Infineon Technologies IRGP4069PBF
- Part Number:
- IRGP4069PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2497073-IRGP4069PBF
- Description:
- IGBT 600V 76A 268W TO247AC
- Datasheet:
- IRGP4069PbF/-EPbF
Infineon Technologies IRGP4069PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRGP4069PBF.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2004
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation268W
- Number of Elements1
- Rise Time-Max42ns
- Element ConfigurationSingle
- Power Dissipation268W
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Turn On Delay Time43 ns
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Turn-Off Delay Time127 ns
- Collector Emitter Voltage (VCEO)1.85V
- Max Collector Current76A
- JEDEC-95 CodeTO-247AC
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage1.6V
- Turn On Time78 ns
- Test Condition400V, 35A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic1.85V @ 15V, 35A
- Turn Off Time-Nom (toff)188 ns
- IGBT TypeTrench
- Gate Charge104nC
- Current - Collector Pulsed (Icm)105A
- Td (on/off) @ 25°C46ns/105ns
- Switching Energy390μJ (on), 632μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max6.5V
- Fall Time-Max (tf)54ns
- Height20.7mm
- Length15.87mm
- Width5.3086mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
IRGP4069PBF Description
IRGP4069PBF is a single IGBT from the manufacturer Infineon Technologies with a breakdown voltage of 600V. The operating temperature of IRGP4069PBF is -55°C~175°C TJ and its maximum power dissipation is 268W. IRGP4069PBF has 3 pins and it is available in Tube packaging way. The Collector-Emitter Breakdown Voltage of IRGP4069PBF is 600V and its Collector-Emitter Saturation Voltage is 1.6V.
IRGP4069PBF Features
Low VCE (ON) Trench IGBT Technology
Low Switching Losses
Maximum Junction Temperature 175 °C
5 μS short circuit SOA
Square RBSOA
100% of The Parts Tested for ILM
Positive VCE (ON) Temperature Coefficient
Tight Parameter Distribution
Lead Free Package
IRGP4069PBF Applications
High Efficiency in a Wide Range of Applications
Suitable for a Wide Range of Switching Frequencies due to
Low VCE (ON) and Low Switching Losses
Rugged Transient Performance for Increased Reliability
Excellent Current Sharing in Parallel Operation
IRGP4069PBF is a single IGBT from the manufacturer Infineon Technologies with a breakdown voltage of 600V. The operating temperature of IRGP4069PBF is -55°C~175°C TJ and its maximum power dissipation is 268W. IRGP4069PBF has 3 pins and it is available in Tube packaging way. The Collector-Emitter Breakdown Voltage of IRGP4069PBF is 600V and its Collector-Emitter Saturation Voltage is 1.6V.
IRGP4069PBF Features
Low VCE (ON) Trench IGBT Technology
Low Switching Losses
Maximum Junction Temperature 175 °C
5 μS short circuit SOA
Square RBSOA
100% of The Parts Tested for ILM
Positive VCE (ON) Temperature Coefficient
Tight Parameter Distribution
Lead Free Package
IRGP4069PBF Applications
High Efficiency in a Wide Range of Applications
Suitable for a Wide Range of Switching Frequencies due to
Low VCE (ON) and Low Switching Losses
Rugged Transient Performance for Increased Reliability
Excellent Current Sharing in Parallel Operation
IRGP4069PBF More Descriptions
Trans IGBT Chip N-CH 600V 76A 3-Pin(3 Tab) TO-247AC
Insulated Gate Bipolar Transistor, 76A I(C), 600V V(BR)CES, N-Channel, TO-247AC
600V Low VCEon Trench IGBT in a TO-247 package
TUBE / 600V 76.000A TO-247 ;ROHS COMPLIANT: YES
MOSFET; 600V; 76.000A; TO-247 | Infineon IRGP4069PBF
IGBT,N CH,600V,76A,TO-247AC; Transistor Type:IGBT; DC Collector Current:76A; Collector Emitter Voltage Vces:1.6V; Power Dissipation Pd:368W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:268W
Insulated Gate Bipolar Transistor, 76A I(C), 600V V(BR)CES, N-Channel, TO-247AC
600V Low VCEon Trench IGBT in a TO-247 package
TUBE / 600V 76.000A TO-247 ;ROHS COMPLIANT: YES
MOSFET; 600V; 76.000A; TO-247 | Infineon IRGP4069PBF
IGBT,N CH,600V,76A,TO-247AC; Transistor Type:IGBT; DC Collector Current:76A; Collector Emitter Voltage Vces:1.6V; Power Dissipation Pd:368W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:268W
The three parts on the right have similar specifications to IRGP4069PBF.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryMax Power DissipationNumber of ElementsRise Time-MaxElement ConfigurationPower DissipationCase ConnectionInput TypeTurn On Delay TimeTransistor ApplicationPolarity/Channel TypeTurn-Off Delay TimeCollector Emitter Voltage (VCEO)Max Collector CurrentJEDEC-95 CodeCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxFall Time-Max (tf)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusFactory Lead TimePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Qualification StatusPower - MaxSupplier Device PackageReverse Recovery TimeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)View Compare
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IRGP4069PBFThrough HoleThrough HoleTO-247-33SILICON-55°C~175°C TJTube2004Obsolete1 (Unlimited)3EAR99Insulated Gate BIP Transistors268W142nsSingle268WCOLLECTORStandard43 nsPOWER CONTROLN-CHANNEL127 ns1.85V76ATO-247AC600V1.6V78 ns400V, 35A, 10 Ω, 15V1.85V @ 15V, 35A188 nsTrench104nC105A46ns/105ns390μJ (on), 632μJ (off)20V6.5V54ns20.7mm15.87mm5.3086mmNo SVHCNoRoHS Compliant----------
-
-------2016Obsolete1 (Unlimited)------------------------------------RoHS Compliant---------
-
Through HoleThrough HoleTO-247-33SILICON-55°C~175°C TJTube2011Obsolete1 (Unlimited)3EAR99Insulated Gate BIP Transistors268W142nsSingle-COLLECTORStandard-POWER CONTROLN-CHANNEL-1.85V76ATO-247AD600V1.6V78 ns400V, 35A, 10 Ω, 15V1.85V @ 15V, 35A188 nsTrench104nC105A46ns/105ns390μJ (on), 632μJ (off)20V6.5V54ns---No SVHC-RoHS Compliant14 WeeksNOT SPECIFIEDNOT SPECIFIEDNot Qualified268W----
-
-Through HoleTO-247-3---40°C~175°C TJTube2016Obsolete1 (Unlimited)---------Standard----------400V, 48A, 10Ohm, 15V2.1V @ 15V, 48A--145nC192A70ns/140ns2.9mJ (on), 1.4mJ (off)--------RoHS Compliant----325WTO-247170ns650V90A
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