IRGP4069PBF

Infineon Technologies IRGP4069PBF

Part Number:
IRGP4069PBF
Manufacturer:
Infineon Technologies
Ventron No:
2497073-IRGP4069PBF
Description:
IGBT 600V 76A 268W TO247AC
ECAD Model:
Datasheet:
IRGP4069PbF/-EPbF

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Specifications
Infineon Technologies IRGP4069PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRGP4069PBF.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2004
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    268W
  • Number of Elements
    1
  • Rise Time-Max
    42ns
  • Element Configuration
    Single
  • Power Dissipation
    268W
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Turn On Delay Time
    43 ns
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Turn-Off Delay Time
    127 ns
  • Collector Emitter Voltage (VCEO)
    1.85V
  • Max Collector Current
    76A
  • JEDEC-95 Code
    TO-247AC
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    1.6V
  • Turn On Time
    78 ns
  • Test Condition
    400V, 35A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    1.85V @ 15V, 35A
  • Turn Off Time-Nom (toff)
    188 ns
  • IGBT Type
    Trench
  • Gate Charge
    104nC
  • Current - Collector Pulsed (Icm)
    105A
  • Td (on/off) @ 25°C
    46ns/105ns
  • Switching Energy
    390μJ (on), 632μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • Fall Time-Max (tf)
    54ns
  • Height
    20.7mm
  • Length
    15.87mm
  • Width
    5.3086mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
Description
IRGP4069PBF Description
IRGP4069PBF is a single IGBT from the manufacturer Infineon Technologies with a breakdown voltage of 600V. The operating temperature of IRGP4069PBF is -55°C~175°C TJ and its maximum power dissipation is 268W. IRGP4069PBF has 3 pins and it is available in Tube packaging way. The Collector-Emitter Breakdown Voltage of IRGP4069PBF is 600V and its Collector-Emitter Saturation Voltage is 1.6V.

IRGP4069PBF Features
Low VCE (ON) Trench IGBT Technology
Low Switching Losses
Maximum Junction Temperature 175 °C
5 μS short circuit SOA
Square RBSOA
100% of The Parts Tested for ILM
Positive VCE (ON) Temperature Coefficient
Tight Parameter Distribution
Lead Free Package

IRGP4069PBF Applications
High Efficiency in a Wide Range of Applications
Suitable for a Wide Range of Switching Frequencies due to
Low VCE (ON) and Low Switching Losses
Rugged Transient Performance for Increased Reliability
Excellent Current Sharing in Parallel Operation
IRGP4069PBF More Descriptions
Trans IGBT Chip N-CH 600V 76A 3-Pin(3 Tab) TO-247AC
Insulated Gate Bipolar Transistor, 76A I(C), 600V V(BR)CES, N-Channel, TO-247AC
600V Low VCEon Trench IGBT in a TO-247 package
TUBE / 600V 76.000A TO-247 ;ROHS COMPLIANT: YES
MOSFET; 600V; 76.000A; TO-247 | Infineon IRGP4069PBF
IGBT,N CH,600V,76A,TO-247AC; Transistor Type:IGBT; DC Collector Current:76A; Collector Emitter Voltage Vces:1.6V; Power Dissipation Pd:368W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:268W
Product Comparison
The three parts on the right have similar specifications to IRGP4069PBF.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Max Power Dissipation
    Number of Elements
    Rise Time-Max
    Element Configuration
    Power Dissipation
    Case Connection
    Input Type
    Turn On Delay Time
    Transistor Application
    Polarity/Channel Type
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Factory Lead Time
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Power - Max
    Supplier Device Package
    Reverse Recovery Time
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    View Compare
  • IRGP4069PBF
    IRGP4069PBF
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~175°C TJ
    Tube
    2004
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Insulated Gate BIP Transistors
    268W
    1
    42ns
    Single
    268W
    COLLECTOR
    Standard
    43 ns
    POWER CONTROL
    N-CHANNEL
    127 ns
    1.85V
    76A
    TO-247AC
    600V
    1.6V
    78 ns
    400V, 35A, 10 Ω, 15V
    1.85V @ 15V, 35A
    188 ns
    Trench
    104nC
    105A
    46ns/105ns
    390μJ (on), 632μJ (off)
    20V
    6.5V
    54ns
    20.7mm
    15.87mm
    5.3086mm
    No SVHC
    No
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRGP4269DPBF
    -
    -
    -
    -
    -
    -
    -
    2016
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRGP4069-EPBF
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~175°C TJ
    Tube
    2011
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Insulated Gate BIP Transistors
    268W
    1
    42ns
    Single
    -
    COLLECTOR
    Standard
    -
    POWER CONTROL
    N-CHANNEL
    -
    1.85V
    76A
    TO-247AD
    600V
    1.6V
    78 ns
    400V, 35A, 10 Ω, 15V
    1.85V @ 15V, 35A
    188 ns
    Trench
    104nC
    105A
    46ns/105ns
    390μJ (on), 632μJ (off)
    20V
    6.5V
    54ns
    -
    -
    -
    No SVHC
    -
    RoHS Compliant
    14 Weeks
    NOT SPECIFIED
    NOT SPECIFIED
    Not Qualified
    268W
    -
    -
    -
    -
  • IRGP4263D1-EPBF
    -
    Through Hole
    TO-247-3
    -
    -
    -40°C~175°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Standard
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    400V, 48A, 10Ohm, 15V
    2.1V @ 15V, 48A
    -
    -
    145nC
    192A
    70ns/140ns
    2.9mJ (on), 1.4mJ (off)
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    -
    -
    -
    325W
    TO-247
    170ns
    650V
    90A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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