IRGP4266D-EPBF

Infineon Technologies IRGP4266D-EPBF

Part Number:
IRGP4266D-EPBF
Manufacturer:
Infineon Technologies
Ventron No:
2497098-IRGP4266D-EPBF
Description:
IGBT 650V 140A 455W TO247AD
ECAD Model:
Datasheet:
IRGP4266D-EPBF

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Specifications
Infineon Technologies IRGP4266D-EPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRGP4266D-EPBF.
  • Factory Lead Time
    15 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Weight
    6.500007g
  • Operating Temperature
    -40°C~175°C TJ
  • Packaging
    Tube
  • Published
    2010
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    455W
  • Rise Time-Max
    90ns
  • Element Configuration
    Single
  • Input Type
    Standard
  • Power - Max
    455W
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    2.1V
  • Max Collector Current
    140A
  • Reverse Recovery Time
    170 ns
  • Collector Emitter Breakdown Voltage
    650V
  • Collector Emitter Saturation Voltage
    1.7V
  • Test Condition
    400V, 75A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.1V @ 15V, 75A
  • Gate Charge
    210nC
  • Current - Collector Pulsed (Icm)
    300A
  • Td (on/off) @ 25°C
    50ns/200ns
  • Switching Energy
    2.5mJ (on), 2.2mJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    7.7V
  • Fall Time-Max (tf)
    80ns
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
IRGP4266D-EPBF Description   IRGP4266D-EPBF transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRGP4266D-EPBF MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IRGP4266D-EPBF has the common source configuration.     IRGP4266D-EPBF Features   Gold metalization Excellent thermal stability Common source configuration Thermally enhanced packaging     IRGP4266D-EPBF Applications   ISM applications DC large signal applications Power factor correction Electronic lamp ballasts Flat panel display  
IRGP4266D-EPBF More Descriptions
Insulated Gate Bipolar Transistor, 140A I(C), 650V V(BR)CES, N-Channel
IGBT Transistors 650V Lo VCEon Trench Co-Pack IGBT
Target Applications: AC-DC; Pump; Solar; UPS; Welding
TRANSISTOR, BIPOL, N CH, 650V, TO-247AD
Product Comparison
The three parts on the right have similar specifications to IRGP4266D-EPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Subcategory
    Max Power Dissipation
    Rise Time-Max
    Element Configuration
    Input Type
    Power - Max
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    View Compare
  • IRGP4266D-EPBF
    IRGP4266D-EPBF
    15 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    6.500007g
    -40°C~175°C TJ
    Tube
    2010
    Obsolete
    1 (Unlimited)
    EAR99
    Insulated Gate BIP Transistors
    455W
    90ns
    Single
    Standard
    455W
    N-CHANNEL
    2.1V
    140A
    170 ns
    650V
    1.7V
    400V, 75A, 10 Ω, 15V
    2.1V @ 15V, 75A
    210nC
    300A
    50ns/200ns
    2.5mJ (on), 2.2mJ (off)
    20V
    7.7V
    80ns
    No SVHC
    No
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
  • IRGP4269DPBF
    -
    -
    -
    -
    -
    -
    -
    -
    2016
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    -
    -
    -
  • IRGP4262D-EPBF
    15 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    -
    -40°C~175°C TJ
    Tube
    2013
    Obsolete
    1 (Unlimited)
    EAR99
    Insulated Gate BIP Transistors
    250W
    45ns
    Single
    Standard
    250W
    N-CHANNEL
    2.1V
    60A
    170 ns
    650V
    1.7V
    400V, 24A, 10 Ω, 15V
    2.1V @ 15V, 24A
    70nC
    96A
    24ns/73ns
    520μJ (on), 240μJ (off)
    20V
    7.7V
    40ns
    No SVHC
    No
    RoHS Compliant
    Lead Free
    -
    -
    -
  • IRGP4263D1-EPBF
    -
    -
    Through Hole
    TO-247-3
    -
    -
    -40°C~175°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    Standard
    325W
    -
    -
    -
    170ns
    -
    -
    400V, 48A, 10Ohm, 15V
    2.1V @ 15V, 48A
    145nC
    192A
    70ns/140ns
    2.9mJ (on), 1.4mJ (off)
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    TO-247
    650V
    90A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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