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IRGP4063DPBF

Infineon Technologies IRGP4063DPBF

Part Number:
IRGP4063DPBF
Manufacturer:
Infineon Technologies
Ventron No:
2494711-IRGP4063DPBF
Description:
IGBT 600V 96A 330W TO247AC
ECAD Model:
Datasheet:
IRGP4063D(-E)PbF

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Specifications
Infineon Technologies IRGP4063DPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRGP4063DPBF.
  • Factory Lead Time
    26 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Weight
    38.000013g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2006
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Insulated Gate BIP Transistors
  • Voltage - Rated DC
    300V
  • Max Power Dissipation
    330W
  • Current Rating
    96A
  • Base Part Number
    IRGP4063D
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    330W
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Turn On Delay Time
    60 ns
  • Transistor Application
    POWER CONTROL
  • Rise Time
    56ns
  • Drain to Source Voltage (Vdss)
    300V
  • Polarity/Channel Type
    N-CHANNEL
  • Turn-Off Delay Time
    145 ns
  • Collector Emitter Voltage (VCEO)
    2.14V
  • Max Collector Current
    96A
  • Reverse Recovery Time
    115 ns
  • Continuous Drain Current (ID)
    96A
  • JEDEC-95 Code
    TO-247AC
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    2.14V
  • Turn On Time
    100 ns
  • Test Condition
    400V, 48A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.14V @ 15V, 48A
  • Turn Off Time-Nom (toff)
    210 ns
  • IGBT Type
    Trench
  • Gate Charge
    95nC
  • Current - Collector Pulsed (Icm)
    144A
  • Td (on/off) @ 25°C
    60ns/145ns
  • Switching Energy
    625μJ (on), 1.28mJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • Fall Time-Max (tf)
    46ns
  • Height
    20.3mm
  • Length
    15.875mm
  • Width
    5.3mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRGP4063DPBF Description
IRGP4063DPBF is an insulated gate bipolar transistor with an ultrafast soft recovery diode, manufactured by Infineon Technologies.

IRGP4063DPBF Features
Square RBSOA
Lead-Free Package
Low switching losses
5 μS short circuit SOA
Tight parameter distribution
Ultra-fast soft Recovery Co-Pak Diode
Low VCE (ON) Trench IGBT Technology
Maximum Junction temperature 175 °C
Positive VCE (ON) Temperature co-efficient
100% of the parts tested for 4X rated current (ILM)

IRGP4063DPBF Application
Power control

IRGP4063DPBF More Descriptions
600V UltraFast Copack Trench IGBT in a TO-247AC package for apliance motion applications
Trans IGBT Chip N-CH 600V 96A 330000mW 3-Pin(3 Tab) TO-247AC Tube
IRGP4063DPbF Series 600 V 48 A N-Channel UltraFast IGBT - TO-247AC
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.14 V Current release time: 35 ns Power dissipation: 330 W
Transistor; Transistor Type:IGBT; Transistor Polarity:N Channel; Collector Emitter Voltage, Vces:600V; Continuous Collector Current, Ic:96A; Collector Emitter Saturation Voltage, Vce(sat):2.14V; Power Dissipation, Pd:330W ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to IRGP4063DPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Current Rating
    Base Part Number
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Input Type
    Turn On Delay Time
    Transistor Application
    Rise Time
    Drain to Source Voltage (Vdss)
    Polarity/Channel Type
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Current - Collector (Ic) (Max)
    Qualification Status
    Rise Time-Max
    Power - Max
    View Compare
  • IRGP4063DPBF
    IRGP4063DPBF
    Infineon Technologies
    26 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    38.000013g
    SILICON
    -55°C~175°C TJ
    Tube
    2006
    Active
    1 (Unlimited)
    3
    EAR99
    Insulated Gate BIP Transistors
    300V
    330W
    96A
    IRGP4063D
    1
    Single
    330W
    COLLECTOR
    Standard
    60 ns
    POWER CONTROL
    56ns
    300V
    N-CHANNEL
    145 ns
    2.14V
    96A
    115 ns
    96A
    TO-247AC
    600V
    2.14V
    100 ns
    400V, 48A, 10 Ω, 15V
    2.14V @ 15V, 48A
    210 ns
    Trench
    95nC
    144A
    60ns/145ns
    625μJ (on), 1.28mJ (off)
    20V
    6.5V
    46ns
    20.3mm
    15.875mm
    5.3mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
  • IRGP4630DPBF
    IRGP4630DPBF
    Infineon Technologies
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    -
    -
    -40°C~175°C TJ
    Tube
    2012
    Obsolete
    1 (Unlimited)
    -
    EAR99
    -
    -
    206W
    -
    -
    -
    Single
    -
    -
    Standard
    -
    -
    -
    -
    -
    -
    1.95V
    30A
    100 ns
    -
    -
    600V
    1.65V
    -
    400V, 18A, 22 Ω, 15V
    1.95V @ 15V, 18A
    -
    -
    35nC
    54A
    40ns/105ns
    95μJ (on), 350μJ (off)
    -
    -
    -
    -
    -
    -
    No SVHC
    -
    RoHS Compliant
    -
    NOT SPECIFIED
    NOT SPECIFIED
    47A
    -
    -
    -
    IRGP4063DPBF vs IRGP4630DPBF
  • IRGP4069-EPBF
    IRGP4069-EPBF
    Infineon Technologies
    14 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    -
    SILICON
    -55°C~175°C TJ
    Tube
    2011
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Insulated Gate BIP Transistors
    -
    268W
    -
    -
    1
    Single
    -
    COLLECTOR
    Standard
    -
    POWER CONTROL
    -
    -
    N-CHANNEL
    -
    1.85V
    76A
    -
    -
    TO-247AD
    600V
    1.6V
    78 ns
    400V, 35A, 10 Ω, 15V
    1.85V @ 15V, 35A
    188 ns
    Trench
    104nC
    105A
    46ns/105ns
    390μJ (on), 632μJ (off)
    20V
    6.5V
    54ns
    -
    -
    -
    No SVHC
    -
    RoHS Compliant
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    Not Qualified
    42ns
    268W
    IRGP4063DPBF vs IRGP4069-EPBF
  • IRGP4690DPBF
    IRGP4690DPBF
    Infineon Technologies
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    -
    -
    -55°C~175°C TJ
    Tube
    2007
    Obsolete
    1 (Unlimited)
    -
    EAR99
    -
    -
    454W
    -
    -
    -
    Single
    -
    -
    Standard
    -
    -
    -
    -
    -
    -
    2.1V
    140A
    155 ns
    -
    -
    600V
    1.7V
    -
    400V, 75A, 10 Ω, 15V
    2.1V @ 15V, 75A
    -
    -
    150nC
    225A
    50ns/200ns
    2.47mJ (on), 2.16mJ (off)
    -
    -
    -
    20.7mm
    15.87mm
    5.31mm
    No SVHC
    -
    RoHS Compliant
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    454W
    IRGP4063DPBF vs IRGP4690DPBF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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