Infineon Technologies IRL3715SPBF

Name: IRL3715SPBF
Brand: Infineon Technologies
SKU: 2853735-IRL3715SPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRL3715SPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2853735-IRL3715SPBF

Description:: MOSFET N-CH 20V 54A D2PAK

ECAD Model:

Datasheet:: IRL3715(S,L)PbF

Specifications

Infineon Technologies IRL3715SPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL3715SPBF.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Supplier Device Package
D2PAK
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2004
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Voltage - Rated DC
20V
Technology
MOSFET (Metal Oxide)
Current Rating
54A
Number of Elements
1
Power Dissipation-Max
3.8W Ta 71W Tc
Power Dissipation
71W
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
14mOhm @ 26A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1060pF @ 10V
Current - Continuous Drain (Id) @ 25°C
54A Tc
Gate Charge (Qg) (Max) @ Vgs
17nC @ 4.5V
Rise Time
73ns
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
54A
Threshold Voltage
3V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
20V
Input Capacitance
1.06nF
Drain to Source Resistance
20mOhm
Rds On Max
14 mΩ
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

IRL3715SPBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1060pF @ 10V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 54A.With a drain-source breakdown voltage of 20V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 20V.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 20mOhm exists between the drain and source.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.3V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 20V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

IRL3715SPBF Features
a continuous drain current (ID) of 54A
a drain-to-source breakdown voltage of 20V voltage
single MOSFETs transistor is 20mOhm
a threshold voltage of 3V
a 20V drain to source voltage (Vdss)

IRL3715SPBF Applications
There are a lot of Infineon Technologies
IRL3715SPBF applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

IRL3715SPBF More Descriptions

Trans MOSFET N-CH 20V 54A 3-Pin(2 Tab) D2PAK
MOSFET, 20V, 54A, 14 MOHM, 11 NC QG, LOGIC LEVEL, D2-PAK
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:54A; On Resistance, Rds(on):14mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes
MOSFET, N, 20V, 54A, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:54A; Resistance, Rds On:0.014ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:D2-PAK; Current, Idm Pulse:210A; Power Dissipation:71W; Power, Pd:71W; Resistance, Rds on @ Vgs = 10V:0.014ohm; Thermal Resistance, Junction to Case A:2.1°C/W; Voltage, Vds:20V; Voltage, Vds Max:20V; Voltage, Vgs th Max:3V

Product Comparison

The three parts on the right have similar specifications to IRL3715SPBF.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Power Dissipation-Max

Power Dissipation

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

REACH SVHC

RoHS Status

Lead Free

Element Configuration

Turn On Delay Time

Fall Time (Typ)

Turn-Off Delay Time

Height

Length

Width

Radiation Hardening

Surface Mount

Transistor Element Material

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Operating Mode

Case Connection

Transistor Application

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

View Compare
IRL3715SPBF

Infineon Technologies

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

D2PAK

-55°C~175°C TJ

Tube

HEXFET®

2004

Obsolete

1 (Unlimited)

175°C

-55°C

20V

MOSFET (Metal Oxide)

54A

1

3.8W Ta 71W Tc

71W

N-Channel

14mOhm @ 26A, 10V

3V @ 250μA

1060pF @ 10V

54A Tc

17nC @ 4.5V

73ns

20V

4.5V 10V

±20V

54A

3V

20V

20V

1.06nF

20mOhm

14 mΩ

No SVHC

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRL3303SPBF

Infineon Technologies

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

D2PAK

-55°C~175°C TJ

Tube

HEXFET®

2004

Obsolete

1 (Unlimited)

175°C

-55°C

30V

MOSFET (Metal Oxide)

38A

-

3.8W Ta 68W Tc

68W

N-Channel

26mOhm @ 20A, 10V

1V @ 250μA

870pF @ 25V

38A Tc

26nC @ 4.5V

200ns

30V

4.5V 10V

±16V

38A

-

16V

30V

870pF

40mOhm

26 mΩ

-

RoHS Compliant

Lead Free

Single

7.4 ns

36 ns

14 ns

4.572mm

10.668mm

9.65mm

No

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRL3715SPBF vs IRL3303SPBF
IRL3502PBF

Infineon Technologies

Through Hole

Through Hole

TO-220-3

3

TO-220AB

-55°C~150°C TJ

Tube

HEXFET®

2003

Obsolete

1 (Unlimited)

150°C

-55°C

20V

MOSFET (Metal Oxide)

110A

1

140W Tc

140W

N-Channel

7mOhm @ 64A, 7V

700mV @ 250μA

4700pF @ 15V

110A Tc

110nC @ 4.5V

140ns

20V

4.5V 7V

±10V

110A

-

10V

20V

4.7nF

8mOhm

7 mΩ

-

RoHS Compliant

Lead Free

Single

10 ns

130 ns

96 ns

-

-

-

No

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRL3715SPBF vs IRL3502PBF
IRL3202S

Infineon Technologies

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~150°C TJ

Tube

HEXFET®

1998

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

1

69W Tc

-

N-Channel

16m Ω @ 29A, 7V

700mV @ 250μA

2000pF @ 15V

48A Tc

43nC @ 4.5V

-

20V

4.5V 7V

±10V

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

YES

SILICON

e3

2

EAR99

MATTE TIN OVER NICKEL

FET General Purpose Power

SINGLE

GULL WING

260

30

R-PSSO-G2

Not Qualified

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

48A

0.019Ohm

190A

20V

270 mJ

IRL3715SPBF vs IRL3202S