Infineon Technologies IRL3803S

Name: IRL3803S
Brand: Infineon Technologies
SKU: 3554628-IRL3803S
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRL3803S

Manufacturer:: Infineon Technologies

Ventron No:: 3554628-IRL3803S

Description:: MOSFET N-CH 30V 140A D2PAK

ECAD Model:

Datasheet:: IRL3803S

Specifications

Infineon Technologies IRL3803S technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL3803S.

Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2002
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
3.8W Ta 200W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
6m Ω @ 71A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5000pF @ 25V
Current - Continuous Drain (Id) @ 25°C
140A Tc
Gate Charge (Qg) (Max) @ Vgs
140nC @ 4.5V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±16V
Drain Current-Max (Abs) (ID)
140A
Drain-source On Resistance-Max
0.006Ohm
Pulsed Drain Current-Max (IDM)
470A
DS Breakdown Voltage-Min
30V
Avalanche Energy Rating (Eas)
610 mJ
RoHS Status
Non-RoHS Compliant

Description

IRL3803S Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 610 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5000pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [140A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 470A.The DS breakdown voltage should be maintained above 30V to maintain normal operation.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

IRL3803S Features
the avalanche energy rating (Eas) is 610 mJ
based on its rated peak drain current 470A.
a 30V drain to source voltage (Vdss)

IRL3803S Applications
There are a lot of Infineon Technologies
IRL3803S applications of single MOSFETs transistors.

Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies

IRL3803S More Descriptions

Power MOSFET(Vdss=30V, Rds(on)=0.006ohm, Id=140A⑥) | MOSFET N-CH 30V 140A D2PAK
Trans MOSFET N-CH 30V 140A 3-Pin(2 Tab) D2PAK
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:140A; On-Resistance, Rds(on):6mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK; Drain Source On Resistance @ 10V:6mohm RoHS Compliant: No

Product Comparison

The three parts on the right have similar specifications to IRL3803S.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Additional Feature

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Mount

Number of Pins

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Current Rating

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Radiation Hardening

Lead Free

JESD-609 Code

ECCN Code

Terminal Finish

Subcategory

Qualification Status

View Compare
IRL3803S

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

YES

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2002

Obsolete

1 (Unlimited)

2

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

NOT SPECIFIED

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

3.8W Ta 200W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

6m Ω @ 71A, 10V

1V @ 250μA

5000pF @ 25V

140A Tc

140nC @ 4.5V

30V

4.5V 10V

±16V

140A

0.006Ohm

470A

30V

610 mJ

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRL3502PBF

Infineon Technologies

Through Hole

TO-220-3

-

-

-55°C~150°C TJ

Tube

HEXFET®

2003

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

1

-

140W Tc

-

-

N-Channel

-

7mOhm @ 64A, 7V

700mV @ 250μA

4700pF @ 15V

110A Tc

110nC @ 4.5V

20V

4.5V 7V

±10V

-

-

-

-

-

RoHS Compliant

Through Hole

3

TO-220AB

150°C

-55°C

20V

110A

Single

140W

10 ns

140ns

130 ns

96 ns

110A

10V

20V

4.7nF

8mOhm

7 mΩ

No

Lead Free

-

-

-

-

-

IRL3803S vs IRL3502PBF
IRL3202S

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

YES

SILICON

-55°C~150°C TJ

Tube

HEXFET®

1998

Obsolete

1 (Unlimited)

2

-

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

30

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

69W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

16m Ω @ 29A, 7V

700mV @ 250μA

2000pF @ 15V

48A Tc

43nC @ 4.5V

20V

4.5V 7V

±10V

48A

0.019Ohm

190A

20V

270 mJ

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

e3

EAR99

MATTE TIN OVER NICKEL

FET General Purpose Power

Not Qualified

IRL3803S vs IRL3202S
IRL3103L

Infineon Technologies

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

-

-55°C~175°C TJ

Tube

HEXFET®

2002

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

94W Tc

-

-

N-Channel

-

12m Ω @ 34A, 10V

1V @ 250μA

1650pF @ 25V

64A Tc

33nC @ 4.5V

30V

4.5V 10V

±16V

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

EAR99

-

-

-

IRL3803S vs IRL3103L