IRGPH40F

Infineon Technologies IRGPH40F

Part Number:
IRGPH40F
Manufacturer:
Infineon Technologies
Ventron No:
2496238-IRGPH40F
Description:
IGBT FAST 1200V 29A TO-247AC
ECAD Model:
Datasheet:
IRGPH40F

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Specifications
Infineon Technologies IRGPH40F technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRGPH40F.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Bulk
  • Published
    2017
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Input Type
    Standard
  • Power - Max
    160W
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Current - Collector (Ic) (Max)
    29A
  • Vce(on) (Max) @ Vge, Ic
    3.3V @ 15V, 17A
  • RoHS Status
    Non-RoHS Compliant
Description
IRGPH40F Description
IRGPH40F is an Insulated Gate Bipolar Transistor from the manufacturer of Infineon Technologies with a voltage of 1900V. The operating temperature of IRGPH40F is -55°C~150°C TJ and its maximum power dissipation are 160W. Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications.

IRGPH40F Features
The switching-loss rating includes all "tail" losses
Optimized for medium operating frequency

IRGPH40F Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
IRGPH40F More Descriptions
IGBT FAST 1200V 29A TO-247AC
French Electronic Distributor since 1988
Product Comparison
The three parts on the right have similar specifications to IRGPH40F.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Input Type
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Vce(on) (Max) @ Vge, Ic
    RoHS Status
    Mount
    Number of Pins
    ECCN Code
    Subcategory
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Element Configuration
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Test Condition
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    REACH SVHC
    Factory Lead Time
    Rise Time-Max
    Reverse Recovery Time
    Radiation Hardening
    Lead Free
    Height
    Length
    Width
    View Compare
  • IRGPH40F
    IRGPH40F
    Through Hole
    TO-247-3
    -55°C~150°C TJ
    Bulk
    2017
    Obsolete
    1 (Unlimited)
    Standard
    160W
    1200V
    29A
    3.3V @ 15V, 17A
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRGP4640-EPBF
    Through Hole
    TO-247-3
    -40°C~175°C TJ
    Tube
    2013
    Obsolete
    1 (Unlimited)
    Standard
    250W
    -
    -
    1.9V @ 15V, 24A
    RoHS Compliant
    Through Hole
    3
    EAR99
    Insulated Gate BIP Transistors
    250W
    NOT SPECIFIED
    NOT SPECIFIED
    IRGP4640
    Single
    N-CHANNEL
    1.9V
    65A
    600V
    1.6V
    400V, 24A, 10 Ω, 15V
    75nC
    72A
    40ns/105ns
    100μJ (on), 600μJ (off)
    20V
    6.5V
    40ns
    No SVHC
    -
    -
    -
    -
    -
    -
    -
    -
  • IRGP4262D-EPBF
    Through Hole
    TO-247-3
    -40°C~175°C TJ
    Tube
    2013
    Obsolete
    1 (Unlimited)
    Standard
    250W
    -
    -
    2.1V @ 15V, 24A
    RoHS Compliant
    Through Hole
    3
    EAR99
    Insulated Gate BIP Transistors
    250W
    -
    -
    -
    Single
    N-CHANNEL
    2.1V
    60A
    650V
    1.7V
    400V, 24A, 10 Ω, 15V
    70nC
    96A
    24ns/73ns
    520μJ (on), 240μJ (off)
    20V
    7.7V
    40ns
    No SVHC
    15 Weeks
    45ns
    170 ns
    No
    Lead Free
    -
    -
    -
  • IRGP4690DPBF
    Through Hole
    TO-247-3
    -55°C~175°C TJ
    Tube
    2007
    Obsolete
    1 (Unlimited)
    Standard
    454W
    -
    -
    2.1V @ 15V, 75A
    RoHS Compliant
    Through Hole
    3
    EAR99
    -
    454W
    NOT SPECIFIED
    NOT SPECIFIED
    -
    Single
    -
    2.1V
    140A
    600V
    1.7V
    400V, 75A, 10 Ω, 15V
    150nC
    225A
    50ns/200ns
    2.47mJ (on), 2.16mJ (off)
    -
    -
    -
    No SVHC
    -
    -
    155 ns
    -
    -
    20.7mm
    15.87mm
    5.31mm
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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