Infineon Technologies IRL3303S
- Part Number:
- IRL3303S
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2492436-IRL3303S
- Description:
- MOSFET N-CH 30V 38A D2PAK
- ECAD Model:
-
- Datasheet:
- IRL3303S
Infineon Technologies IRL3303S technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL3303S.
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Supplier Device PackageD2PAK
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published1997
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max3.8W Ta 68W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs26mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds870pF @ 25V
- Current - Continuous Drain (Id) @ 25°C38A Tc
- Gate Charge (Qg) (Max) @ Vgs26nC @ 4.5V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±16V
- RoHS StatusNon-RoHS Compliant
IRL3303S Overview
A device's maximum input capacitance is 870pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
IRL3303S Features
a 30V drain to source voltage (Vdss)
IRL3303S Applications
There are a lot of Infineon Technologies
IRL3303S applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 870pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
IRL3303S Features
a 30V drain to source voltage (Vdss)
IRL3303S Applications
There are a lot of Infineon Technologies
IRL3303S applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRL3303S More Descriptions
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Trans MOSFET N-CH 30V 38A 3-Pin(2 Tab) D2PAK
30V 38A SINGLE N-CHANNEL GPP SMB 3.0A 200V ROHS 3KCAP CER 8PF 50V C0G/NP0 RADIAL
Trans MOSFET N-CH 30V 38A 3-Pin(2 Tab) D2PAK
30V 38A SINGLE N-CHANNEL GPP SMB 3.0A 200V ROHS 3K
The three parts on the right have similar specifications to IRL3303S.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusMountNumber of PinsMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCCurrent RatingElement ConfigurationPower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRadiation HardeningLead FreeNumber of ElementsView Compare
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IRL3303SSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABD2PAK-55°C~175°C TJTubeHEXFET®1997Obsolete1 (Unlimited)MOSFET (Metal Oxide)3.8W Ta 68W TcN-Channel26mOhm @ 20A, 10V1V @ 250μA870pF @ 25V38A Tc26nC @ 4.5V30V4.5V 10V±16VNon-RoHS Compliant------------------------- -
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABD2PAK-55°C~175°C TJTubeHEXFET®2004Obsolete1 (Unlimited)MOSFET (Metal Oxide)3.8W Ta 68W TcN-Channel26mOhm @ 20A, 10V1V @ 250μA870pF @ 25V38A Tc26nC @ 4.5V30V4.5V 10V±16VRoHS CompliantSurface Mount3175°C-55°C30V38ASingle68W7.4 ns200ns36 ns14 ns38A16V30V870pF40mOhm26 mΩ4.572mm10.668mm9.65mmNoLead Free-
-
Through HoleTO-220-3TO-220AB-55°C~150°C TJTubeHEXFET®2003Obsolete1 (Unlimited)MOSFET (Metal Oxide)140W TcN-Channel7mOhm @ 64A, 7V700mV @ 250μA4700pF @ 15V110A Tc110nC @ 4.5V20V4.5V 7V±10VRoHS CompliantThrough Hole3150°C-55°C20V110ASingle140W10 ns140ns130 ns96 ns110A10V20V4.7nF8mOhm7 mΩ---NoLead Free1
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABD2PAK-55°C~150°C TJTubeHEXFET®2003Obsolete1 (Unlimited)MOSFET (Metal Oxide)140W TcN-Channel7mOhm @ 64A, 7V700mV @ 250μA4700pF @ 15V110A Tc110nC @ 4.5V20V4.5V 7V±10VRoHS CompliantSurface Mount3150°C-55°C20V110ASingle140W10 ns140ns130 ns96 ns110A10V20V4.7nF7mOhm7 mΩ4.83mm10.67mm9.65mmNoLead Free-
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