Infineon Technologies IRL3103S

Name: IRL3103S
Brand: Infineon Technologies
SKU: 3071545-IRL3103S
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRL3103S

Manufacturer:: Infineon Technologies

Ventron No:: 3071545-IRL3103S

Description:: MOSFET N-CH 30V 64A D2PAK

ECAD Model:

Datasheet:: IRL3103S

Specifications

Infineon Technologies IRL3103S technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL3103S.

Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2002
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Additional Feature
AVALANCHE RATED
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
225
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
94W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
12m Ω @ 34A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1650pF @ 25V
Current - Continuous Drain (Id) @ 25°C
64A Tc
Gate Charge (Qg) (Max) @ Vgs
33nC @ 4.5V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±16V
Drain Current-Max (Abs) (ID)
64A
Drain-source On Resistance-Max
0.012Ohm
Pulsed Drain Current-Max (IDM)
220A
DS Breakdown Voltage-Min
30V
Avalanche Energy Rating (Eas)
130 mJ
RoHS Status
Non-RoHS Compliant

Description

IRL3103S Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

IRL3103S Features Advanced Process Technology Surface Mount (IRL3103S) Low-profile through-hole (IRL3103L) 175??C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free

Product Comparison

The three parts on the right have similar specifications to IRL3103S.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Mount

Number of Pins

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Current Rating

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Height

Length

Width

Radiation Hardening

Lead Free

View Compare
IRL3103S

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

YES

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2002

e0

Obsolete

1 (Unlimited)

2

EAR99

Tin/Lead (Sn/Pb)

AVALANCHE RATED

MOSFET (Metal Oxide)

SINGLE

GULL WING

225

30

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

94W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

12m Ω @ 34A, 10V

1V @ 250μA

1650pF @ 25V

64A Tc

33nC @ 4.5V

30V

4.5V 10V

±16V

64A

0.012Ohm

220A

30V

130 mJ

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRL3502SPBF

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~150°C TJ

Tube

HEXFET®

2003

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

140W Tc

-

-

N-Channel

-

7mOhm @ 64A, 7V

700mV @ 250μA

4700pF @ 15V

110A Tc

110nC @ 4.5V

20V

4.5V 7V

±10V

-

-

-

-

-

RoHS Compliant

Surface Mount

3

D2PAK

150°C

-55°C

20V

110A

Single

140W

10 ns

140ns

130 ns

96 ns

110A

10V

20V

4.7nF

7mOhm

7 mΩ

4.83mm

10.67mm

9.65mm

No

Lead Free

IRL3103S vs IRL3502SPBF
IRL3303L

Infineon Technologies

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

-

-55°C~175°C TJ

Tube

HEXFET®

1997

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

3.8W Ta 68W Tc

-

-

N-Channel

-

26mOhm @ 20A, 10V

1V @ 250μA

870pF @ 25V

38A Tc

26nC @ 4.5V

30V

4.5V 10V

±16V

-

-

-

-

-

Non-RoHS Compliant

-

-

TO-262

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRL3103S vs IRL3303L
IRL3103L

Infineon Technologies

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

-

-55°C~175°C TJ

Tube

HEXFET®

2002

-

Obsolete

1 (Unlimited)

-

EAR99

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

94W Tc

-

-

N-Channel

-

12m Ω @ 34A, 10V

1V @ 250μA

1650pF @ 25V

64A Tc

33nC @ 4.5V

30V

4.5V 10V

±16V

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRL3103S vs IRL3103L