Infineon Technologies IRL3103D1S
- Part Number:
- IRL3103D1S
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2853681-IRL3103D1S
- Description:
- MOSFET N-CH 30V 64A D2PAK
- ECAD Model:
-
- Datasheet:
- IRL3103D1S
Infineon Technologies IRL3103D1S technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL3103D1S.
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesFETKY™
- Published1998
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max3.1W Ta 89W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs14m Ω @ 34A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1900pF @ 25V
- Current - Continuous Drain (Id) @ 25°C64A Tc
- Gate Charge (Qg) (Max) @ Vgs43nC @ 4.5V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±16V
- RoHS StatusNon-RoHS Compliant
IRL3103D1S Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1900pF @ 25V.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
IRL3103D1S Features
a 30V drain to source voltage (Vdss)
IRL3103D1S Applications
There are a lot of Infineon Technologies
IRL3103D1S applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1900pF @ 25V.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
IRL3103D1S Features
a 30V drain to source voltage (Vdss)
IRL3103D1S Applications
There are a lot of Infineon Technologies
IRL3103D1S applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
IRL3103D1S More Descriptions
30V FETKY - MOSFET and Schottky Diode in a D2-Pak package
MOSFET N-CH 30V 64A D2PAK
OEMs, CMs ONLY (NO BROKERS)
MOSFET N-CH 30V 64A D2PAK
OEMs, CMs ONLY (NO BROKERS)
The three parts on the right have similar specifications to IRL3103D1S.
-
ImagePart NumberManufacturerMounting TypePackage / CaseOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusMountNumber of PinsSupplier Device PackageMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCCurrent RatingElement ConfigurationPower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRadiation HardeningLead FreeSurface MountTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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IRL3103D1SSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-55°C~150°C TJTubeFETKY™1998Obsolete1 (Unlimited)MOSFET (Metal Oxide)3.1W Ta 89W TcN-Channel14m Ω @ 34A, 10V1V @ 250μA1900pF @ 25V64A Tc43nC @ 4.5V30V4.5V 10V±16VNon-RoHS Compliant------------------------------------------------ -
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-55°C~175°C TJTubeHEXFET®2004Obsolete1 (Unlimited)MOSFET (Metal Oxide)3.8W Ta 68W TcN-Channel26mOhm @ 20A, 10V1V @ 250μA870pF @ 25V38A Tc26nC @ 4.5V30V4.5V 10V±16VRoHS CompliantSurface Mount3D2PAK175°C-55°C30V38ASingle68W7.4 ns200ns36 ns14 ns38A16V30V870pF40mOhm26 mΩ4.572mm10.668mm9.65mmNoLead Free-----------------------
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-55°C~150°C TJTubeHEXFET®1998Obsolete1 (Unlimited)MOSFET (Metal Oxide)69W TcN-Channel16m Ω @ 29A, 7V700mV @ 250μA2000pF @ 15V48A Tc43nC @ 4.5V20V4.5V 7V±10VNon-RoHS Compliant------------------------YESSILICONe32EAR99MATTE TIN OVER NICKELFET General Purpose PowerSINGLEGULL WING26030R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING48A0.019Ohm190A20V270 mJ
-
Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA-55°C~175°C TJTubeHEXFET®1997Obsolete1 (Unlimited)MOSFET (Metal Oxide)3.8W Ta 68W TcN-Channel26mOhm @ 20A, 10V1V @ 250μA870pF @ 25V38A Tc26nC @ 4.5V30V4.5V 10V±16VNon-RoHS Compliant--TO-262--------------------------------------------
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