Infineon Technologies IRGP4266D-EPBF
- Part Number:
- IRGP4266D-EPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2497098-IRGP4266D-EPBF
- Description:
- IGBT 650V 140A 455W TO247AD
- Datasheet:
- IRGP4266D-EPBF
Infineon Technologies IRGP4266D-EPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRGP4266D-EPBF.
- Factory Lead Time15 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Weight6.500007g
- Operating Temperature-40°C~175°C TJ
- PackagingTube
- Published2010
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation455W
- Rise Time-Max90ns
- Element ConfigurationSingle
- Input TypeStandard
- Power - Max455W
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)2.1V
- Max Collector Current140A
- Reverse Recovery Time170 ns
- Collector Emitter Breakdown Voltage650V
- Collector Emitter Saturation Voltage1.7V
- Test Condition400V, 75A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 75A
- Gate Charge210nC
- Current - Collector Pulsed (Icm)300A
- Td (on/off) @ 25°C50ns/200ns
- Switching Energy2.5mJ (on), 2.2mJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max7.7V
- Fall Time-Max (tf)80ns
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
IRGP4266D-EPBF Description
IRGP4266D-EPBF transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRGP4266D-EPBF MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IRGP4266D-EPBF has the common source configuration.
IRGP4266D-EPBF Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
IRGP4266D-EPBF Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
IRGP4266D-EPBF More Descriptions
Insulated Gate Bipolar Transistor, 140A I(C), 650V V(BR)CES, N-Channel
IGBT Transistors 650V Lo VCEon Trench Co-Pack IGBT
Target Applications: AC-DC; Pump; Solar; UPS; Welding
TRANSISTOR, BIPOL, N CH, 650V, TO-247AD
IGBT Transistors 650V Lo VCEon Trench Co-Pack IGBT
Target Applications: AC-DC; Pump; Solar; UPS; Welding
TRANSISTOR, BIPOL, N CH, 650V, TO-247AD
The three parts on the right have similar specifications to IRGP4266D-EPBF.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeSubcategoryMax Power DissipationRise Time-MaxElement ConfigurationInput TypePower - MaxPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTest ConditionVce(on) (Max) @ Vge, IcGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxFall Time-Max (tf)REACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)View Compare
-
IRGP4266D-EPBF15 WeeksThrough HoleThrough HoleTO-247-336.500007g-40°C~175°C TJTube2010Obsolete1 (Unlimited)EAR99Insulated Gate BIP Transistors455W90nsSingleStandard455WN-CHANNEL2.1V140A170 ns650V1.7V400V, 75A, 10 Ω, 15V2.1V @ 15V, 75A210nC300A50ns/200ns2.5mJ (on), 2.2mJ (off)20V7.7V80nsNo SVHCNoRoHS CompliantLead Free----
-
--------2016Obsolete1 (Unlimited)------------------------RoHS Compliant----
-
15 WeeksThrough HoleThrough HoleTO-247-33--40°C~175°C TJTube2013Obsolete1 (Unlimited)EAR99Insulated Gate BIP Transistors250W45nsSingleStandard250WN-CHANNEL2.1V60A170 ns650V1.7V400V, 24A, 10 Ω, 15V2.1V @ 15V, 24A70nC96A24ns/73ns520μJ (on), 240μJ (off)20V7.7V40nsNo SVHCNoRoHS CompliantLead Free---
-
--Through HoleTO-247-3---40°C~175°C TJTube2016Obsolete1 (Unlimited)-----Standard325W---170ns--400V, 48A, 10Ohm, 15V2.1V @ 15V, 48A145nC192A70ns/140ns2.9mJ (on), 1.4mJ (off)-----RoHS Compliant-TO-247650V90A
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