Infineon Technologies IRL3102S
- Part Number:
- IRL3102S
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3071594-IRL3102S
- Description:
- MOSFET N-CH 20V 61A D2PAK
- ECAD Model:
-
- Datasheet:
- IRL3102S
Infineon Technologies IRL3102S technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL3102S.
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHEXFET®
- Published1998
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max89W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs13m Ω @ 37A, 7V
- Vgs(th) (Max) @ Id700mV @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2500pF @ 15V
- Current - Continuous Drain (Id) @ 25°C61A Tc
- Gate Charge (Qg) (Max) @ Vgs58nC @ 4.5V
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 7V
- Vgs (Max)±10V
- RoHS StatusNon-RoHS Compliant
IRL3102S Description
These HEXFET Power MOSFETs were created with the requirement of CPU core DC-DC converters in mind. Advanced processing processes, along with an optimized gate oxide design, produce in a die that is scaled to provide optimal efficiency at the lowest possible cost. The D2Pak is a surface mount power package that can fit die up to HEX-4 in size. It has the highest power capabilities and the lowest onresistance of any surface mount package currently available. Because of its low internal connection resistance, the D2Pak is appropriate for high current applications and may dissipate up to 2.0W in a typical surface mount installation.
IRL3102S Features
Advanced Process Technology
Surface Mount
Optimized for 4.5V-7.0V Gate Drive
Ideal for CPU Core DC-DC Converters
Fast Switching
IRL3102S Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
These HEXFET Power MOSFETs were created with the requirement of CPU core DC-DC converters in mind. Advanced processing processes, along with an optimized gate oxide design, produce in a die that is scaled to provide optimal efficiency at the lowest possible cost. The D2Pak is a surface mount power package that can fit die up to HEX-4 in size. It has the highest power capabilities and the lowest onresistance of any surface mount package currently available. Because of its low internal connection resistance, the D2Pak is appropriate for high current applications and may dissipate up to 2.0W in a typical surface mount installation.
IRL3102S Features
Advanced Process Technology
Surface Mount
Optimized for 4.5V-7.0V Gate Drive
Ideal for CPU Core DC-DC Converters
Fast Switching
IRL3102S Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
IRL3102S More Descriptions
MOSFET, 20V, 61A, 15 mOhm, 38.7 nC Qg, Logic Level, D2-Pak
MOSFET N-CH 20V 61A D2PAK
OEMs, CMs ONLY (NO BROKERS)
MOSFET N-CH 20V 61A D2PAK
OEMs, CMs ONLY (NO BROKERS)
The three parts on the right have similar specifications to IRL3102S.
-
ImagePart NumberManufacturerMounting TypePackage / CaseOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeTechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusMountNumber of PinsSupplier Device PackageMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCCurrent RatingElement ConfigurationPower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceRecovery TimeDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCLead FreeRadiation HardeningView Compare
-
IRL3102SSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-55°C~150°C TJTubeHEXFET®1998Obsolete1 (Unlimited)EAR99MOSFET (Metal Oxide)89W TcN-Channel13m Ω @ 37A, 7V700mV @ 250μA2500pF @ 15V61A Tc58nC @ 4.5V20V4.5V 7V±10VNon-RoHS Compliant---------------------------- -
Through HoleTO-220-3-55°C~150°C TJTubeHEXFET®2004Obsolete1 (Unlimited)-MOSFET (Metal Oxide)69W TcN-Channel16mOhm @ 29A, 7V700mV @ 250μA2000pF @ 15V48A Tc43nC @ 4.5V20V4.5V 7V±10VRoHS CompliantThrough Hole3TO-220AB150°C-55°C20V48ASingle69W8.5 ns100ns82 ns12 ns48A10V20V2nF100 ns19mOhm16 mΩ700 mV15.24mm10.5156mm4.69mmNo SVHCLead Free-
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-55°C~150°C TJTubeHEXFET®2003Obsolete1 (Unlimited)-MOSFET (Metal Oxide)140W TcN-Channel7mOhm @ 64A, 7V700mV @ 250μA4700pF @ 15V110A Tc110nC @ 4.5V20V4.5V 7V±10VRoHS CompliantSurface Mount3D2PAK150°C-55°C20V110ASingle140W10 ns140ns130 ns96 ns110A10V20V4.7nF-7mOhm7 mΩ-4.83mm10.67mm9.65mm-Lead FreeNo
-
Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA-55°C~175°C TJTubeHEXFET®1997Obsolete1 (Unlimited)-MOSFET (Metal Oxide)3.8W Ta 68W TcN-Channel26mOhm @ 20A, 10V1V @ 250μA870pF @ 25V38A Tc26nC @ 4.5V30V4.5V 10V±16VNon-RoHS Compliant--TO-262------------------------
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