Infineon Technologies IRL3103STRL

Name: IRL3103STRL
Brand: Infineon Technologies
SKU: 2853677-IRL3103STRL
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRL3103STRL

Manufacturer:: Infineon Technologies

Ventron No:: 2853677-IRL3103STRL

Description:: MOSFET N-CH 30V 64A D2PAK

ECAD Model:

Datasheet:: IRL3103STRL

Specifications

Infineon Technologies IRL3103STRL technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL3103STRL.

Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2001
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
AVALANCHE RATED
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
94W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
12m Ω @ 34A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1650pF @ 25V
Current - Continuous Drain (Id) @ 25°C
64A Tc
Gate Charge (Qg) (Max) @ Vgs
33nC @ 4.5V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±16V
Drain Current-Max (Abs) (ID)
64A
Drain-source On Resistance-Max
0.012Ohm
Pulsed Drain Current-Max (IDM)
220A
DS Breakdown Voltage-Min
30V
Avalanche Energy Rating (Eas)
130 mJ
RoHS Status
Non-RoHS Compliant

Description

IRL3103STRL Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 130 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1650pF @ 25V.A device's drain current is its maximum continuous current, and this device's drain current is 64A.A maximum pulsed drain current of 220A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 30V.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

IRL3103STRL Features
the avalanche energy rating (Eas) is 130 mJ
based on its rated peak drain current 220A.
a 30V drain to source voltage (Vdss)

IRL3103STRL Applications
There are a lot of Infineon Technologies
IRL3103STRL applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

IRL3103STRL More Descriptions

MOSFET, 30V, 64A, 12 mOhm, 22 nC Qg, Logic Level, D2-Pak
Trans MOSFET N-CH 30V 64A 3-Pin(2 Tab) D2PAK T/R
Power Field-Effect Transistor, 64A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3

Product Comparison

The three parts on the right have similar specifications to IRL3103STRL.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Mount

Number of Pins

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Current Rating

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Radiation Hardening

Lead Free

Recovery Time

Nominal Vgs

Height

Length

Width

REACH SVHC

View Compare
IRL3103STRL

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2001

e3

Obsolete

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

30

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

94W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

12m Ω @ 34A, 10V

1V @ 250μA

1650pF @ 25V

64A Tc

33nC @ 4.5V

30V

4.5V 10V

±16V

64A

0.012Ohm

220A

30V

130 mJ

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRL3502PBF

Infineon Technologies

Through Hole

TO-220-3

-

-

-55°C~150°C TJ

Tube

HEXFET®

2003

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

1

-

140W Tc

-

-

N-Channel

-

7mOhm @ 64A, 7V

700mV @ 250μA

4700pF @ 15V

110A Tc

110nC @ 4.5V

20V

4.5V 7V

±10V

-

-

-

-

-

RoHS Compliant

Through Hole

3

TO-220AB

150°C

-55°C

20V

110A

Single

140W

10 ns

140ns

130 ns

96 ns

110A

10V

20V

4.7nF

8mOhm

7 mΩ

No

Lead Free

-

-

-

-

-

-

IRL3103STRL vs IRL3502PBF
IRL3202PBF

Infineon Technologies

Through Hole

TO-220-3

-

-

-55°C~150°C TJ

Tube

HEXFET®

2004

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

69W Tc

-

-

N-Channel

-

16mOhm @ 29A, 7V

700mV @ 250μA

2000pF @ 15V

48A Tc

43nC @ 4.5V

20V

4.5V 7V

±10V

-

-

-

-

-

RoHS Compliant

Through Hole

3

TO-220AB

150°C

-55°C

20V

48A

Single

69W

8.5 ns

100ns

82 ns

12 ns

48A

10V

20V

2nF

19mOhm

16 mΩ

-

Lead Free

100 ns

700 mV

15.24mm

10.5156mm

4.69mm

No SVHC

IRL3103STRL vs IRL3202PBF
IRL3502SPBF

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~150°C TJ

Tube

HEXFET®

2003

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

140W Tc

-

-

N-Channel

-

7mOhm @ 64A, 7V

700mV @ 250μA

4700pF @ 15V

110A Tc

110nC @ 4.5V

20V

4.5V 7V

±10V

-

-

-

-

-

RoHS Compliant

Surface Mount

3

D2PAK

150°C

-55°C

20V

110A

Single

140W

10 ns

140ns

130 ns

96 ns

110A

10V

20V

4.7nF

7mOhm

7 mΩ

No

Lead Free

-

-

4.83mm

10.67mm

9.65mm

-

IRL3103STRL vs IRL3502SPBF

Certification

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MOSFET N-CH 20V 110A TO-220AB
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IRL3103STRL Specification

Part Number	Manufacturers	Description	Stock	Price
IRL3103STRLPBF DISTI #V36:1790_13892829	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 64A 3-Pin(2 Tab) D2PAK T/ RoHS: Compliant	2400	800 $0.5439
IRL3103STRLPBF DISTI #V72:2272_13892829	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 64A 3-Pin(2 Tab) D2PAK T/ RoHS: Compliant	0
IRL3103STRL DISTI #IRL3103STRL-ND	Infineon Technologies AG	MOSFET N-CH 30V 64A D2PAK RoHS: Not Compliant	0
IRL3103STRLPBF DISTI #IRL3103STRLPBF-ND	Infineon Technologies AG	MOSFET N-CH 30V 64A D2PAK RoHS: Compliant	0	3200 $0.53479
IRL3103STRLPBF DISTI #33608831	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 64A 3-Pin(2 Tab) D2PAK T/ RoHS: Compliant	2400	800 $0.5439
IRL3103STRLPBF DISTI #IRL3103STRLPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 64A 3-Pin(2 Tab) D2PAK T/R - RoHS: Compliant	0	3200 $0.4189 6400 $0.4039 9600 $0.3889 16000 $0.3759 32000 $0.3689
IRL3103STRLPBF DISTI #SP001552534	Infineon Technologies AG	Trans MOSFET N-CH 30V 64A 3-Pin(2 Tab) D2PAK T/R ( RoHS: Compliant	0	800 $0.5929 1600 $0.4849 3200 $0.4449 4800 $0.4099 8000 $0.3809
IRL3103STRLPBF DISTI #34AC1799	Infineon Technologies AG	MOSFET, N-CH, 30V, 64A, TO-263AB, Transistor Pola	2484	1 $1.2 10 $1.02 25 $0.944 50 $0.867 100 $0.791 250 $0.745 500 $0.699
IRL3103STRLPBF DISTI #70017473	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 30V, RDS(ON) 12 Mill RoHS: Compliant	0	3200 $2.29 6400 $2.244 16000 $2.176 32000 $2.084 80000 $1.947
IRL3103STRLPBF DISTI #942-IRL3103STRLPBF	Infineon Technologies AG	MOSFET 30V 1 N-CH HEXFET 12mOhms 22nC RoHS: Compliant	1706	1 $1.19 10 $1.01 100 $0.783 500 $0.692 800 $0.546
IRL3103STRL DISTI #	International Rectifier		1342	3 $2.1 11 $1.575 33 $1.3125 116 $0.7875 382 $0.735 1022 $0.693
IRL3103STRL DISTI #	International Rectifier	64 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFE	942	1 $2.8 307 $0.91 660 $0.875
IRL3103STRLPBF DISTI #	International Rectifier	64 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFE	364	1 $1.2 18 $0.6 84 $0.42
IRL3103STRLPBF DISTI #TMOS2246	Infineon Technologies AG	MOSFET 30V 64A D2PAK RoHS: Compliant	10400	800 $0.6156 1600 $0.5804 2400 $0.5452 3200 $0.4924 9600 $0.4749
IRL3103STRLPBF DISTI #2781150	Infineon Technologies AG	MOSFET, N-CH, 30V, 64A, TO-263AB RoHS: Compliant	2484	5 $1.8 25 $1.57 100 $1.28 250 $1.08 500 $0.929 1000 $0.88 5000 $0.835
IRL3103STRLPBF DISTI #2781150	Infineon Technologies AG	MOSFET, N-CH, 30V, 64A, TO-263AB	2864	1 $1.04 10 $0.827 100 $0.598 250 $0.508 500 $0.417

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Infineon Technologies IRL3103STRL

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