Infineon Technologies IRGP4263PBF
- Part Number:
- IRGP4263PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2497101-IRGP4263PBF
- Description:
- IGBT 650V 90A 300W TO-247
- ECAD Model:
-
- Datasheet:
- IRGP4263(-E)PBF
Infineon Technologies IRGP4263PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRGP4263PBF.
- Factory Lead Time14 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Weight38.000013g
- Operating Temperature-40°C~175°C TJ
- PackagingTube
- Published2012
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation300W
- Rise Time-Max80ns
- Element ConfigurationSingle
- Input TypeStandard
- Power - Max300W
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)2.1V
- Max Collector Current90A
- Collector Emitter Breakdown Voltage650V
- Collector Emitter Saturation Voltage1.7V
- Test Condition400V, 48A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 48A
- Gate Charge150nC
- Current - Collector Pulsed (Icm)192A
- Td (on/off) @ 25°C70ns/140ns
- Switching Energy1.7mJ (on), 1mJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max7.7V
- Fall Time-Max (tf)50ns
- Height21.1mm
- Length16.13mm
- Width5.2mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
IRGP4263PBF Description
The IRGP4263PBF is an IGBT 650 V 90 A 300 W Through Hole TO-247AC. The BJT and MOSFET are combined to form the IGBT, or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low-voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.
IRGP4263PBF Features
VCES = 650V
IC = 60A, TC =100°C
tSC ≥ 5.5μs, TJ(max) = 175°C
VCE(ON) typ. = 1.7V @ IC = 48A
Low VCE(ON) and switching losses
Square RBSOA and maximum junction temperature 175°C
Positive VCE (ON) temperature coefficient
5.5μs short circuit SOA
Lead-free, RoHS compliant
IRGP4263PBF Applications
UPS
Welding
Industrial Motor Drive
Inverters
The IRGP4263PBF is an IGBT 650 V 90 A 300 W Through Hole TO-247AC. The BJT and MOSFET are combined to form the IGBT, or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low-voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.
IRGP4263PBF Features
VCES = 650V
IC = 60A, TC =100°C
tSC ≥ 5.5μs, TJ(max) = 175°C
VCE(ON) typ. = 1.7V @ IC = 48A
Low VCE(ON) and switching losses
Square RBSOA and maximum junction temperature 175°C
Positive VCE (ON) temperature coefficient
5.5μs short circuit SOA
Lead-free, RoHS compliant
IRGP4263PBF Applications
UPS
Welding
Industrial Motor Drive
Inverters
IRGP4263PBF More Descriptions
Trans IGBT Chip N-CH 650V 90A 3-Pin(3 Tab) TO-247AC Tube
Insulated Gate Bipolar Transistor, 90A I(C), 650V V(BR)CES, N-Channel
IGBT Transistors IR IGBT 650V 650V 48A TO-247AC
IGBT, SINGLE, 650V, 90A, TO-247AC
IGBT W/ULTRAFAST SOFT RECOVERY D
French Electronic Distributor since 1988
IGBT, SINGLE, 650V, 90A, TO-247AC; DC Collector Current: 90A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 300W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247AC; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Transistor Polarity: N Channel
Insulated Gate Bipolar Transistor, 90A I(C), 650V V(BR)CES, N-Channel
IGBT Transistors IR IGBT 650V 650V 48A TO-247AC
IGBT, SINGLE, 650V, 90A, TO-247AC
IGBT W/ULTRAFAST SOFT RECOVERY D
French Electronic Distributor since 1988
IGBT, SINGLE, 650V, 90A, TO-247AC; DC Collector Current: 90A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 300W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247AC; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Transistor Polarity: N Channel
The three parts on the right have similar specifications to IRGP4263PBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeSubcategoryMax Power DissipationRise Time-MaxElement ConfigurationInput TypePower - MaxPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTest ConditionVce(on) (Max) @ Vge, IcGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxFall Time-Max (tf)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Reverse Recovery TimeCurrent - Collector (Ic) (Max)Supplier Device PackageVoltage - Collector Emitter Breakdown (Max)View Compare
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IRGP4263PBF14 WeeksThrough HoleThrough HoleTO-247-3338.000013g-40°C~175°C TJTube2012Obsolete1 (Unlimited)EAR99Insulated Gate BIP Transistors300W80nsSingleStandard300WN-CHANNEL2.1V90A650V1.7V400V, 48A, 10 Ω, 15V2.1V @ 15V, 48A150nC192A70ns/140ns1.7mJ (on), 1mJ (off)20V7.7V50ns21.1mm16.13mm5.2mmNo SVHCNoRoHS CompliantLead Free------- -
-Through HoleThrough HoleTO-247-33--40°C~175°C TJTube2012Obsolete1 (Unlimited)EAR99-206W-SingleStandard--1.95V30A600V1.65V400V, 18A, 22 Ω, 15V1.95V @ 15V, 18A35nC54A40ns/105ns95μJ (on), 350μJ (off)------No SVHC-RoHS Compliant-NOT SPECIFIEDNOT SPECIFIED100 ns47A--
-
15 WeeksThrough HoleThrough HoleTO-247-33--40°C~175°C TJTube2013Obsolete1 (Unlimited)EAR99Insulated Gate BIP Transistors250W45nsSingleStandard250WN-CHANNEL2.1V60A650V1.7V400V, 24A, 10 Ω, 15V2.1V @ 15V, 24A70nC96A24ns/73ns520μJ (on), 240μJ (off)20V7.7V40ns---No SVHCNoRoHS CompliantLead Free--170 ns---
-
--Through HoleTO-247-3---40°C~175°C TJTube2016Obsolete1 (Unlimited)-----Standard325W-----400V, 48A, 10Ohm, 15V2.1V @ 15V, 48A145nC192A70ns/140ns2.9mJ (on), 1.4mJ (off)--------RoHS Compliant---170ns90ATO-247650V
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