpose Power
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    260
    30
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    3.8W Ta 200W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    6m Ω @ 71A, 10V
    1V @ 250μA
    5000pF @ 25V
    140A Tc
    140nC @ 4.5V
    30V
    4.5V 10V
    ±16V
    140A
    0.006Ohm
    470A
    30V
    610 mJ
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRL3303SPBF
    IRL3303SPBF
    Infineon Technologies
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~175°C TJ
    Tube
    HEXFET®
    2004
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    3.8W Ta 68W Tc
    -
    -
    N-Channel
    -
    26mOhm @ 20A, 10V
    1V @ 250μA
    870pF @ 25V
    38A Tc
    26nC @ 4.5V
    30V
    4.5V 10V
    ±16V
    -
    -
    -
    -
    -
    RoHS Compliant
    Surface Mount
    3
    D2PAK
    175°C
    -55°C
    30V
    38A
    Single
    68W
    7.4 ns
    200ns
    36 ns
    14 ns
    38A
    16V
    30V
    870pF
    40mOhm
    26 mΩ
    4.572mm
    10.668mm
    9.65mm
    No
    Lead Free
    -
    -
    -
    IRL3803SPBF vs IRL3303SPBF
  • IRL3202PBF
    IRL3202PBF
    Infineon Technologies
    Through Hole
    TO-220-3
    -
    -
    -55°C~150°C TJ
    Tube
    HEXFET®
    2004
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    69W Tc
    -
    -
    N-Channel
    -
    16mOhm @ 29A, 7V
    700mV @ 250μA
    2000pF @ 15V
    48A Tc
    43nC @ 4.5V
    20V
    4.5V 7V
    ±10V
    -
    -
    -
    -
    -
    RoHS Compliant
    Through Hole
    3
    TO-220AB
    150°C
    -55°C
    20V
    48A
    Single
    69W
    8.5 ns
    100ns
    82 ns
    12 ns
    48A
    10V
    20V
    2nF
    19mOhm
    16 mΩ
    15.24mm
    10.5156mm
    4.69mm
    -
    Lead Free
    100 ns
    700 mV
    No SVHC
    IRL3803SPBF vs IRL3202PBF
  • IRL3202S
    IRL3202S
    Infineon Technologies
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    YES
    SILICON
    -55°C~150°C TJ
    Tube
    HEXFET®
    1998
    e3
    Obsolete
    1 (Unlimited)
    2
    EAR99
    MATTE TIN OVER NICKEL
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    260
    30
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    69W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    16m Ω @ 29A, 7V
    700mV @ 250μA
    2000pF @ 15V
    48A Tc
    43nC @ 4.5V
    20V
    4.5V 7V
    ±10V
    48A
    0.019Ohm
    190A
    20V
    270 mJ
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRL3803SPBF vs IRL3202S
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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