Infineon Technologies IRL3713STRLPBF
- Part Number:
- IRL3713STRLPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3554214-IRL3713STRLPBF
- Description:
- MOSFET N-CH 30V 260A D2PAK
- ECAD Model:
-
- Datasheet:
- IRL3713STRLPBF
Infineon Technologies IRL3713STRLPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL3713STRLPBF.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2003
- JESD-609 Codee3
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance3MOhm
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max330W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation330W
- Case ConnectionDRAIN
- Turn On Delay Time16 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs3m Ω @ 38A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds5890pF @ 15V
- Current - Continuous Drain (Id) @ 25°C260A Tc
- Gate Charge (Qg) (Max) @ Vgs110nC @ 4.5V
- Rise Time160ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)57 ns
- Turn-Off Delay Time40 ns
- Continuous Drain Current (ID)260A
- Threshold Voltage2.5V
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)75A
- Drain to Source Breakdown Voltage30V
- Dual Supply Voltage30V
- Nominal Vgs2.5 V
- Height4.826mm
- Length10.668mm
- Width9.65mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRL3713STRLPBF Description
IRL3713STRLPBF is a single HEXFET Power MOSFET transistor from the manufacturer of Infineon Technologies with a voltage of 30V. The operating temperature of IRL3713STRLPBF is -55°C~175°C TJ and its maximum power dissipation are 330W. IRL3713STRLPBF has 3 pins and it is available in TO-263-3, D2Pak (2 Leads Tab), and TO-263AB packaging way. The FET Type of IRL3713STRLPBF is N-channel and its Current Rating is 260A.
IRL3713STRLPBF Features
Ultra-Low Gate Impedance
Very Low RDS(on) at 4.5V VGS
Fully Characterized Avalanche Voltage and Current
Lead-Free
IRL3713STRLPBF Applications
High-Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use
High-Frequency Buck Converters for Computer Processor Power
100% RG Tested
IRL3713STRLPBF is a single HEXFET Power MOSFET transistor from the manufacturer of Infineon Technologies with a voltage of 30V. The operating temperature of IRL3713STRLPBF is -55°C~175°C TJ and its maximum power dissipation are 330W. IRL3713STRLPBF has 3 pins and it is available in TO-263-3, D2Pak (2 Leads Tab), and TO-263AB packaging way. The FET Type of IRL3713STRLPBF is N-channel and its Current Rating is 260A.
IRL3713STRLPBF Features
Ultra-Low Gate Impedance
Very Low RDS(on) at 4.5V VGS
Fully Characterized Avalanche Voltage and Current
Lead-Free
IRL3713STRLPBF Applications
High-Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use
High-Frequency Buck Converters for Computer Processor Power
100% RG Tested
IRL3713STRLPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.6Milliohms;ID 260A;D2Pak;PD 330W;VGS /-2
Trans MOSFET N-CH 30V 260A 3-Pin(2 Tab) D2PAK T/R / MOSFET N-CH 30V 260A D2PAK
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Single N-Channel 30 V 4 mOhm 110 nC HEXFET® Power Mosfet - D2PAK
Benefits: RoHS Compliant; Industry-leading quality; Fully Avalanche Rated; Logic Level
IRL3713STRLPBF,MOSFET, 30V, 20 0A, 3 MOHM, 75 NC QG, LOGIC L
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:200A; On Resistance Rds(On):0.0026Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V Rohs Compliant: Yes
MOSFET, N, 30V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:330W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 100°C:170A; Cont Current Id @ 25°C:200A; Current Id Max:260A; Package / Case:D2-PAK; Power Dissipation Pd:200W; Power Dissipation Pd:330W; Pulse Current Idm:1040A; Rth:0.45; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V; Voltage Vgs th Min:1V
Trans MOSFET N-CH 30V 260A 3-Pin(2 Tab) D2PAK T/R / MOSFET N-CH 30V 260A D2PAK
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Single N-Channel 30 V 4 mOhm 110 nC HEXFET® Power Mosfet - D2PAK
Benefits: RoHS Compliant; Industry-leading quality; Fully Avalanche Rated; Logic Level
IRL3713STRLPBF,MOSFET, 30V, 20 0A, 3 MOHM, 75 NC QG, LOGIC L
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:200A; On Resistance Rds(On):0.0026Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V Rohs Compliant: Yes
MOSFET, N, 30V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:330W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 100°C:170A; Cont Current Id @ 25°C:200A; Current Id Max:260A; Package / Case:D2-PAK; Power Dissipation Pd:200W; Power Dissipation Pd:330W; Pulse Current Idm:1040A; Rth:0.45; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V; Voltage Vgs th Min:1V
The three parts on the right have similar specifications to IRL3713STRLPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageDual Supply VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountQualification StatusDrain to Source Voltage (Vdss)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Supplier Device PackageView Compare
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IRL3713STRLPBF14 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON-55°C~175°C TJTape & Reel (TR)HEXFET®2003e3Not For New Designs1 (Unlimited)2SMD/SMTEAR993MOhmMatte Tin (Sn) - with Nickel (Ni) barrierFET General Purpose PowerMOSFET (Metal Oxide)SINGLEGULL WING26030R-PSSO-G21SINGLE WITH BUILT-IN DIODE330W TcENHANCEMENT MODE330WDRAIN16 nsN-ChannelSWITCHING3m Ω @ 38A, 10V2.5V @ 250μA5890pF @ 15V260A Tc110nC @ 4.5V160ns4.5V 10V±20V57 ns40 ns260A2.5V20V75A30V30V2.5 V4.826mm10.668mm9.65mmNo SVHCNoROHS3 CompliantLead Free--------- -
--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~150°C TJTubeHEXFET®1998e3Obsolete1 (Unlimited)2-EAR99-MATTE TIN OVER NICKELFET General Purpose PowerMOSFET (Metal Oxide)SINGLEGULL WING26030R-PSSO-G21SINGLE WITH BUILT-IN DIODE69W TcENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING16m Ω @ 29A, 7V700mV @ 250μA2000pF @ 15V48A Tc43nC @ 4.5V-4.5V 7V±10V-----48A--------Non-RoHS Compliant-YESNot Qualified20V0.019Ohm190A20V270 mJ-
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--Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA---55°C~175°C TJTubeHEXFET®1997-Obsolete1 (Unlimited)------MOSFET (Metal Oxide)-------3.8W Ta 68W Tc----N-Channel-26mOhm @ 20A, 10V1V @ 250μA870pF @ 25V38A Tc26nC @ 4.5V-4.5V 10V±16V--------------Non-RoHS Compliant---30V----TO-262
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--Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA---55°C~175°C TJTubeHEXFET®2002-Obsolete1 (Unlimited)--EAR99---MOSFET (Metal Oxide)-------94W Tc----N-Channel-12m Ω @ 34A, 10V1V @ 250μA1650pF @ 25V64A Tc33nC @ 4.5V-4.5V 10V±16V--------------Non-RoHS Compliant---30V-----
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