Infineon Technologies IRL3705ZPBF

Name: IRL3705ZPBF
Brand: Infineon Technologies
SKU: 2483115-IRL3705ZPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRL3705ZPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2483115-IRL3705ZPBF

Description:: MOSFET N-CH 55V 75A TO-220AB

ECAD Model:

Datasheet:: IRL3705ZPBF

Specifications

Infineon Technologies IRL3705ZPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL3705ZPBF.

Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Supplier Device Package
TO-220AB
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2004
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Resistance
8mOhm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Voltage - Rated DC
55V
Technology
MOSFET (Metal Oxide)
Current Rating
75A
Number of Elements
1
Power Dissipation-Max
130W Tc
Element Configuration
Single
Power Dissipation
130W
Turn On Delay Time
17 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
8mOhm @ 52A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2880pF @ 25V
Current - Continuous Drain (Id) @ 25°C
75A Tc
Gate Charge (Qg) (Max) @ Vgs
60nC @ 5V
Rise Time
240ns
Drain to Source Voltage (Vdss)
55V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±16V
Fall Time (Typ)
83 ns
Turn-Off Delay Time
26 ns
Continuous Drain Current (ID)
75A
Threshold Voltage
3V
Gate to Source Voltage (Vgs)
16V
Drain to Source Breakdown Voltage
55V
Dual Supply Voltage
55V
Input Capacitance
2.88nF
Recovery Time
24 ns
Drain to Source Resistance
12mOhm
Rds On Max
8 mΩ
Nominal Vgs
3 V
Height
9.017mm
Length
10.6426mm
Width
4.82mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRL3705ZPBF Description
The IRL3705ZPBF is a HEXFET? N-channel Power MOSFET with ultra-low ON-resistance per silicon area thanks to cutting-edge fabrication techniques. A 175°C junction working temperature, quick switching speed, and increased repeating avalanche rating are all included in this design. These characteristics combine to make this design a highly efficient and dependable device that may be used in a wide range of applications.

IRL3705ZPBF Features
Lead-Free
Logic Level
Fast Switching
Ultra Low On-Resistance
Advanced Process Technology
175°C Operating Temperature
Repetitive Avalanche Allowed up to Tjmax

IRL3705ZPBF Applications
Industrial
Power Management

IRL3705ZPBF More Descriptions

55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
MOSFET, 55V, 86A, 8 MOHM, 40 NC QG, LOGIC LEVEL, TO-220AB
Single N-Channel 55 V 12 mOhm 60 nC HEXFET® Power Mosfet - TO-220-3
Trans MOSFET N-CH Si 55V 86A 3-Pin(3 Tab) TO-220AB Tube
Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 55V, 86A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:86A; Drain Source Voltage Vds:55V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:130W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Junction to Case Thermal Resistance A:1.14°C/W; On State resistance @ Vgs = 10V:8mohm; Package / Case:TO-220AB; Power Dissipation Pd:130W; Power Dissipation Pd:130W; Pulse Current Idm:340A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V

Product Comparison

The three parts on the right have similar specifications to IRL3705ZPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Resistance

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Power Dissipation-Max

Element Configuration

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Input Capacitance

Recovery Time

Drain to Source Resistance

Rds On Max

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Transistor Element Material

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Operating Mode

Case Connection

Transistor Application

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

View Compare
IRL3705ZPBF

Infineon Technologies

12 Weeks

Through Hole

Through Hole

TO-220-3

3

TO-220AB

-55°C~175°C TJ

Tube

HEXFET®

2004

Active

1 (Unlimited)

8mOhm

175°C

-55°C

55V

MOSFET (Metal Oxide)

75A

1

130W Tc

Single

130W

17 ns

N-Channel

8mOhm @ 52A, 10V

3V @ 250μA

2880pF @ 25V

75A Tc

60nC @ 5V

240ns

55V

4.5V 10V

±16V

83 ns

26 ns

75A

3V

16V

55V

55V

2.88nF

24 ns

12mOhm

8 mΩ

3 V

9.017mm

10.6426mm

4.82mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRL3502PBF

Infineon Technologies

-

Through Hole

Through Hole

TO-220-3

3

TO-220AB

-55°C~150°C TJ

Tube

HEXFET®

2003

Obsolete

1 (Unlimited)

-

150°C

-55°C

20V

MOSFET (Metal Oxide)

110A

1

140W Tc

Single

140W

10 ns

N-Channel

7mOhm @ 64A, 7V

700mV @ 250μA

4700pF @ 15V

110A Tc

110nC @ 4.5V

140ns

20V

4.5V 7V

±10V

130 ns

96 ns

110A

-

10V

20V

-

4.7nF

-

8mOhm

7 mΩ

-

-

-

-

-

No

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRL3705ZPBF vs IRL3502PBF
IRL3502SPBF

Infineon Technologies

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

D2PAK

-55°C~150°C TJ

Tube

HEXFET®

2003

Obsolete

1 (Unlimited)

-

150°C

-55°C

20V

MOSFET (Metal Oxide)

110A

-

140W Tc

Single

140W

10 ns

N-Channel

7mOhm @ 64A, 7V

700mV @ 250μA

4700pF @ 15V

110A Tc

110nC @ 4.5V

140ns

20V

4.5V 7V

±10V

130 ns

96 ns

110A

-

10V

20V

-

4.7nF

-

7mOhm

7 mΩ

-

4.83mm

10.67mm

9.65mm

-

No

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRL3705ZPBF vs IRL3502SPBF
IRL3202S

Infineon Technologies

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~150°C TJ

Tube

HEXFET®

1998

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

1

69W Tc

-

-

-

N-Channel

16m Ω @ 29A, 7V

700mV @ 250μA

2000pF @ 15V

48A Tc

43nC @ 4.5V

-

20V

4.5V 7V

±10V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

YES

SILICON

e3

2

EAR99

MATTE TIN OVER NICKEL

FET General Purpose Power

SINGLE

GULL WING

260

30

R-PSSO-G2

Not Qualified

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

48A

0.019Ohm

190A

20V

270 mJ

IRL3705ZPBF vs IRL3202S