Infineon Technologies IRGP4078D-EPBF
- Part Number:
- IRGP4078D-EPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2497090-IRGP4078D-EPBF
- Description:
- IGBT 600V 74A 278W TO247AD
- ECAD Model:
-
- Datasheet:
- IRGP4078D(-EP,PbF)
Infineon Technologies IRGP4078D-EPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRGP4078D-EPBF.
- Factory Lead Time15 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2013
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation278W
- Element ConfigurationSingle
- Power Dissipation278W
- Input TypeStandard
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)2.2V
- Max Collector Current74A
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage2.2V
- Test Condition400V, 50A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 50A
- IGBT TypeTrench
- Gate Charge92nC
- Current - Collector Pulsed (Icm)150A
- Td (on/off) @ 25°C-/116ns
- Switching Energy1.1mJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max6.5V
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
IRGP4078D-EPBF Description
Produced by Infineon Technologies is the IRGP4078D-EPBF. IGBT Transistors are its category. It is used in a variety of industries, such as communications equipment. Internet access via fixed lines Industrial Lighting Personal computers and notebooks Additionally, this component's primary specifications are: IGBT Transistors 600V IGBT w/ Ultra-Low VF. It is also environmentally friendly and RoHS compatible (Lead-free / RoHS Compliant).
IRGP4078D-EPBF Features
Square RBSOA
Low Switching Losses
5 μs short circuit SOA
Tight parameter distribution
Ultra-low VF Hyperfast Diode
100% of the parts tested for ILM?
Low VCE (ON) Trench IGBT Technology
Maximum Junction temperature 175°C
Positive VCE (ON) Temperature co-efficient
IRGP4078D-EPBF Applications
Industrial
Personal electronics
Communications equipment
Produced by Infineon Technologies is the IRGP4078D-EPBF. IGBT Transistors are its category. It is used in a variety of industries, such as communications equipment. Internet access via fixed lines Industrial Lighting Personal computers and notebooks Additionally, this component's primary specifications are: IGBT Transistors 600V IGBT w/ Ultra-Low VF. It is also environmentally friendly and RoHS compatible (Lead-free / RoHS Compliant).
IRGP4078D-EPBF Features
Square RBSOA
Low Switching Losses
5 μs short circuit SOA
Tight parameter distribution
Ultra-low VF Hyperfast Diode
100% of the parts tested for ILM?
Low VCE (ON) Trench IGBT Technology
Maximum Junction temperature 175°C
Positive VCE (ON) Temperature co-efficient
IRGP4078D-EPBF Applications
Industrial
Personal electronics
Communications equipment
IRGP4078D-EPBF More Descriptions
Target Applications: AC-DC; Induction Cooker; Pump; Solar; UPS; Welding
Trans IGBT Chip N-CH 600V 74A 3-Pin(3 Tab) TO-247AD Tube
Insulated Gate Bipolar Transistor, 74A I(C), 600V V(BR)CES, N-Channel
IGBT Transistors 600V IGBT w/ Ultra-Low VF
INSULATED GATE BIPOLAR GATE TRAS
Trans IGBT Chip N-CH 600V 74A 3-Pin(3 Tab) TO-247AD Tube
Insulated Gate Bipolar Transistor, 74A I(C), 600V V(BR)CES, N-Channel
IGBT Transistors 600V IGBT w/ Ultra-Low VF
INSULATED GATE BIPOLAR GATE TRAS
The three parts on the right have similar specifications to IRGP4078D-EPBF.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeSubcategoryMax Power DissipationElement ConfigurationPower DissipationInput TypePolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTest ConditionVce(on) (Max) @ Vge, IcIGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxRadiation HardeningRoHS StatusPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPower - MaxFall Time-Max (tf)REACH SVHCTransistor Element MaterialNumber of TerminationsQualification StatusNumber of ElementsRise Time-MaxCase ConnectionTransistor ApplicationJEDEC-95 CodeTurn On TimeTurn Off Time-Nom (toff)View Compare
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IRGP4078D-EPBF15 WeeksThrough HoleThrough HoleTO-247-33-55°C~175°C TJTube2013Obsolete1 (Unlimited)EAR99Insulated Gate BIP Transistors278WSingle278WStandardN-CHANNEL2.2V74A600V2.2V400V, 50A, 10 Ω, 15V2.2V @ 15V, 50ATrench92nC150A-/116ns1.1mJ (off)20V6.5VNoRoHS Compliant----------------- -
-Through HoleThrough HoleTO-247-33-40°C~175°C TJTube2013Obsolete1 (Unlimited)EAR99Insulated Gate BIP Transistors250WSingle-StandardN-CHANNEL1.9V65A600V1.6V400V, 24A, 10 Ω, 15V1.9V @ 15V, 24A-75nC72A40ns/105ns100μJ (on), 600μJ (off)20V6.5V-RoHS CompliantNOT SPECIFIEDNOT SPECIFIEDIRGP4640250W40nsNo SVHC----------
-
-------2016Obsolete1 (Unlimited)---------------------RoHS Compliant----------------
-
14 WeeksThrough HoleThrough HoleTO-247-33-55°C~175°C TJTube2011Obsolete1 (Unlimited)EAR99Insulated Gate BIP Transistors268WSingle-StandardN-CHANNEL1.85V76A600V1.6V400V, 35A, 10 Ω, 15V1.85V @ 15V, 35ATrench104nC105A46ns/105ns390μJ (on), 632μJ (off)20V6.5V-RoHS CompliantNOT SPECIFIEDNOT SPECIFIED-268W54nsNo SVHCSILICON3Not Qualified142nsCOLLECTORPOWER CONTROLTO-247AD78 ns188 ns
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