IRGP4263D-EPBF

Infineon Technologies IRGP4263D-EPBF

Part Number:
IRGP4263D-EPBF
Manufacturer:
Infineon Technologies
Ventron No:
2497091-IRGP4263D-EPBF
Description:
IGBT 650V 90A 325W TO-247
ECAD Model:
Datasheet:
IRGP4263D(-E)PBF

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Specifications
Infineon Technologies IRGP4263D-EPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRGP4263D-EPBF.
  • Factory Lead Time
    15 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Operating Temperature
    -40°C~175°C TJ
  • Packaging
    Tube
  • Published
    2014
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    325W
  • Rise Time-Max
    80ns
  • Element Configuration
    Single
  • Input Type
    Standard
  • Power - Max
    325W
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    2.1V
  • Max Collector Current
    90A
  • Reverse Recovery Time
    170 ns
  • Collector Emitter Breakdown Voltage
    650V
  • Collector Emitter Saturation Voltage
    1.7V
  • Test Condition
    400V, 48A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.1V @ 15V, 48A
  • Gate Charge
    145nC
  • Current - Collector Pulsed (Icm)
    192A
  • Td (on/off) @ 25°C
    70ns/140ns
  • Switching Energy
    2.9mJ (on), 1.4mJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    7.7V
  • Fall Time-Max (tf)
    50ns
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
IRGP4263D-EPBF  Applications Industrial Motor Drive UPS Solar Inverters Welding
IRGP4263D-EPBF More Descriptions
Trans IGBT Chip N-CH 650V 90A 3-Pin(3 Tab) TO-247AD Tube
Insulated Gate Bipolar Transistor, 90A I(C), 650V V(BR)CES, N-Channel
IGBT W/ULTRAFAST SOFT RECOVERY D
TRANSISTOR, BIPOL, N CH, 650V, TO-247AD
Product Comparison
The three parts on the right have similar specifications to IRGP4263D-EPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Subcategory
    Max Power Dissipation
    Rise Time-Max
    Element Configuration
    Input Type
    Power - Max
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Current - Collector (Ic) (Max)
    Transistor Element Material
    Number of Terminations
    Qualification Status
    Number of Elements
    Case Connection
    Transistor Application
    JEDEC-95 Code
    Turn On Time
    Turn Off Time-Nom (toff)
    IGBT Type
    View Compare
  • IRGP4263D-EPBF
    IRGP4263D-EPBF
    15 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    -40°C~175°C TJ
    Tube
    2014
    Obsolete
    1 (Unlimited)
    EAR99
    Insulated Gate BIP Transistors
    325W
    80ns
    Single
    Standard
    325W
    N-CHANNEL
    2.1V
    90A
    170 ns
    650V
    1.7V
    400V, 48A, 10 Ω, 15V
    2.1V @ 15V, 48A
    145nC
    192A
    70ns/140ns
    2.9mJ (on), 1.4mJ (off)
    20V
    7.7V
    50ns
    No SVHC
    No
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRGP4640-EPBF
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    -40°C~175°C TJ
    Tube
    2013
    Obsolete
    1 (Unlimited)
    EAR99
    Insulated Gate BIP Transistors
    250W
    -
    Single
    Standard
    250W
    N-CHANNEL
    1.9V
    65A
    -
    600V
    1.6V
    400V, 24A, 10 Ω, 15V
    1.9V @ 15V, 24A
    75nC
    72A
    40ns/105ns
    100μJ (on), 600μJ (off)
    20V
    6.5V
    40ns
    No SVHC
    -
    RoHS Compliant
    -
    NOT SPECIFIED
    NOT SPECIFIED
    IRGP4640
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRGP4630DPBF
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    -40°C~175°C TJ
    Tube
    2012
    Obsolete
    1 (Unlimited)
    EAR99
    -
    206W
    -
    Single
    Standard
    -
    -
    1.95V
    30A
    100 ns
    600V
    1.65V
    400V, 18A, 22 Ω, 15V
    1.95V @ 15V, 18A
    35nC
    54A
    40ns/105ns
    95μJ (on), 350μJ (off)
    -
    -
    -
    No SVHC
    -
    RoHS Compliant
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    47A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRGP4069-EPBF
    14 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    -55°C~175°C TJ
    Tube
    2011
    Obsolete
    1 (Unlimited)
    EAR99
    Insulated Gate BIP Transistors
    268W
    42ns
    Single
    Standard
    268W
    N-CHANNEL
    1.85V
    76A
    -
    600V
    1.6V
    400V, 35A, 10 Ω, 15V
    1.85V @ 15V, 35A
    104nC
    105A
    46ns/105ns
    390μJ (on), 632μJ (off)
    20V
    6.5V
    54ns
    No SVHC
    -
    RoHS Compliant
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    SILICON
    3
    Not Qualified
    1
    COLLECTOR
    POWER CONTROL
    TO-247AD
    78 ns
    188 ns
    Trench
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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